Datenblatt für FDMC6679AZ von onsemi

©2009 Semiconductor Components Industries, LLC.
October-2017, Rev.4
Publication Order Number:
FDMC6679AZ/D
1
FDMC6679AZ P-Channel PowerTrench® MOSFET
FDMC6679AZ
P-Channel PowerTrench® MOSFET
-30 V, -20 A, 10 mΩ
Features
Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
General Description
The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) and ESD protection.
Applications
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Bottom
D
D
D
D
S
S
SG
Top
Pin 1 4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous TC = 25 °C -20
A-Continuous TA = 25 °C (Note 1a) -11.5
-Pulsed -32
PDPower Dissipation TC = 25 °C 41 W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 3.0 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC6679AZ FDMC6679AZ MLP 3.3x3.3 13 ’’ 12 mm 3000 units
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FDMC6679AZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = -250 μA, referenced to 25 °C 29 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -24 V, -1 μA
VGS = 0 V, TJ = 125 °C -100
IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 μA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1-1.8-3V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250 μA, referenced to 25 °C -7 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -10 V, ID = -11.5 A 8.6 10
mΩVGS = -4.5 V, ID = -8.5 A 12 18
VGS = -10 V, ID = -11.5 A, TJ = 125 °C 12 15
gFS Forward Transconductance VDS = -5 V, ID = -11.5 A 46 S
Ciss Input Capacitance VDS = -15 V, VGS = 0 V,
f = 1 MHz
2985 3970 pF
Coss Output Capacitance 570 755 pF
Crss Reverse Transfer Capacitance 500 750 pF
td(on) Turn-On Delay Time
VDD = -15 V, ID = -11.5 A,
VGS = -10 V, RGEN = 6 Ω
12 21 ns
trRise Time 14 25 ns
td(off) Turn-Off Delay Time 63 100 ns
tfFall Time 46 73 ns
QgTotal Gate Charge VGS = 0 V to -10 V
VDD = -15 V,
ID = -11.5 A
65 91 nC
QgTotal Gate Charge VGS = 0 V to -5 V 37 52 nC
Qgs Gate to Source Charge 8.7 nC
Qgd Gate to Drain “Miller” Charge 17 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -11.5 A (Note 2) 0.83 1.30 V
VGS = 0 V, IS = -1.6 A (Note 2) 0.71 1.20
trr Reverse Recovery Time IF = -11.5 A, di/dt = 100 A/μs 31 49 ns
Qrr Reverse Recovery Charge 16 28 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper b.125 °C/W when mounted on
a minimum pad of 2 oz copper
PULSE DURATION : an u PULSE DURATION : an PULSE DURATION : an PULSE DURATION : an
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FDMC6679AZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0123
0
8
16
24
32
VGS = -3 V
VGS = -6 V
VGS = -10 V
VGS = -4.5 V
VGS = -4 V
VGS = -3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 8 16 24 32
1
2
3
4
VGS = -3 V
VGS = -3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4 V VGS = -4.5 V
VGS = -6 V VGS = -10 V
N ormali ze d O n - Re s i s tan c e
vs. Drain Current and Gate Voltage
Figur e 3. No rma li ze d On Res is tance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -11.5 A
VGS = -10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs. Junction Temperature Figure 4.
246810
0
10
20
30
40
50
TJ = 125 oC
ID = -11.5 A
TJ = 25 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n- Re si st an ce vs . Ga t e to
Source Voltage
Figure 5. Transfer Characteristics
1234
0
8
16
24
32
TJ = 150 oC
VDS = -5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
40
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou rc e t o D ra in Di o de
Forward Voltage vs. Source Current
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4
FDMC6679AZ P-Channel PowerTrench® MOSFET
Figure 7.
0 10203040506070
0
2
4
6
8
10
ID = -11.5 A
VDD = -20 V
VDD = -10 V
-VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = -15 V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
C a p a c i t a n c e v s . D r a i n
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
-IAS, AVALANCHE CURRENT (A)
50
U n c l a m p e d I n d u c t i v e
Switching Capability Figure 10.
25 50 75 100 125 150
0
10
20
30
40
50
60
VGS = -4.5 V
Limited by Package
RθJC = 3.0 oC/W
VGS = -10 V
-ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
M a x i m u m C o n t i n u o u s D r ai n
Current vs. Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
DC
10 s
1 s
100 ms
10 ms
1 ms
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
Figure 12.
0 5 10 15 20 25 30 35
10-8
10-7
10-6
10-5
10-4
10-3
10-2
VGS = 0 V
TJ = 25 oC
TJ = 125 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
-Ig, GATE LEAKAGE CURRENT (A)
Igss vs. Vgss
Typical Characteristics TJ = 25 °C unless otherwise noted
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5
FDMC6679AZ P-Channel PowerTrench® MOSFET
Figure 13.
Single Pulse Maximum Power Dissipation
Figure 14.
10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
RθJA = 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
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6
FDMC6679AZ P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
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