Datenblatt für PBSS4140DPN von Nexperia USA Inc.

nexpefla http://www.nxD.com http://www.DhiliDs.com/ httD://www.semiconductors.philips.com/ htt : www.nex eria.com salesaddressesQneer com
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DATA SHEET
Product data sheet 2001 Dec 13
DISCRETE SEMICONDUCTORS
PBSS4140DPN
40 V low VCEsat NPN/PNP
transistor
db
ook, halfpage
M3D302
DESCRIPTION NPN/PNP iow chsal transistor pair in an 8674 (SOT457) plastic package. MARKING TVPE NUMBER MARKING CODE PBSSAMODPN M2 2001 Dec 13 Top View
2001 Dec 13 2
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
FEATURES
•600 mW total power dissipation
•Low collector-emitter saturation voltage
•High current capability
•Improved device reliability due to reduced heat
generation
•Replaces two SOT23 packaged low VCEsat transistors
on same PCB area
•Reduces required PCB area
•Reduced pick and place costs.
APPLICATIONS
•General purpose switching and muting
•LCD backlighting
•Supply line switching circuits
•Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457)
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140DPN M2
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
MAM445
132
TR1
TR2
64
5
Top view
123
654
Fig.1 Simplified outline SC74 (SOT457) and
symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 40 V
ICpeak collector current 1 A
ICM peak collector current 2 A
TR1 NPN − −
TR2 PNP − −
RCEsat equivalent on-resistance <500 mΩ
2001 Dec 13 3
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter −40 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −1 A
ICM peak collector current −2 A
IBM peak base current −1 A
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −370 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −600 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient
in free air; note 1 208 K/W
2001 Dec 13 4
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO collector-base cut-off current VCB = 40 V; IE = 0 −−100 nA
VCB = 40 V; IE = 0; Tj = 150 °C−−50 μA
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 −−100 nA
IEBO emitter-base cut-off current VEB = 5 V; IC = 0 −−100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 300 − −
VCEsat collector-emitter saturation
voltage
IC = 100 mA; IB = 1 mA −−200 mV
IC = 500 mA; IB = 50 mA −−250 mV
IC = 1 A; IB = 100 mA −−500 mV
NPN transistor
hFE DC current gain VCE = 5 V; IC = 500 mA 300 −900
VCE = 5 V; IC = 1 A 200 − −
VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA −−1.2 V
VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A −−1.1 V
RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 −260 <500 mΩ
fTtransition frequency VCE =10 V; IC = 50 mA; f = 100 MHz 150 −−MHz
Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz −−10 pF
PNP transistor
hFE DC current gain VCE = −5 V; IC = −100 mA 300 −800
VCE = −5 V; IC = −500 mA 250 − −
VCE = −5 V; IC = −1 A 160 − −
VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA −−−1.1 V
VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A −−−1.0 V
RCEsat equivalent on-resistance IC = −500 mA; IB −50 mA; note 1 −300 <500 mΩ
fTtransition frequency VCE = −10 V; IC = −50 mA;
f = 100 MHz
150 −−MHz
Cccollector capacitance VCB = −10 V; IE = Ie = 0; f =1 MHz −−12 pF
103 VCEsaI (NV) mi 10 m1 (Npm; Mn: 10 {1) Tm=15mc {2) Tm = 25 QC (3) Tmpss’c Fig.4 CoHectorreminer saturatwon voltage as a function oi coHector current; typwca‘ values. 2001 Dec 13 5
2001 Dec 13 5
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
handbook, halfpage
0
1000
200
400
600
800
MLD642
10−11
(1)
10 IC (mA)
hFE
102103104
(3)
(2)
Fig.2 DC current gain as a function of collector
current; typical values.
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
10
1
10−111010
2103104
10−1
IC (mA)
VBE
(V)
(1)
(3)
(2)
MLD635
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
1
MLD636
11010
2
IC (mA)
VCEsat
(mV)
103104
(3)
(2)
(1)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
10
1
10−1
102MHC126
10−1110
RCEsat
(Ω)
IC (mA)
103
102104
(1)
(2)
(3)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2001 Dec 13 6
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
handbook, halfpage
0 200
fT
(MHz)
IC (mA)
1000
400
300
100
0
200
400 600 800
MLD637
Fig.6 Transition frequency as a function of
collector current; typical values.
TR1 (NPN); VCE = 10 V.
40: VCEsal (NV) 402 40 ,m 7th 403 710‘ 'c (M) “121mm; won“ :10 (1) Tm=15mc (2) Tm = 25 QC {3) Tmpss’c Fig.9 CoHectorreminer saturatwon voltage as a function oi coHector current; typwca‘ values. 2001 Dec 13 7
2001 Dec 13 7
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
handbook, halfpage
MLD638
0
1200
400
800
10−1−1−10 IC (mA)
hFE
−102−103−104
(1)
(3)
(2)
Fig.7 DC current gain as a function of collector
current; typical values.
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
−10
−1
−10−1−1−10 −102−103−104
−10−1
IC (mA)
VBE
(V)
(1)
(3)
(2)
MLD639
Fig.8 Base-emitter voltage as a function of
collector current; typical values.
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
−103
−102
−10
−1
MLD640
−1−10 −102
IC (mA)
VCEsat
(mV)
−103−104
(2)
(1)
(3)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
10
1
10−1
102MHC127
−10−1−1−10
RCEsat
(Ω)
IC (mA)
−103
−102−104
(1)
(2)
(3)
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
TR2 (PNP); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2001 Dec 13 8
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
handbook, halfpage
0
300
200
100
0
−200
−
1000−400 −600 −800
MLD641
IC (mA)
fT
(MHz)
Fig.11 Transition frequency as a function of
collector current; typical values.
TR2 (PNP); VCE = -10 V.
REFERENCES OUTLINE EuRo VERSION .Ec JEDEC El“ PROJE SOT457 50774 a @ 2001 Dec 15 9
2001 Dec 13 9
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT457 SC-74
wBM
bp
D
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT45
7
UNIT A1bpcDEHELpQywv
mm 0.1
0.013 0.40
0.25 3.1
2.7
0.26
0.10 1.7
1.3
e
0.95 3.0
2.5 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2 0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
2001 Dec 13 10
NXP Semiconductors Product data sheet
40 V low VCEsat NPN/PNP transistor PBSS4140DPN
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
founded by PHILIPS
NXP Semiconductors
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp11 Date of release: 2001 Dec 13 Document order number: 9397 750 09062