Datenblatt für IPZA60R045P7

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1
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
1
234
tab
PG-TO247-4-3
Drain
Pin 1
Gate
Pin 4
Power
Source
Pin 2
Driver
Source
Pin 3
MOSFET
600VCoolMOS™P7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
 commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya
 lowRDS(on)*A(below1Ohm*mm²)
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
 acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
 losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
 smallerfootprintandhighermanufacturingqualitydueto>2kVESD
 protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 45 mΩ
Qg,typ 90 nC
ID,pulse 206 A
Eoss @ 400V 9.4 µJ
Body diode diF/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPZA60R045P7 PG-TO 247-4-3 60R045P7 see Appendix A
(imeon
2
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(imeon Table 2 Maximum ratings
3
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
61
38 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 206 A TC=25°C
Avalanche energy, single pulse EAS - - 217 mJ ID=8.5A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 1.08 mJ ID=8.5A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 8.5 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 201 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS- - 61 A TC=25°C
Diode pulse current2) IS,pulse - - 206 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=61A,Tj=25°C
see table 8
Maximum diode commutation speed diF/dt - - 900 A/µsVDS=0...400V,ISD<=61A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
(imeon Table 3 Thermal characteristics
4
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.62 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W -
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
(Iniineon Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate char e characteristics
5
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=1.08mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.038
0.089
0.045
-ΩVGS=10V,ID=22.5A,Tj=25°C
VGS=10V,ID=22.5A,Tj=150°C
Gate resistance RG-2-Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 3891 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 63 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 117 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 1212 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 27 - ns VDD=400V,VGS=13V,ID=22.5A,
RG=3.0Ω;seetable9
Rise time tr- 7 - ns VDD=400V,VGS=13V,ID=22.5A,
RG=3.0Ω;seetable9
Turn-off delay time td(off) - 88 - ns VDD=400V,VGS=13V,ID=22.5A,
RG=3.0Ω;seetable9
Fall time tf- 4 - ns VDD=400V,VGS=13V,ID=22.5A,
RG=3.0Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 20 - nC VDD=400V,ID=22.5A,VGS=0to10V
Gate to drain charge Qgd - 28 - nC VDD=400V,ID=22.5A,VGS=0to10V
Gate charge total Qg- 90 - nC VDD=400V,ID=22.5A,VGS=0to10V
Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=22.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
(imeon Table 7 Reverse diode characteristics
6
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=22.5A,Tj=25°C
Reverse recovery time trr - 277 - ns VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 3.6 - µC VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 26.8 - A VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
(ifileon
7
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
50
100
150
200
250
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
single pulse
0.01
ZthJC=f(tP);parameter:D=tp/T
(ifileon [D
8
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
50
100
150
200
250
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
30
60
90
120
150
180
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 20 40 60 80 100 120 140 160
0.070
0.090
0.110
0.130
0.150
0.170
0.190
0.210
7 V
20 V
10 V
6.5 V
6 V
5.5 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[normalized]
-50 -25 0 25 50 75 100 125 150
0.000
0.500
1.000
1.500
2.000
2.500
3.000
RDS(on)=f(Tj);ID=22.5A;VGS=10V
(ifileon
9
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
50
100
150
200
250
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 20 40 60 80 100 120
0
2
4
6
8
10
12
120 V 400 V
VGS=f(Qgate);ID=22.5Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10-1
100
101
102
103
125 °C
25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
50
100
150
200
250
EAS=f(Tj);ID=8.5A;VDD=50V
(ifileon
10
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-50 -25 0 25 50 75 100 125 150
540
550
560
570
580
590
600
610
620
630
640
650
660
670
680
690
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
3
6
9
12
15
18
Eoss=f(VDS)
(imeon
11
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
infineon EXPOSED D‘EPAD NOTES ALL D‘MENS‘UNS DD NUT \NELUDE MULD FLASH UR PROTRUSKJNS
12
600VCoolMOS™P7PowerTransistor
IPZA60R045P7
Rev.2.0,2019-02-28Final Data Sheet
6PackageOutlines
DIMENSIONS MIN. MAX.
A2
L
b
D
c
b2
E
e1
L1
Q
øP2
D1
A
A1
2.101.90
5.08
19.80
-
20.90
0.58
0.65
15.70
5.60
2.40
16.25
20.10
0.79
0.66
0.20
21.10
6.00
2.60
4.30
15.90
16.85
MILLIMETERS
4.90
2.31
5.10
2.51
b1
1.10 1.30
b3
PG-TO247-4-3
SCALE
Z8B00184785
REVISION
ISSUE DATE
EUROPEAN PROJECTION
03
21.08.2017
05
DOCUMENT NO.
2:1
A3 0.250.05
D2 1.05 1.35
D3 24.97 25.27
10mm
E1 13.10 13.50
E2 2.40 2.60
-
øP1 7.00 7.40
øP 3.50 3.70
S6.15
T9.80 10.20
U6.00 6.40
1.34 1.44
e2 2.79
e3 2.54
D4 4.90 5.10
Figure 1 Outline PG-TO 247-4-3, dimensions in mm
infineon www.infineon.com www.in1ineon.c0m www.in1ineon.c0m
13
600V CoolMOS™ P7 Power Transistor
IPZA60R045P7
Rev. 2.0, 2019-02-28Final Data Sheet
7 Appendix A
Table 11 Related Links
•IFX CoolMOS P7 Webpage: www.infineon.com
•IFX CoolMOS P7 application note: www.infineon.com
•IFX CoolMOS P7 simulation model: www.infineon.com
•IFX Design tools: www.infineon.com
(imeon
14
600V CoolMOS™ P7 Power Transistor
IPZA60R045P7
Rev. 2.0, 2019-02-28Final Data Sheet
Revision History
IPZA60R045P7
Revision: 2019-02-28, Rev. 2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2019-02-28 Release of final version
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