Datenblatt für IRLL024NPbF von Infineon Technologies

(ifineon Form Quantity STG Thermal Resistance
IRLL024NTRPbF
VDSS 55V
RDS(on) 0.065
ID 3.1A
Description
Fifth Generation HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor
phase, infra red, or wave soldering techniques. Its unique
package design allows for easy automatic pick-and-place as with
other SOT or SOIC packages but has the added advantage of
improved thermal performance due to an enlarged tab for heat
sinking. Power dissipation of 1.0W is possible in a typical surface
mount application.
1 2019-01-28
G D S
Gate Drain Source
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
SOT-223
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
IRLL024NTRPbF SOT-223 Tape and Reel 2500 IRLL024NTRPbF
Symbol Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V **4.4
A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V *3.1
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V *2.5
IDM Pulsed Drain Current 12
PD @TA = 25°C Maximum Power Dissipation (PCB Mount) **2.1 W
PD @TA = 25°C Maximum Power Dissipation (PCB Mount) *1.0
Linear Derating Factor (PCB Mount) *8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 120 mJ
IAR Avalanche Current 3.1 A
EAR Repetitive Avalanche Energy *0.1 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Absolute Maximum Ratings
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJA Junction-to-Ambient (PCB Mount, steady state) *90 120
RJA Junction-to-Ambient (PCB Mount, steady state) **50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
D5 = 25V, In VDs Gs VDS = 44V,V55
IRLL024NTRPbF
2 2019-01-28
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
starting TJ = 25°C, L = 25mH, RG = 25, IAS = 3.1A (See fig. 12)
I
SD 1.9A, di/dt 270A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.048 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance
––– ––– 0.065 VGS = 10V, ID = 3.1A
––– ––– 0.080 VGS = 5.0V, ID = 2.5A
––– ––– 0.100 VGS = 4.0V, ID = 1.6A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 3.3 ––– ––– S VDS = 25V, ID = 1.9A
IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 55 V, VGS = 0V
––– ––– 250 VDS = 44V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– 10.4 15.6
nC
ID = 1.9A
Qgs Gate-to-Source Charge ––– 1.5 2.3 VDS = 44V
Qgd Gate-to-Drain Charge ––– 5.5 8.3 VGS = 5.0V , See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.4 –––
ns
VDD = 28V
tr Rise Time ––– 21 ––– ID = 1.9A
td(off) Turn-Off Delay Time ––– 18 ––– RG= 24
tf Fall Time ––– 25 ––– RD= 15See Fig. 10
Ciss Input Capacitance ––– 510 –––
pF
VGS = 0V
Coss Output Capacitance ––– 140 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 58 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 3.1
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 12 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C,IS = 1.9A,VGS = 0V 
trr Reverse Recovery Time ––– 39 58 ns TJ = 25°C ,IF = 1.9A
Qrr Reverse Recovery Charge ––– 63 94 nC di/dt = 100A/µs 

(Imneon, 2W5 PULS 20w PULS T C T C 1 | v | // z // / // / // ,/ II V v T , ( c
IRLL024NTRPbF
3 2019-01-28
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
1
10
100
2 4 6 8 10 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
3.1A
(Imneon, FOR TEST CTRCUT T‘ON IN TH YR
IRLL024NTRPbF
4 2019-01-28
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1 10 100
0
200
400
600
800
1000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 4 8 12 16 20
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.9A
V = 11V
DS
V = 27V
DS
V = 44V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.1 1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
,Vm Mon) ‘r Mom ff SINGLE PULSE
IRLL024NTRPbF
5 2019-01-28
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
(Inflneon, Charge 4» Starling T ( C Currem Regulator
IRLL024NTRPbF
6 2019-01-28
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.4A
2.5A
3.1A
(Imneon, w UE \ H EEEVVH LEV‘U [1 = ’5 4 F ZR ‘ l‘] 4 \ [JESVE l T; 77 ‘5“ ME ‘ z 5‘ , 4 L [] ‘Y LU ‘5‘ \H I] EI‘E‘ mLerLVH ‘ mg ; v u may, , ‘5‘ E H \ \LUETE [\ HE] 77T E mgrani :nnEL ; 71E E . ; IR, 7" T 7H 7LT E [eruhwhr M: r / mpm ‘ VE‘L‘i HE E TT 7H
IRLL024NTRPbF
7 2019-01-28
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)
FL014N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
SOT-223(TO-261AA) Part Marking Information
(Imneon, _ T 7 F
IRLL024NTRPbF
8 2019-01-28
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
Note: For the most current drawing please refer to Infineon’s web site www.infineon.com
(ifineon, Qualification Information
IRLL024NTRPbF
9 2019-01-28
Revision History
Date Comments
01/28/2019
 Updated datasheet with corporate template.
 Added disclaimer on last page.
 Corrected part number from”IRLL024NPbF” to “IRLL024NTRPbF”-all pages
Qualification Information
Qualification Level Industrial
(per JEDEC JESD47F) †
SOT-223 MSL1
(per JEDEC J-STD-020D) †
RoHS Compliant Yes
Moisture Sensitivity Level
† Applicable version of JEDEC standard at the time of product release (04/27/2004).
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™,
CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
ifx1
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