Datenblatt für DMMT5551(S) von Diodes Incorporated

W ® DMMT5551/DMMT5551S mam. Green *1 |* 7, 307—26 1—1 H H T Dim Min Max Typ A 0.35 0 50 0.38 B 1.50 1 70 1.60 C 2.70 3 00 2.80 D 7 7 0.95 F 7 7 0.55 H 2.90 3 10 3.00 L J 0013 0 10 0.05 T K 1.00 1 30 1.10 L 0.35 0 55 0.40 M 0.10 0 20 0.15 It 0C 5“ 7 All Dimensions in mm ' u u Ll ' Characterislic Symbol Value Unil Col‘ectorrfiase VoHage vcao 180 v Col‘edorrEmmer thage V550 160 V EmmerrBase Voltage VEEO 60 v Conemor Current , Commuous {Note 2} lg 200 mA Power stsxpanon mm 2, 3) Pg 300 mW Therm Resmance. Juncmn m Amman: (Note 2) RM 417 ”CM Operahng and Storage Temperature Range 1", T5“; 755 to +150 ac
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
DS30436 Rev. 8 - 2 1 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DMMT5401)
• Ideal for Low Power Amplification and Switching
• Intrinsically Matched NPN Pair (Note 1)
• 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
• Lead Free/RoHS Compliant (Note 4)
• "Green" Device (Note 5 and 6)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
• Marking Information: K4R & K4T, See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
F ⎯ ⎯ 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8° ⎯
All Dimens ons in mm i
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
A
Symbol Value Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 2) IC 200 mA
Power Dissipation (Note 2, 3) Pd 300 mW
Thermal Resistance, Junction to Ambient (Note 2) RθJA 417 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Built with adjacent die from a single wafer.
2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
M
JL
DF
BC
H
K
C
2
E
2
E
1
B
2
B
1
C
1
C
2
E
1
C
1
B
2
E
2
B
1
DMMT5551S
(K4T Marking Code)
DMMT5551
(K4R Marking Code)
Characteristic Symbol l Min Max Unit l Test Condition OFF CHARACTERISTICS (Note 7) Collectoraase Breakdown Voltage VlaRlceo 150 7 V Ic 7 100llA, I CollectorEmitter Breakdown Voltage VlERlCEo 160 7 V Ir; 7 1.0mA l EmrttepBase Breakdown Voltage Vlanlgeo 6.0 7 V IE 7 lOIIA‘ IC 7 0 ml Vca 120V, IE 7 n Collector Cutolt Current logo 7 so “A Vce 7120V,IE g 0‘ TA = 100%: Emllter Cutoll Current lgao 7 50 nA V33 7 “IV, lc 7 0 ON CHARACTERISTICS (Note 7) an 7 I07 1.0mA Vc 5.0V DC Current Gain tNote at m an 250 7 Ir; 7 “MA Vc .oV an 7 lc7 5mm ch7 IN 015 |C=10mA, IE7IOmA CollectorEmttter Saturatlon Voltage V935”, 7 020 V Ic = 50”, la 7 5 0m , lc710mA,la 7 I OmA Base Emlller Saturation Voltage Vagtsm 7 1.0 V lc = so“, la g 5 OmA SMALL SIGNAL CHARACTERISTICS Output Capacrtanoe our,“ 7 6.0 pF V95 7 10V, l 7 I OMHz lg 7 a V9 7 10V, Io 71.0mAr Small Slgnal Current Gain neg so 250 7 b ‘ OkHz , VCE 710V,Ic 7 tomA, Current Galrl Bandwidth Product h loo 300 MHz b 100MHz Vc - 5.0V‘ l - 200% Noise Flgure NF 7 3.0 as Rs 7 ‘ 0km LOkHZ l NUIEZ a: o l— E E a: o l— O u; o O F‘ ,F‘OWER
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
DS30436 Rev. 8 - 2 2 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage V(BR)CBO 180 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 160 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICBO ⎯ 50 nA
μA VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8) hFE 80
80
30
⎯
250
⎯
⎯
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.15
0.20 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.0 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain hFE 50 250 ⎯ VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure NF ⎯ 8.0 dB VCE = 5.0V, IC = 200μA,
RS = 1.0kΩ, f = 1.0kHz
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, hFE, (matched at IC = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage,
VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
110100
1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
C
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
400
0
\ i i i (D b 9 0 CE I; m g I: at s 3 m L) L) D I E h L) 3 D 0 at n. I h D 0 Device Packaging Shipping DMMT5551777F $0126 GOOD/Tape & Ree-i DMMT5551SV77F $0126 GOOD/Tape & Ree-i . Vear 2003 2004 2005 2006 2007 2003 2009 2010 2011 2012 Code P R S T U V W X V Z Monlh Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 E 9 O N D
1
10
1,000
100
110 100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 110
100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
110
f,
100
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
C
Ordering Information (Note 6 & 9 )
Device Packaging Shipping
DMMT5551-7-F SOT-26 3000/Tape & Reel
DMMT5551S-7-F SOT-26 3000/Tape & Reel
Notes: 9. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4T
YM
C
2
B
2
E
1
E
2
C
1
B
1
K4R
YM
C
2
B
2
E
2
B
1
E
1
C
1
K4R = DMMT5551 Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
K4T = DMMT5551S Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
DS30436 Rev. 8 - 2 3 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30436 Rev. 8 - 2 4 of 4
www.diodes.com
DMMT5551/DMMT5551S
© Diodes Incorporated