Datenblatt für GSIB15A20 thru GSIB15A80 von Vishay General Semiconductor - Diodes Division

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GSIB15A20, GSIB15A40, GSIB15A60, GSIB15A80
www.vishay.com Vishay General Semiconductor
Revision: 13-Jun-14 1Document Number: 88643
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
MECHANICAL DATA
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB without heatsink
PRIMARY CHARACTERISTICS
Package GSIB-5S
IF(AV) 15 A
VRRM 200 V, 400 V, 600 V, 800 V
IFSM 200 A
IR10 μA
VF at IF = 7.5 V 1.0 V
TJ max. 150 °C
Diode variations In-Line
Case Style GSIB-5S
~~
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GSIB15A20 GSIB15A40 GSIB15A60 GSIB15A80 UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum RMS voltage VRMS 140 280 420 560 V
Maximum DC blocking voltage VDC 200 400 600 800 V
Maximum average forward rectified
output current at
TC = 107 °C (1)
IF(AV)
15 A
TA = 25 °C (2) 3.5
Peak forward surge current single sine-wave
superimposed on rated load IFSM 200 A
Rating for fusing (t < 8.3 ms) I2t 166 A2s
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GSIB15A20 GSIB15A40 GSIB15A60 GSIB15A80 UNIT
Maximum instantaneous forward
voltage drop per diode 7.5 A VF1.00 V
Maximum DC reverse current at
rated DC blocking voltage per diode
TA = 25 °C IR
10 μA
TA = 125 °C 250
VISHAY. DwodesAmencas@\/wshay.com DwodesAswamwshaymm DwodesEuvoge®vlshamcom www.v\shay,com/doc?91000
GSIB15A20, GSIB15A40, GSIB15A60, GSIB15A80
www.vishay.com Vishay General Semiconductor
Revision: 13-Jun-14 2Document Number: 88643
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on PCB without heatsink
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GSIB15A20 GSIB15A40 GSIB15A60 GSIB15A80 UNIT
Typical thermal resistance RJA (2) 22 °C/W
RJC (1) 1.5
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GSIB15A60-E3/45 7.0 45 20 Tube
0
15
20
7550250 100 125 150
10
5
Heatsink Mounting, TC
P.C.B. Mounting, TA
Temperature (°C)
Average Forward Output Current (A)
0
50
100
150
200
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
0.01
10
0.1
1
100
0.3 1.1 1.30.5 0.7 0.9
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
1000
20 6040 10080
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
VISHAY. DwodesAmencasmwshaywm DwodesAswa@wshay,com DwodesEuvogemusnauom www.v\shay,com/doc?91000
GSIB15A20, GSIB15A40, GSIB15A60, GSIB15A80
www.vishay.com Vishay General Semiconductor
Revision: 13-Jun-14 3Document Number: 88643
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
101 1000
1000
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
100
10
1
0.1
0.1 1 100.01
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
2.5 ±0.2
2.2 ±0.2
1±0.1
10 ±0.2
7.5
±0.2
4±0.2 5
20 ±0.3
17
.5±0.5
11 ±0.2
2.7 ± 0.2
3.5 ±0.2
3.2 ±0.2
0.7 ± 0.1
4.6 ±0.2
3.6 ±0.2
+
7.5
±0.2
30 ±0.3
Case Style GSIB-5S
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Revision: 08-Feb-17 1Document Number: 91000
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