Datenblatt für PBSS4230T von Nexperia USA Inc.

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DATA SHEET
Product data sheet 2003 Sep 29
DISCRETE SEMICONDUCTORS
PBSS4230T
30 V, 2 A
NPN low VCEsat (BISS) transistor
M3D08
8
2003 Sep 29 2
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
FEATURES
•Low collector-emitter saturation voltage VCEsat
•High collector current capability IC and ICM
•High efficiency leading to less heat generation
•Reduced printed-circuit board requirements
•Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
•Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
•Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low VCEsat and RCEsat parameters.
PNP complement: PBSS5230T.
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE(1)
PBSS4230T *3D
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 30 V
ICcollector current (DC) 2 A
ICM peak collector current 3 A
RCEsat equivalent on-resistance 200 mΩ
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PBSS4230T −plastic surface mounted package; 3 leads SOT23
2003 Sep 29 3
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −40 V
VCEO collector-emitter voltage open base −30 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −2 A
ICM peak collector current −3 A
IBM peak base current −300 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW
Tamb ≤ 25 °C; note 2 −480 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
2003 Sep 29 4
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 30 V; IE = 0 −−100 nA
VCB = 30 V; IE = 0; Tj = 150 °C−−50 μA
IEBO emitter-base cut-off current VEB = 4 V; IC = 0 −−100 nA
hFE DC current gain VCE = 2 V; IC = 100 mA 350 470 −
VCE = 2 V; IC = 500 mA 300 450 −
VCE = 2 V; IC = 1 A 300 420 −
VCE = 2 V; IC = 2 A 150 250 −
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA −45 70 mV
IC = 500 mA; IB = 50 mA −70 100 mV
IC = 750 mA; IB = 15 mA −120 180 mV
IC = 1 A; IB = 50 mA; note 1 −130 180 mV
IC = 2 A; IB = 200 mA; note 1 −240 320 mV
RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 −140 200 mΩ
VBEsat base-emitter saturation voltage IC = 2 A; IB = 200 mA; note 1 −−1.1 V
VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA −−0.75 V
fTtransition frequency IC = 100 mA; VCE = 10 V;
f = 100 MHz
100 230 −MHz
Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz −15 20 pF
DIMENSIONS (mm are me orIgInal dImeNSInnS) AI UNIT A m“ hr, I: D E e 5‘ NE Ln 0 v w H 045 ms in 14 25 045 n55 mm 09 n‘ 035 nos 25 12 ‘9 095 21 015 M5 02 0‘ OUTLINE REFERENCES Eu VERS'O" IEI: JEDEC EIAJ PR TOVZSSAB E} @ E E2 28 SoTza 2003 Sep 29
2003 Sep 29 5
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Sep 29 6
NXP Semiconductors Product data sheet
30 V, 2 A
NPN low VCEsat (BISS) transistor PBSS4230T
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands R75/01/pp7 Date of release: 2003 Sep 29 Document order number: 9397 750 11898