Datenblatt für 2N6426, 2N6427 von onsemi

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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3 1Publication Order Number:
2N6426/D
2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 40 Vdc
Collector − Base Voltage VCBO 40 Vdc
Emitter − Base Voltage VEBO 12 Vdc
Collector Current − Continuous IC500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
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COLLECTOR 3
BASE
2
EMITTER 1
MARKING DIAGRAM
2N
642x
AYWW G
G
x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
2N6426, 2N6427
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(IC = 10 mAdc, VBE = 0) V(BR)CEO 40 − − Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 40 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 12 − − Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0) ICES − − 1.0 mAdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0) ICBO − − 50 nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0) IEBO − − 50 nAdc
ON CHARACTERISTICS
DC Current Gain, (Note 1)
(IC = 10 mAdc, VCE = 5.0 Vdc) 2N6426
2N6427
(IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426
2N6427
(IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426
2N6427
hFE 20,000
10,000
30,000
20,000
20,000
14,000
−
−
−
−
−
−
200,000
100,000
300,000
200,000
200,000
140,000
−
Collector−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc
VCE(sat) −
−0.71
0.9 1.2
1.5
Vdc
Base−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc) VBE(sat) − 1.52 2.0 Vdc
Base−Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc) VBE(on) − 1.24 1.75 Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 5.4 7.0 pF
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 15 pF
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426
2N6427
hie 100
50 −
−2000
1000
kW
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426
2N6427
hfe 20,000
10,000 −
−−
−
−
Current−Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2N6426
2N6427
|hfe|1.5
1.3 2.4
2.4 −
−
−
Output Admittance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hoe − − 1000 mmhos
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) NF − 3.0 10 dB
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
BANDW‘DTH : 1.0 Hz
2N6426, 2N6427
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3
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
5%) TO 125%? 5‘0 TO t25°C @ Ic/IE : “mu
2N6426, 2N6427
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4
SMALL−SIGNALCHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25°C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL−SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k 7.0 10 20 30 50 70 100 200 300 500
TJ = 125°C
25°C
−55°C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25°C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
−1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
TJ = 25°C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
−2.0
−3.0
−4.0
−5.0
−6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25°C TO 125°C
−55°C TO 25°C
*RqVC FOR VCE(sat)
qVB FOR VBE
25°C TO 125°C
−55°C TO 25°C
*APPLIES FOR IC/IB ≤ hFE/3.0
2N6426, 2N6427
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5
Figure 12. Thermal Response
t, TIME (ms)
1.0
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0k
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)
1.0 ms
100 ms
TC = 25°C
1.0 s
Design Note: Use of Transient
Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE +t1f +t1
tP
PEAK PULSE POWER = PP
ORDERING INFORMATION
Device Package Shipping†
2N6426G TO−92
(Pb−Free) 5,000 Units / Bulk
2N6426RLRAG TO−92
(Pb−Free) 2,000 / Tape & Ammo
2N6427G TO−92
(Pb−Free) 5,000 Units / Bulk
2N6427RLRAG TO−92
(Pb−Free) 2,000 / Tape & Ammo
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Dfi w? W@ W@ iflfla @ in,“me 22?; E, {Afi
2N6426, 2N6427
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6
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 −−−
N2.04 2.66
P1.50 4.00
R2.93 −−−
V3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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