Datenblatt für APT50M38JFLL von Microchip Technology

ADVANCED A POWER TECHNOLOGY®
050-7030 Rev D 4-2004
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
APT50M38JFLL
500V 88A 0.038ΩΩ
ΩΩ
Ω
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
GS
S
D
ISOTOP
®
"UL Recognized"
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular SOT-227 Package
•FAST RECOVERY BODY DIODE
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 44A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
500
0.038
250
1000
±100
35
APT50M38JFLL
500
88
352
±30
±40
694
5.56
-55 to 150
300
88
50
3600
050-7030 Rev D 4-2004
DYNAMIC CHARACTERISTICS APT50M38JFLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -88A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -88A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -88A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -88A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
88
352
1.3
15
Tj = 25°C 300
Tj = 125°C 600
Tj = 25°C 2.2
Tj = 125°C 9.0
Tj = 25°C 16
Tj = 125°C 33
Symbol
RθJC
RθJA
MIN TYP MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.93mH, RG = 25Ω, Peak IL = 88A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 500 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 250V
ID = 88A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 88A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 333V, VGS = 15V
ID = 88A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 333V VGS = 15V
ID = 88A, RG = 3Ω
MIN TYP MAX
12000
2540
125
270
70
140
17
22
50
4
1295
940
1875
1165
UNIT
pF
nC
ns
µJ
050-7030 Rev D 4-2004
APT50M38JFLL
Typical Performance Curves
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
0 5 10 15 20 25 30
0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 160 180
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
300
250
200
150
100
50
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
15 &10V
7.5V
6V
5.5V
6.5V
7V
8V
VGS=10V
VGS=20V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.0244
0.133
0.0218
0.0731F
0.701F
20.1F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
NORMALIZED TO
VGS = 10V @ 45.5A
ID = 45.5A
VGS = 10V
250
200
150
100
50
0
90
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS‘ DRAWN-TOSOURCE VOLTAGE Nous)
050-7030 Rev D 4-2004
APT50M38JFLL
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 500 0 10 20 30 40 50
0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5
352
100
10
1
16
12
8
4
0
40,000
10,000
1,000
100
10
400
100
10
1
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
ID = 91A
TJ
=+150°C
TJ
=+25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100µS
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 333V
RG = 5Ω
TJ = 125°C
L = 100µH
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
20 40 60 80 100 120 140 20 40 60 80 100 120 140
20 40 60 80 100 120 140 0 5 10 15 20
VDD = 333V
ID = 88A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
VDD = 333V
RG = 5Ω
TJ = 125°C
L = 100µH
VDD = 333V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
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050-7030 Rev D 4-2004
APT50M38JFLL
Typical Performance Curves
Figure 19, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage TJ125°C
Switching Energy
5%
10%
td(on)
5%
10%
90%
tr
Switching Energy Drain Current
Drain Voltage
Gate Voltage
TJ125°C
10% 0
td(off)
90%
90%
tf
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP®
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
I
C
D.U.T.
APT60DF60
V
CE
Fi
g
ure 20
,
Inductive Switchin
g
Test Circuit
V
DD
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