N-Channel TrenchFET® Gen III Power MOSFETs

• Low conduction and switching losses enable increased efficiency and reduced power consumption
  
  • Record-breaking maximum on-resistance at V_GS = 4.5 V rating is up to 32% - Down to 0.002 Ω
  • Maximum on-resistance at V_GS = 10 V is also up to 23% lower - Down to 0.00155 Ω
  • Figure of Merit (FOM) of on-resistance times gate charge up to 42% lower - Down to 87 mΩ-nC
• 20 V, 25 V, and 30 V options, all with 20 V V_GS
• Package options in SO-8 footprint area include:
  
  • Thermally advanced PowerPAK SO-8
  • Standard SO-8
  • PolarPAK® with double-sided cooling

Circuit Applications

• Synchronous Rectification
• Synchronous Buck Converter
  • Low-Side MOSFET
• OR-ing

Product Applications

• VRM
• POL
• Servers
• Fixed Telecom
• Power Supplies