Datenblatt für ST2408HI von STMicroelectronics

ST2408HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■NEW SERIES, ENHANCED PERFORMANCE
■FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
■HIGH VOLTAGE CAPABILITY
■HIGH SWITCHING SPEED
■TIGTHER hfe CONTROL
■IMPROVED RUGGEDNESS
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR
MONITORS 17 INCHES AND HIGH END TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
®
INTERNAL SCHEMATIC DIAGRAM
December 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB = 0) 600 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 12 A
ICM Collector Peak Current (tp < 5 ms) 25 A
IBBase Current 7 A
Ptot Total Dissipation at TC = 25 oC55W
V
isol Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink 2500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 1500 V 1 mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 7 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA L = 25 mH 600 V
VCE(sat)* Collector-Emitter
Saturation Voltage IC = 8 A IB = 2 A 3 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 8 A IB = 2 A 1.5 V
hFE∗DC Current Gain IC = 1 A VCE = 5 V
IC = 5 A VCE = 1 V
IC = 8 A VCE = 5 V 6
25
5.5 9
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 6 A fh = 64 KHz
IB(on) = 950 mA VBB(off) = -2.5 V
LBB(off) = 1.5 µH (see figure 1)
2.5
110 3
260 µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
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Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Output Characteristics
Base Emitter Saturation Voltage
DC Current Gain
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Power Losses
Figure 1: Inductive Load Switching Test Circuit.
Switching Time Inductive Load
Reverse Biased Soa
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sEc'HoN LEAD SCALE 40:1 E]
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 0.75 0.95 0.030 0.037
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
F5 1.10 0.043
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/B
ISOWATT218 NARROW LEADS MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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