Datenblatt für SQJ463EP von Vishay Siliconix

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SQJ463EP
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S11-2288-Rev. D, 28-Nov-11 1Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• AEC-Q101 Qualifiedd
•100 % R
g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V) - 40
RDS(on) (Ω) at VGS = - 10 V 0.010
RDS(on) (Ω) at VGS = - 4.5 V 0.015
ID (A) - 30
Configuration Single
S
G
D
P-Channel MOSFET
4
6.15 mm
PowerPAK
®
SO-8L Single
5.13 mm
3
2
1
G
S
S
S
D
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ463EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain CurrentaTC = 25 °C ID
- 30
A
TC = 125 °C - 30
Continuous Source Current (Diode Conduction)aIS- 30
Pulsed Drain CurrentbIDM - 120
Single Pulse Avalanche Current L = 0.1 mH IAS - 44
Single Pulse Avalanche Energy EAS 97 mJ
Maximum Power DissipationbTC = 25 °C PD
83 W
TC = 125 °C 28
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature)e, f 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB MountcRthJA 65 °C/W
Junction-to-Case (Drain) RthJC 1.8
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S11-2288-Rev. D, 28-Nov-11 2Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 40 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = - 40 V - - - 1
μA VGS = 0 V VDS = - 40 V, TJ = 125 °C - - - 50
VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 150
On-State Drain Currenta I
D(on) V
GS = - 10 V VDS ≤ - 5 V - 30 - - A
Drain-Source On-State Resistancea R
DS(on)
VGS = - 10 V ID = - 18 A - 0.008 0.010
Ω
VGS = - 4.5 V ID = - 15 A - 0.012 0.015
VGS = - 10 V ID = - 18 A; TJ = 125 °C - 0.013 0.015
VGS = - 10 V ID = - 18 A; TJ = 175 °C - 0.015 0.018
Forward Transconductancebgfs VDS = - 15 V, ID = - 18 A - 45 - S
Dynamicb
Input Capacitance Ciss
VGS = 0 V VDS = - 20 V, f = 1 MHz
- 4700 5875
pF Output Capacitance Coss - 630 790
Reverse Transfer Capacitance Crss - 460 575
Total Gate ChargecQg
VGS = - 10 V VDS = - 20 V, ID = - 18.6 A
- 98 150
nC Gate-Source ChargecQgs -14-
Gate-Drain ChargecQgd -23-
Gate Resistance Rgf = 1 MHz 1.4 2.3 3.2 Ω
Turn-On Delay Timectd(on)
VDD = - 20 V, RL = 20 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
-2132
ns
Rise Timectr -1726
Turn-Off Delay Timectd(off) - 121 182
Fall Timectf -5177
Source-Drain Diode Ratings and Characteristicsb
Pulsed CurrentaISM - - - 120 A
Forward Voltage VSD IF = - 4.5 A, VGS = 0 - - 0.8 - 1.2 V
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S11-2288-Rev. D, 28-Nov-11 3Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
0246810
VGS =10Vthru5V
VGS =4V
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS = 3 V
0
15
30
45
60
75
0 102030405060
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
C
rss
0
1000
2000
3000
4000
5000
6000
7000
010203040
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
10
20
30
40
50
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.01
0.02
0.03
0.04
0.05
0 102030405060
VGS =4.5V
VGS =10V
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
0
2
4
6
8
10
0 102030405060708090100
ID
= 18.6 A
V
DS
=20V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
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SQJ463EP
www.vishay.com Vishay Siliconix
S11-2288-Rev. D, 28-Nov-11 4Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150 175
ID= 18.6 A
VGS =10V
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0246810
T
J
= 25 °C
T
J
= 150 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
- 0.4
- 0.1
0.2
0.5
0.8
1.1
- 50 - 25 0 25 50 75 100 125 150 175
ID= 250 µA
ID=1mA
Variance (V)VGS(th)
TJ- Temperature (°C)
- 54
- 50 - 25 25 75 1250 50 100 175150
- 52
- 48
- 50
- 46
- 44
- 42
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
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SQJ463EP
www.vishay.com Vishay Siliconix
S11-2288-Rev. D, 28-Nov-11 5Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
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www.vishay.com Vishay Siliconix
S11-2288-Rev. D, 28-Nov-11 6Document Number: 65540
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65540.
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
The rmal Impedance
Single Pulse
0.02
0.05
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Package Information
www.vishay.com Vishay Siliconix
Revision: 16-May-16 1Document Number: 69003
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® SO-8L Case Outline
for Non-Al Parts
b2
Backside view (dual)
b4b3
bb1 e
D
D1
E
E1
L1
Top side view
A1
W
L1
L
0.25 gauge line
θ
W3
W2
W1
E2
E2
D2
b3 b4
Backside view (single)
A
C
W3
W2
W1
K
D2
D3D3
F
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Package Information
www.vishay.com Vishay Siliconix
Revision: 16-May-16 2Document Number: 69003
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 3.18 3.28 3.38 0.125 0.129 0.133
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
0° - 10° 0° - 10°
ECN: T16-0221-Rev. D, 16-May-16
DWG: 5976
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PAD Pattern
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Revision: 07-Feb-12 1Document Number: 63818
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RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
Recommended Minimum Pads
Dimensions in mm (inches)
5.000
(0.197)
2.310
(0.091)
0.510
(0.020)
0.595
(0.023)
4.061
(0.160)
3.630
(0.143)
0.410
(0.016)
0.710
(0.028)
0.610
(0.024)
2.715
(0.107)
1.270
(0.050)
1.905
(0.075)
0.860
(0.034)
0.820
(0.032)
7.250
(0.285)
8.250
(0.325)
6.250
(0.246)
1.291
(0.051)
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Revision: 08-Feb-17 1Document Number: 91000
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