The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs).

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives

The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).

The EPC9126 development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC2016C 100V maximum device voltage capable of current pulses up to 75 A.

The EPC9126HC development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC2001C 100V maximum device voltage capable of current pulses up to 150 A.

The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effect transistor (FET).

The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with GaN FETs.