Datenblatt für AO4807(L)

ALPIiA & OMEGA SEMICONDUCTOR I'IHI'H'I IJLIIJLI Drawanoque Vollage ,30
AO4807
30V Dual P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -6A
R
DS(ON)
(at V
GS
=-10V) < 35mΩ
R
DS(ON)
(at V
GS
= -4.5V) < 58mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
The AO4807 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-30V
Drain-Source Voltage
-30
G1
D1
S1
G1
S1
G2
S2
D1
D1
D2
D2
2
4 5
1
3
8
6
7
Top View
SOIC-8
Top View Bottom
Pin1
G2
D2
S2
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
40
Maximum Junction-to-Ambient
T
A
=25°C
Avalanche Current
C
W
2
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
32 90
26
A23
T
A
=25°C
T
A
=70°C
°C/W
R
θJA
48
Power Dissipation
B
P
D
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=70°C
V
Drain-Source Voltage
-30
1.3
74 62.5
A
I
D
-6
Units
V±20Gate-Source Voltage
-5
-30
mJ
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter Typ Max
G1
D1
S1
G1
S1
G2
S2
D1
D1
D2
D2
2
4 5
1
3
8
6
7
Top View
SOIC-8
Top View Bottom
Pin1
G2
D2
S2
Rev 6: Nov 2011
www.aosmd.com Page 1 of 6
ALPHA & OMEGA AMICOND L'CTOR
AO4807
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.3 -1.85 -2.4 V
I
D(ON)
-30 A
21 35
T
J
=125°C 31.5 45
33 58 mΩ
g
FS
19 S
V
SD
-0.8 -1 V
I
S
-3.5 A
C
iss
760 pF
C
oss
140 pF
C
rss
95 pF
R
g
1.5 3.2 5.0 Ω
Q
g
(10V) 13.6 16 nC
Q
g
(4.5V) 6.7 8 nC
Q
gs
2.5 nC
Q
gd
3.2 nC
t
D(on)
8 ns
t
6
ns
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-6A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-6A
V
GS
=-4.5V, I
D
=-5A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=-10V, V
=-15V, R
=2.7
Ω
,
t
r
6
ns
t
D(off)
17 ns
t
f
5 ns
t
rr
15 ns
Q
rr
9.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time I
F
=-6A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=-6A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=2.7
Ω
,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 6: Nov 2011 www.aosmd.com Page 2 of 6
W SEMICONI) UC’I'OR 125' c #
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4 4.5 5
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
45
50
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-4.5V
ID=-5A
VGS=-10V
ID=-6A
25°C
125°C
V
DS
=-5V
VGS=-4.5V
V
GS
=
-
10V
0
5
10
15
20
25
30
35
40
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=
-
3V
-3.5V
-
6V
-
5V
-10V
-
4.5V
-
4V
40
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4 4.5 5
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
35
40
45
50
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25
°
C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-4.5V
ID=-5A
VGS=-10V
ID=-6A
0
20
40
60
80
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=-5V
VGS=-4.5V
V
GS
=
-
10V
ID=-6A
25°C
125
°
C
0
5
10
15
20
25
30
35
40
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=
-
3V
-3.5V
-
6V
-
5V
-10V
-
4.5V
-
4V
Rev 6: Nov 2011 www.aosmd.com Page 3 of 6
W SEMICONDUCTOR , // I // E E mm \ \\\ \~- ' \
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 2 4 6 8 10 12 14
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-6A
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
10ms
10.0
100.0
1 10 100 1000
-IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
TA=25°C
TA=150°C
TA=100°C
T
A
=125°C
0
2
4
6
8
10
0 2 4 6 8 10 12 14
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-6A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
10ms
10.0
100.0
1 10 100 1000
-IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
TA=25°C
TA=150°C
TA=100°C
T
A
=125°C
Rev 6: Nov 2011 www.aosmd.com Page 4 of 6
ALPHA & OMEGA 'MICONI) UC’I'OR
AO4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
Rev 6: Nov 2011 www.aosmd.com Page 5 of 6
ALPHA & OMEGA SEMICUND UCTUR
AO4807
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
2
E = 1/2 LI
AR
AR
BV
DSS
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 6: Nov 2011
www.aosmd.com
Page 6 of 6
ALPHA & OMEGA SEMICONDUCTOR DucumrmL Nu. Pnraoozs Versmn y rule A04xu7 Vlurkmg Dmcnpuun 50-8 PACKAGE MARKING DESCRIPTION HHHH @ 4807 FAYWLT NUTF: LOGO , ADS Logo 4807 . Pan number code F , I- ah code A , Assembly Iocmion code v . Year code w , Week code L&T , Assembly 10\ cud: PART NO. DESCRIPTION CODE A04807 Grccn product 4807 AO4807L Grccn product 4807 UUULI Grccn product
VersIon ALPHA & OMEGA Document No. Po-ooooa W m K 508(SOP-8L) PACKAGE OUTLINE 'GAUGE PLANE SEATING PLANE I: I: I: hx45" Q) 4220* . a a a ._‘.._._‘, | 5 74 UNIT: mm NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. MOLD FLASH AT THE NONVLEAD SIDES SHOULD BE LESS THAN 6 MILS EACH. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILV EXACT.
MIN NOM MAX MIN NOM MAX
A 1.35 1.65 1.75 0.053 0.065 0.069
A1 0.10 0.15 0.25 0.004 0.006 0.010
A2 1.25 1.50 1.65 0.049 0.059 0.065
b 0.31 0.41 0.51 0.012 0.016 0.020
c 0.17 0.20 0.25 0.007 0.008 0.010
D 4.80 4.90 5.00 0.189 0.193 0.197
E 3.80 3.90 4.00 0.150 0.154 0.157
E1 5.80 6.00 6.20 0.228 0.236 0.244
e
h 0.25 0.30 0.50 0.010 0.012 0.020
L 0.40 0.69 1.27 0.016 0.027 0.050
θ 0° 4° 8° 0° 4° 8°
DIMENSION IN INCHESDIMENSION IN MM
SYMBOLS
1.27 BSC 0.050 BSC
ALPHA & OMEGA SO7/SOS/SOS_EP Tape and Reel W SEMICONDUCTOR Data SO7/SOS/SOS EP Camcr Tan ——P1* SEENDTE 3 D1 *Pa_ _ *HkT :EENDTE 5 ‘ E ( b ® 6) 1 0) 69 61> . , m I “J: m Gr) 93 GB 9 (43" E z \ | E D \ VD .. L K0~ —— DU —> A0 — PU * rmmm nIREchN UNIT: MM PACKAGE AD 130 KU 00 01 E E1 Ea PU P1 P2 T 307/30—0 5.40 5.20 2.10 1.50 1.50 12.00 1.75 5.50 0.00 4.00 2.00 0.25 (12 m) 10.10 10.10 20.10 20.10 +0.10 10.30 10.10 10.05 10.10 10.10 20.05 20.05 SO7/S08/SOK EP Reel i i z z -| I—w UNIT: MM TAPE SIZE REEL SIZE M N V VI H K S G R V 12 Mr: 0330 (8330.00 $97.00 13.00 17.40 $13.00 10.60 2.00 --- --— —-— 10.50 10.10 10.30 11.00 +333 1050 SO7/SOS/SOX EP Tags Lcadcr / Trailer & Onemauon O O O O /O O O O O O 30.55:... 1.51” H” 1 ENE 1—7 TRAILER TAPE 4+7 CDMPDNENT: TAPE 4+7 LEADER TAPE 4—1 300 MM MIN DR DRIENTATIEIN IN PDCKET 500 Mm MIN. DR
ALPHA & OMEGA suntan-nun we www.aosmd.com
1
AOS Semiconductor
Product Reliability Report
AO4807/AO4807L, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742 www.aosmd.com
May 15, 2006
ALPHA & OMEGA .YlJi/(‘U\I)UL IUR
2
This AOS product reliability report summarizes the qualification result for AO4807. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AO4807 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I. Product Description
II. Package and Die information
III. Environmental Stress Test Summary and Result
IV. Reliability Evaluation
V. Quality Assurance Information
I. Product Description:
The AO4807 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low
gate charge. This device is suitable for use as a load switch or in PWM applications. Standard
Product AO4807 is Pb-free (meets ROHS & Sony 259 specifications). AO4807L is a Green
Product ordering option. AO4807 and AO4807L are electrically identical.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
TA=25°C -6
Continuous Drain
Current TA=70°C ID -5
Pulsed Drain Current IDM -30
A
TA=25°C 2
Power Dissipation TA=70°C
PD
1.44
W
Junction and Storage
Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-
Ambient T ≤ 10s 48 62.5 °C/W
Maximum Junction-to-
Ambient
Steady-
State
RθJA
74 110 °C/W
Maximum Junction-to-Lead Steady-
State R
θ
JL 35 40 °C/W
ALPHA & OMEGA .YlJi/(‘U\I)UL IUR
3
II. Die / Package Information:
AO4807 AO4807L (Green Compound)
Process Standard sub-micron Standard sub-micron
low voltage P channel process low voltage P channel process
Package Type 8 leads SOIC 8 leads SOIC
Lead Frame Copper with Solder Plate Copper with Solder Plate
Die Attach Ag epoxy Ag epoxy
Bond wire Au 2mils Au 2 mils
Mold Material Epoxy resin with silica filler Epoxy resin with silica filler
Filler % (Spherical/Flake) 90/10
100/0
Flammability Rating UL-94 V-0 UL-94 V-0
Backside Metallization Ti / Ni / Ag Ti / Ni / Ag
Moisture Level Up to Level 1 * Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4807 (Standard) & AO4807L (Green)
Test Item Test Condition Time
Point Lot Attribution Total
Sample
size
Number
of
Failures
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle reflow@260°c
Green: 168hr 85°c
/85%RH +3 cycle
reflow@260°c
0hr Standard: 83 lots
Green: 29 lots
17380 pcs
0
HTGB
Temp = 150°c ,
Vgs=100% of Vgsmax 168 / 500
hrs
1000 hrs
12 lots
(Note A*)
984 pcs
77+5 pcs /
lot
0
HTRB
Temp = 150°c ,
Vds=80% of Vdsmax 168 / 500
hrs
1000 hrs
12 lots
(Note A*)
984 pcs
77+5 pcs /
lot
0
HAST 130 +/- 2°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
100 hrs Standard: 81 lots
Green: 16 lots
(Note B**)
5335 pcs
50+5 pcs /
lot
0
Pressure Pot 121°c , 15+/-1 PSIG,
RH=100% 96 hrs Standard: 83 lots
Green: 20 lots
(Note B**)
5665 pcs
50+5 pcs /
lot
0
Temperature
Cycle -65°c to 150°c ,
air to air 250 / 500
cycles Standard: 87 lots
Green: 29 lots
(Note B**)
6380 pcs
50+5 pcs /
lot
0
ALPHA & ()AMEGA .YLUIL'U\I)UL IUR 230°
4
III. Result of Reliability Stress for AO4807 (Standard) & AO4807L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
NA
5
5
5
5
5
5
0
CSAM
NA 5 5 0
Bond Integrity Room Temp
150°C bake
150°C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability 230°C
5 sec
15
15 leads 0
Die shear 150°C
0hr 10 10 0
Note A: The HTGB and HTRB reliability data presents total of available AO4807 and AO4807L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4807 and AO4807L
comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion):4.3
MTTF = 26547years
In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation
energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the necessary
failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AO4807). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2 (6×164) (168) (258) + 2 (4×164) (500) (258) + 2 (2×164) (1000) (258)] = 4.3
MTTF = 109 / FIT = 2.32 x 108hrs =26547years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C
Af 258 87 32 13 5.64 2.59 1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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5
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D