Auxiliary Gate Drive Transformer

WE-AGDT

The WE-AGDT series from Würth Elektronik allows implementing discrete SiC gate driver designs easier than ever before. These standard parts are compact SMT transformers optimized for silicon carbide applications. With extremely low interwinding capacitance, the WE-AGDT helps to achieve higher Common Mode Transient Immunity (CMTI). The series is compliant with safety standards according to IEC62368-1 / IEC61558-2-16 in addition to AEC-Q200 qualification. Reference designs are available for each WE-AGDT transformer. The complete solution is compact and capable of fully automated assembly.

Impact of Interwinding Capacitance in typical Applications

Safety Standards and Qualifications

Reference Design

Isolated Auxiliary Power Supply with PSR Flyback topology

Highly compact solution with regulated bipolar output rails upto 6 W power for high-performance SiC and IGBT gate driver applications.

SiC Gate Driver System - Example Application: 3-phase SiC Motor Driver

SiC Gate Driver Schematic

Applications

Reference Designs for each WE-AGDT Transformer

List of users
Order Code VIN range (V) VOUT1 (V) VOUT2 (V) CWW (pF) Frequency max* (kHz) IC Reference design Power (W)
750317893 9 – 18 15 – 20 6.8 350 LM5180 3
750317894 9 – 18 15 -4 7.0 350 LM5180 3
750318207 18 – 36 15 – 20 8.2 350 LM5180 5
750318208 18 – 36 15 -4 7.0 350 LM5180 5
750318114 9 – 18 15 – 20 6.8 350 LT8302 6
750318131 9 – 18 15 -4 7.5 350 LT8302 6

* Frequency varies with the output load and input voltage