EPC9001C: 15A @ 0 ~ 40V, Half H-Bridge

Summary

The EPC9001C development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2015 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9001C development board is 2” x 1.5” and contains two EPC2015 eGaN FETs in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Specifications

Manufacturer EPC
Category Power Management
Sub-Category Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number 917-1135-ND
Eval Board Supplier EPC
Eval Board Board not Stocked
Configuration 1 Half H-Bridge
Voltage Out Range 0 ~ 40 V
Current Out 15 A
Interface PWM, Dual
Features Internal Bootstrap Circuit
Shoot Through Protection
Under Voltage Protection (UVP)
Switching Frequency (Max) Not given
Component Count + Extras 29 + 10
Design Author EPC
Main I.C. Base Part EPC2015C
Date Created By Author 2014-01
Date Added To Library 2023-11

Support Documents & Media

EPC9001C - User Guide EPC2015C - Datasheet

Media

EPC9001C - Schematic EPC9001C - Board EPC9001C - Block Diagram EPC9001C - Board Connections EPC9001C - Chart 1