Datenblatt für SI4448DY von Vishay Siliconix

VISHAYE DUDE UUUU ® RoHS comm mam m‘s‘s
Vishay Siliconix
Si4448DY
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
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1
N-Channel 12-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• POL
• DC/DC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)ID (A)aQg (Typ.)
12
0.0017 at VGS = 4.5 V 50
56 nC
0.002 at VGS = 2.5 V 46
0.0027 at VGS = 1.8 V 40
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4448DY-T1-E3 (Lead (Pb)-free)
Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
GD
SD
SD
SD
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 12 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
50
A
TC = 70 °C 40
TA = 25 °C 32b, c
TA = 70 °C 26b, c
Pulsed Drain Current IDM 70
Continuous Source-Drain Diode Current TC = 25 °C IS
7
TA = 25 °C 3b, c
Single Pulse Avalanche Current L = 0.1 mH IAS 20
Avalanche Energy EAS 20 mJ
Maximum Power Dissipation
TC = 25 °C
PD
7.8
W
TC = 70 °C 5.0
TA = 25 °C 3.5b, c
TA = 70 °C 2.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 29 35 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16
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Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
Vishay Siliconix
Si4448DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V
VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 14 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 3.3
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 12 V, VGS = 0 V 1µA
VDS = 12 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 4.5 V 40 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 20 A 0.0014 0.0017
Ω
VGS = 2.5 V, ID = 15 A 0.0016 0.0020
VGS = 1.8 V, ID = 10 A 0.0022 0.0027
Forward Transconductanceagfs VDS = 6 V, ID = 20 A 190 S
Dynamicb
Input Capacitance Ciss
VDS = 6 V, VGS = 0 V, f = 1 MHz
12350
pFOutput Capacitance Coss 2775
Reverse Transfer Capacitance Crss 1590
Total Gate Charge Qg
VDS = 6 V, VGS = 4.5 V, ID = 10 A 99 150
nC
VDS = 6 V, VGS = 2.5 V, ID = 10 A
56 85
Gate-Source Charge Qgs 10.3
Gate-Drain Charge Qgd 13.4
Gate Resistance Rgf = 1 MHz 0.75 1.5 Ω
Tur n - O n D e l ay Time td(on)
VDD = 6 V, RL = 0.6 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
38 70
ns
Rise Time tr22 40
Turn-Off Delay Time td(off) 240 400
Fall Time tf33 55
Tur n - O n D e l ay Time td(on)
VDD = 6 V, RL = 0.6 Ω
ID ≅ 10 A, VGEN = 8 V, Rg = 1 Ω
20 40
Rise Time tr11 22
Turn-Off Delay Time td(off) 100 170
Fall Time tf11 22
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 7A
Pulse Diode Forward CurrentaISM 70
Body Diode Voltage VSD IS = 3 A 0.54 1.1 V
Body Diode Reverse Recovery Time trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
84 140 ns
Body Diode Reverse Recovery Charge Qrr 93 150 nC
Reverse Recovery Fall Time ta28 ns
Reverse Recovery Rise Time tb56
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
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Vishay Siliconix
Si4448DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
14
28
42
56
70
0 0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)
ID
VGS =5thru1.5 V
1V
0.0010
0.0013
0.0016
0.0019
0.0022
0.0025
0142842 56 70
- On-Resistance (Ω)RDS(on)
ID- Drain Current (A)
VGS =4.5V
VGS =2.5V
VGS =1.8V
0.0
0.9
1.8
2.7
3.6
4.5
0 22446688 110
ID=10A
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VGS
VDS =4V
VDS =6V
VDS =8V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0 0.3 0.6 0.9 1.2 1.5
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)
ID
TC= 25 °C
TJ= - 55 °C
TC= 125 °C
Crss
0
3200
6400
9600
12 800
16 000
0246810 12
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
(Normalized)
- On-Resistance
RDS(on)
ID=20A
VGS =1.8V
VGS =4.5V
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Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
Vishay Siliconix
Si4448DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0 0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
- Source Current (A)
IS
1
0.01
0.001
0.1
10
100
TJ= 25 °C
TJ= 150 °C
- 0.5
- 0.3
- 0.1
0.1
0.3
- 50 - 25 0 25 50 75 100 125 150
ID= 250 µA
Variance (V)VGS(th)
TJ- Temperature (°C)
ID=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.002
0.004
0.006
0.008
0.010
012345
- On-Resistance (Ω)R DS(on)
VGS - Gate-to-Source Voltage (V)
TA= 25 °C
TA= 125 °C
ID=20A
0
40
80
120
160
200
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
ID
0.1
VDS - Drain-to-Source Voltage (V)
*VGS > minimumVGS at which RDS(on) is specified
1ms
10 ms
100 ms
DC
10 s
0.1 1 10
10
TA= 25 °C
Single Pulse
1s
Limited byR
DS(on)*
— VISHAYE V
Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
5
Vishay Siliconix
Si4448DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
11
22
33
44
55
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Foot
0
2
4
6
8
10
0 25 50 75 100 125 150
TC- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
TA- Ambient Temperature (°C)
Power (W)
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Document Number: 69653
S09-0138-Rev. B, 02-Feb-09
Vishay Siliconix
Si4448DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69653.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 000101110-1 100
0.2
0.1
0.05
0.02
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA =80 °C/W
3. TJM - TA=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
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Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
VISHAY» (A 359} 0 24s (a 242) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) mm ws we 22
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
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Revision: 08-Feb-17 1Document Number: 91000
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