Datenblatt für SB01-15C von onsemi

Ordering number: ENAOdO7A 0N fielnllmmiuctm'0 ‘5 7m 005 \
71112 TKIM/42506SB MSIM TB-00000475 No.A0407-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
SB01-15C
Schottky Barrier Diode
150V, 0.1A, Low IR, Single CP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
• Package : CP
• JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB
•
Minimum Packing Quantity
: 3,000 pcs./reel
Packing Type: TB Marking
Electrical Connection
1 : Anode
2 : No Contact
3 : Cathode
CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
TB F
LOT No.
LOT No.
SB01-15C-TB-E
3
12
Applications
• High frequency rectifi cation (switching regulators, converters, choppers)
Features
• Low forward voltage (VF max=0.75V) • Fast reverse recovery time (trr max=10ns)
• Low switching noise
• Low leakage current and high reliability due to highly reliable planar structure
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 150 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 155 V
Average Output Current IO100 mA
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 5 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Package Dimensions
unit : mm (typ)
7013A-004
Ordering number : ENA0407A
100nm 100nm ‘ F Io H J 0°J'L 0°J'L I _f'\_ a 1 (I? (A \\ \ Mi 77* 1w \ ‘ JUL :1 “L
SB01-15C
No.A0407-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Reverse Voltage VRIR=200μA 150 V
Forward Voltage VFIF=100mA 0.75 V
Reverse Current IRVR=75V 50 μA
Interterminal Capacitance C VR=10V, f=1MHz 7 pF
Reverse Recovery Time trr IF=IR=100mA, See specifi ed Test Circuit. 10 ns
Thermal Resistance
Rth(j-a)1 420 °C / W
Rth(j-a)2 Mounted in Cu-foiled area of 16mm2×0.2mm
on glass epoxy board 330 °C / W
trr Test Circuit
Ordering Information
Duty≤10%
50Ω100Ω10Ω
--5V
trr
10μs
100mA100mA
10mA
(3)
1.0
2
1.0
3
7
5
2
10
3
5
22357 23 357
10 100
ID00277
C -- VR
00.4 0.8 1.2 1.6 2.0 2.4
ID00274
IF -- VF
Ta=125
°
C
25
°
C
025 50 75 100 125 150 175
ID00275
IR -- VR
10
5
7
2
3
3
5
5
7
7
2
100
1000
0.1
1.0
5
2
5
2
10
100
1000
5
5
2
2
0 20 40 60 80 100 120
ID00276
PF(AV) -- IO
0
20
40
60
80
100
120
(2)
(4)
(1)
f=1MHz
100
°
C
50
°
C
75
°
C
Ta=125
°
C
Forward Voltage, VF -- V
Forward Current, IF -- mA
Reverse Voltage, VR -- V
Reverse Current, IR -- μA
Average Output Current, IO -- mA
Average Forward Power Dissipation, PF(AV) -- mW
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
(1)Rectangular wave θ=60
°
(2)Rectangular wave θ=120
°
(3)Rectangular wave θ=180
°
(4)Sine wave θ=180
°
180°
360°
θ
360°
Rectangular
wave
Sine wave
25°C
é
SB01-15C
NoA0407-3/6
70.01 23 7
0.1
052 2337
1.0
5
6
7
4
2
5
3
1
IT00278
IFSM -- t
IS
20ms
t
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
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SB01-15C
No.A0407-4/6
Embossed Taping Specifi cation
SB01-15C-TB-E
wté‘ Him a fl ; Q4 5 E , :5 a u m m mm h 3 Va :1 ,, Ea;
SB01-15C
NoA0407-5/6
Outline Drawing Land Pattern Example
SB01-15C-TB-E
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.950.95
1.0
2.4
0.8
SB01-15C
PS No.A0407-6/6
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
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SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
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