Datenblatt für OPA827 von Texas Instruments

V'.‘ ‘F. B X E I TEXAS INSTRUMENTS 100
Voltage Noise Density (nV/ )Hz
0.1
100
1
Frequency (Hz)
10k101
10
100 1k 10k
V = 18V
S±
√
50nV/div
Time (1s/div)
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA827
SBOS376I –NOVEMBER 2006–REVISED JULY 2016
OPA827 Low-Noise, High-Precision, JFET-Input
Operational Amplifier
1
1 Features
1• Input Voltage Noise Density:
4 nV/√Hz at 1 kHz
• Input Voltage Noise:
0.1 Hz to 10 Hz: 250 nVPP
• Input Bias Current: 10 pA (Maximum)
• Input Offset Voltage: 150 µV (Maximum)
• Input Offset Drift: 2 µV/°C (Maximum)
• Gain Bandwidth: 22 MHz
• Slew Rate: 28 V/µs
• Quiescent Current: 4.8 mA/Ch
• Wide Supply Range: ±4 V to ±18 V
• Packages: 8-Pin SOIC and 8-Pin VSSOP
2 Applications
• ADC Drivers
• DAC Output Buffers
• Test Equipment
• Medical Equipment
• PLL Filters
• Seismic Applications
• Transimpedance Amplifiers
• Integrators
• Active Filters
3 Description
The OPA827 series of JFET operational amplifiers
combine outstanding DC precision with excellent AC
performance. These amplifiers offer low offset voltage
(150 µV, maximum), very low drift over temperature
(0.5 µV/°C, typical), low-bias current (3 pA, typical),
and very low 0.1-Hz to 10-Hz noise (250 nVPP,
typical). The device operates over a wide supply
voltage range, ±4 V to ±18 V on a low supply current
(4.8 mA/Ch, typical).
Excellent AC characteristics, such as a 22-MHz gain
bandwidth product (GBW), a slew rate of 28 V/µs,
and precision DC characteristics make the OPA827
series well-suited for a wide range of applications
including 16-bit to 18-bit mixed signal systems,
transimpedance (I/V-conversion) amplifiers, filters,
precision ±10-V front ends, and professional audio
applications.
The OPA827 is available in both 8-pin SOIC and 8-
pin VSSOP surface-mount packages, and is specified
from –40°C to 125°C.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
OPA827 SOIC (8) 4.90 mm × 3.91 mm
VSSOP (8) 3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Input Voltage Noise Density vs Frequency 0.1-Hz to 10-Hz Noise
l TEXAS INSTRUMENTS
2
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 4
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Typical Characteristics.............................................. 8
7 Detailed Description............................................ 15
7.1 Overview ................................................................. 15
7.2 Functional Block Diagram....................................... 15
7.3 Feature Description................................................. 15
7.4 Device Functional Modes........................................ 20
8 Application and Implementation ........................ 21
8.1 Application Information............................................ 21
8.2 Typical Application .................................................. 21
8.3 System Examples .................................................. 22
9 Power Supply Recommendations...................... 24
10 Layout................................................................... 25
10.1 Layout Guidelines ................................................. 25
10.2 Layout Example .................................................... 25
11 Device and Documentation Support ................. 26
11.1 Device Support...................................................... 26
11.2 Documentation Support ........................................ 26
11.3 Receiving Notification of Documentation Updates 26
11.4 Community Resource............................................ 26
11.5 Trademarks........................................................... 26
11.6 Electrostatic Discharge Caution............................ 26
11.7 Glossary................................................................ 26
12 Mechanical, Packaging, and Orderable
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (May 2012) to Revision I Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
• Deleted Package/Ordering Information table, see POA at the end of the data sheet............................................................ 4
• Changed values in the Thermal Information table to align with JEDEC standards................................................................ 5
Changes from Revision G (February 2012) to Revision H Page
• Updated Figure 3.................................................................................................................................................................... 8
• Updated Figure 4.................................................................................................................................................................... 8
Changes from Revision F (March 2009) to Revision G Page
• Changed Input bias current and Input offset drift Features bullets ........................................................................................ 1
• Changed product status from Mixed Status to Production Data ............................................................................................ 1
• Changed description of amplifier drift and bias current in first paragraph of Description section.......................................... 1
• Deleted high grade (OPA827I) option and footnote 2 from Package/Ordering Information table.......................................... 4
• Deleted high grade (OPA827I) option from Electrical Characteristics table........................................................................... 6
• Changed Offset Voltage, Input Offset Voltage Drift parameter typical and maximum specifications in Electrical
Characteristics table ............................................................................................................................................................... 6
• Changed Input Bias Current section specifications in Electrical Characteristics table........................................................... 6
• Changed -40°C to +85°C Input Bias Current parameter unit................................................................................................. 6
• Added Frequency Response, Slew Rate parameter minimum specification to Electrical Characteristics table.................... 6
• Added Output, Short-Circuit Current parameter minimum specification to Electrical Characteristics table........................... 7
• Updated Figure 7.................................................................................................................................................................... 8
• Updated Figure 8.................................................................................................................................................................... 8
l TEXAS INSTRUMENTS
3
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• Updated Figure 9.................................................................................................................................................................... 8
• Updated Figure 11.................................................................................................................................................................. 8
• Updated Figure 12.................................................................................................................................................................. 8
• Updated Figure 14.................................................................................................................................................................. 9
l TEXAS INSTRUMENTS E % E>Lj E j
1
2
3
4
8
7
6
5
NC(1)
V+
Out
NC(1)
NC(1)
-In
+In
V-
4
OPA827
SBOS376I –NOVEMBER 2006–REVISED JULY 2016
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5 Pin Configuration and Functions
D and DGK Packages
8-Pin SOIC and VSSOP
Top View
(1) NC denotes no internal connection.
Pin Functions
PIN I/O DESCRIPTION
NO. NAME
+IN 3 I Noninverting input
–IN 2 I Inverting input
NC 1, 5, 8 — No internal connection (can be left floating)
OUT 6 O Output
V+ 7 — Positive power supply
V– 4 — Negative power supply
l TEXAS INSTRUMENTS
5
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must
be current-limited to 10 mA or less.
(3) Short-circuit to VS/2 (ground in symmetrical dual-supply setups).
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VS= (V+) – (V–) 40 V
Input voltage(2) (V–) – 0.5 (V+) + 0.5 V
Input current(2) ±10 mA
Differential input voltage ±VSV
Output short-circuit(3) Continuous
Operating temperature, TA–55 150 °C
Junction temperature, TJ150 °C
Storage temperature, Tstg –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VSSupply voltage ±4 ±18 V
TASpecified temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
OPA827
UNITD (SOIC) DGK (VSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 160 180 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 75 55 °C/W
RθJB Junction-to-board thermal resistance 60 130 °C/W
ψJT Junction-to-top characterization parameter 9 — °C/W
ψJB Junction-to-board characterization parameter 50 120 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
l TEXAS INSTRUMENTS
6
OPA827
SBOS376I –NOVEMBER 2006–REVISED JULY 2016
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6.5 Electrical Characteristics
at VS= ±4 V to ±18 V, TA= 25°C, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VS= ±15 V, VCM = 0 V 75 150 µV
dVOS/dT Input offset voltage drift TA= –40°C to 125°C 0.1 2 µV/°C
PSRR Input offset voltage vs power
supply
0.2 1 µV/V
TA= –40°C to 125°C 3
INPUT BIAS CURRENT
IBInput bias current
±3 ±10 pA
TA= –40°C to 85°C ±500 pA
TA= –40°C to 125°C ±5 nA
IOS Input Offset Current ±3 ±10 pA
NOISE
en
Input Voltage Noise: f = 0.1 Hz to 10 Hz, VS= ±18 V, VCM = 0 V 250 nVPP
Input Voltage Noise Density f = 1 kHz, VS= ±18 V, VCM = 0 V 4 nV/√Hz
f = 10 kHz, VS= ±18 V, VCM = 0 V 3.8
inInput current noise density f = 1 kHz, VS= ±18 V, VCM = 0 V 2.2 fA/√Hz
INPUT VOLTAGE RANGE
VCM Common-mode voltage
range (V–) + 3 (V+) – 3 V
CMRR Common-mode rejection
ratio
(V−) + 3 V ≤VCM ≤(V+) −3 V, VS< 10 V 104 114
dB
(V−) + 3 V ≤VCM ≤(V+) −3 V, VS≥10 V 114 126
(V−) + 3 V ≤VCM ≤(V+) −3 V, VS< 10 V
TA= –40°C to 125°C 100
(V−) + 3 V ≤VCM ≤(V+) −3 V, VS≥10 V
TA= –40°C to 125°C 110
INPUT IMPEDANCE
Differential 1013 ∥9Ω∥pF
Common-mode 1013 ∥9Ω∥pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain
(V–) + 3 V ≤VO≤(V+) – 3 V, RL= 1 kΩ120 126
dB
(V–) + 3 V ≤VO≤(V+) – 3 V, RL= 1 kΩ
TA= –40°C to 125°C 114
FREQUENCY RESPONSE
GBW Gain-bandwidth product G = +1 22 MHz
SR Slew rate G = –1 20 28 V/µs
tSSettling time
±0.01%, 10-V step, G = –1, CL= 100 pF 550 ns
0.00075% (16-bit), 10-V step, G = –1,
CL= 100 pF 850 ns
Overload recovery time Gain = –10 150 ns
THD+N Total Harmonic Distortion +
Noise
G = +1, f = 1 kHz 0.00004%
VO= 3 VRMS, RL= 600 Ω–128 dB
l TEXAS INSTRUMENTS
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Electrical Characteristics (continued)
at VS= ±4 V to ±18 V, TA= 25°C, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
Voltage output swing
RL= 1 kΩ, AOL > 120 dB (V–) + 3 (V+) – 3
V
RL= 1 kΩ, AOL > 114 dB
TA= –40°C to 125°C (V–) + 3 (V+) – 3
IOUT Output current |VS– VOUT| < 3 V 30 mA
ISC Short-circuit current ±55 ±65 mA
CLOAD Capacitive load drive See Typical Characteristics
ZOOpen-loop output
impedance See Typical Characteristics
POWER SUPPLY
VSSpecified voltage ±4 ±18 V
IQQuiescent current
(per amplifier)
IOUT = 0A 4.8 5.2 mA
TA= –40°C to 125°C 6
‘5‘ TEXAS INSTRUMENTS
-150
OffsetVoltage( V)m
Population
-135
-120
-105
-90
-75
-60
-45
-30
-15
0
15
30
45
75
90
105
120
135
150
60
V = 15V
S±
0.00001
0.0001
0.001
0.01
20 100 1k 10k 20k
G = 10
G = 1
Frequency (Hz)
THD+N (%)
VS = ±15V
RL = 600Ω
VOUT = 3VRMS
G000
0.00001
0.0001
0.001
0.01
10m 100m 1 10 20
G = 10
G = 1
Voltage (Vrms)
THD+N (%)
VS = ±15V
RL = 600 Ω
f = 1 kHz
G001
VoltageNoiseDensity(nV/ )ÖHz
0.1
100
1
Frequency(Hz)
10k101
10
100 1k 10k
Bandwidth(Hz)
InputVoltageNoise( V)m
10 10M
100
10
1
0.1
0.01
1100 1k 10k 100k 1M
NoiseBandwidth:0.1Hz
toindicatedfrequency.
VPP
VRMS
8
OPA827
SBOS376I –NOVEMBER 2006–REVISED JULY 2016
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6.6 Typical Characteristics
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
Figure 1. Input Voltage Noise Density vs Frequency Figure 2. Integrated Input Voltage Noise vs Bandwidth
Figure 3. Total Harmonic Distortion + Noise Ratio
vs Frequency Figure 4. Total Harmonic Distortion + Noise Ratio
vs Amplitude
Figure 5. 0.1-Hz to 10-Hz Noise Figure 6. Offset Voltage Production Distribution
l TEXAS INSTRUMENTS 250 2am em 250 Temperature (“0)
−10
−8
−6
−4
−2
0
2
4
6
8
10
4 6 8 10 12 14 16 18
Supply Voltage (V)
Input Bias Current (pA)
−IB
+IB
G002
Temperature ( C)°
V ( V)m
OS
250
200
150
100
50
0
-50
-100
-150
-200
-250
0-25-50 25 50 75 100 150125
-75
Specified Temperature Range
V = 15V
S±
Time(s)
V Shift( V)m
OS
500 300
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
100 150 200 250
V = 15V
S±20TypicalUnitsShown
V (V)
CM
V ( V)m
OS
250
200
150
100
50
0
-50
-100
-150
-200
-250
138 18 23 3328
3
10 Typical Units Shown
V = 36V
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
5
10
15
20
25
Offset Voltage Drift (µV/°C)
Pecentage of Amplifiers (%)
G001
V (V)
CM
V ( V)m
OS
250
200
150
100
50
0
-50
-100
-150
-200
-250
3.63.43.2 3.8 4.0 4.44.2 4.6 5.04.8
3.0
10 Typical Units Shown
V = 8V
S
9
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Typical Characteristics (continued)
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
Figure 7. Offset Voltage Drift Production Distribution Figure 8. Offset Voltage vs Common-Mode Voltage
Figure 9. Offset Voltage vs Common-Mode Voltage Figure 10. VOS Warmup
Figure 11. Offset Voltage vs Temperature Figure 12. Input Bias Current and Offset Current
vs Supply Voltage
l TEXAS INSTRUMENTS
V (V)
S
I (mA)
Q
5.00
4.95
4.90
4.85
4.80
4.75
4.70
4.65
4.60
38
8 13 18 23 28 33
OutputCurrent(mA)
V = 5V
S±
OutputSwing(V)
5
4
3
2
1
0
-1
-2
-3
-4
-5
73
20 30 40 50 60 70
+150 C°
+85 C°
-40 C°
+125 C°
+25 C°
-40 C°
-55 C°
-55 C°
Time(s)
)Am(tfihS
Q
I
0.05
0
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-0.35
-0.40
-0.45
300
0 50 100 150 200 250
10TypicalUnitsShown
Temperature( C)°
I (mA)
Q
0-25-50 25 50 75 100 150125
6.0
5.5
5.0
4.5
4.0
3.5
-75
V = 18V±
S
V = 5V±
S
V (V)
CM
I (pA)
B
20
15
10
5
0
-5
-10
-15
-20
18
-18 -15 -12 -9-6-3 0 3 6 9 12 15
Unit1
Unit2
Unit3
SpecifiedCommon-Mode
VoltageRange
0
2000
4000
6000
8000
10000
12000
−50 −25 0 25 50 75 100 125 150
Temperature (°C)
Input Bias Current (pA)
−IB
+IB
IOS
G002
10
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Typical Characteristics (continued)
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
Figure 13. Input Bias Current vs Common-Mode Voltage Figure 14. Input Bias Current vs Temperature
Figure 15. Normalized Quiescent Current vs Time Figure 16. Quiescent Current vs Temperature
Figure 17. Quiescent Current vs Supply Voltage Figure 18. Output Voltage Swing vs Output Current
l TEXAS INSTRUMENTS
Frequency(Hz)
Gain(dB)
10 100M
140
120
100
80
60
40
20
0
-20
Phase( )°
0
-45
-90
-135
-180
1 100 1k 10k 100k 1M 10M
Phase
Gain
Temperature( C)°
CMRR( V/V)m
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
150
-75 -50 -25 0 25 50 75 100 125
Frequency(Hz)
CMRR(dB)
1001010.1 1k 10k 100k 1M 100M10M
140
120
100
80
60
40
20
V 10V
S³
Temperature( C)°
PSRR( V/V)m
0.30
0.25
0.20
0.15
0.10
0.05
0-25-50 25 50 75 100 150125
-75
OutputCurrent(mA)
OutputSwing(V)
53
+150 C°
48 63 73
16
12
8
4
0
-4
-8
-12
-16
58 68
+25 C°- °40 C -55 C°
+125 C°+85 C°
V = 18V
S±
Frequency(Hz)
PSRR(dB)
100101 1k 10k 100k 1M 100M10M
180
160
140
120
100
80
60
40
20
0
0.1
Positive
Negative
ReferredtoInput
11
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Typical Characteristics (continued)
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
Figure 19. Output Voltage Swing vs Output Current Figure 20. Power-Supply Rejection Ratio vs Frequency
Figure 21. Common-Mode Rejection Ratio vs Frequency Figure 22. Power-Supply Rejection Ratio vs Temperature
Figure 23. Common-Mode Rejection Ratio vs Temperature Figure 24. Open-Loop Gain and Phase vs Frequency
l TEXAS INSTRUMENTS
Time(0.5 s/div)m
5V/div
0V
VIN
VOUT
G= 10-
1kW
10kW
VIN
VOUT
OPA827
5V/div
0.5ms/div
+18V
-18V
37VPP
SineWave
( 18.5V)±
OPA827
Output
Output
Frequency(Hz)
Open-LoopOutputImpedance(Z )
O
10k1k 100M
1000
100
10
1
100k 1M 10M100
CapacitiveLoad(pF)
Overshoot(%)
200100 1000
70
60
50
40
30
20
10
0
0300 400 500 600 700 800 900
100mVOutputStep G=+1
G= 1-
Frequency(Hz)
Gain(dB)
10k1k 100M
50
40
30
20
10
0
-10
-20
-30
100k 1M 10M100
G=+101
G=+11
G=+1
Temperature(°C)
A (mV/V)
OL
1.2
1.0
0.8
0.6
0.4
0.2
0-25-50 25 50 75 100 150125
-75
Temperature(°C)
R =1kW
L
12
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Typical Characteristics (continued)
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
Figure 25. Closed-Loop Gain vs Frequency Figure 26. Open-Loop Gain vs Temperature
Figure 27. Open-Loop Output Impedance vs Frequency Figure 28. Small-Signal Overshoot vs Capacitive Load
Figure 29. No Phase Reversal Figure 30. Positive Overload Recovery
0 100 200 300 400 500 1000600 700 800 900
Time(ns)
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
DFromFinalValue(mV)
0.010
0.008
0.006
0.004
0.002
0
-0.002
-0.004
-0.006
-0.008
-0.010
DFromFinalValue(%)
16-Bit
Settling
( 1/2LSB=±
±0.00075%)
2V/div
Time(0.5 s/div)m
G= 1
C =100pF
-
L
5V/div
Time(0.5 s/div)m
0V
VIN
VOUT
G= 10-
1kW
10kW
VIN
VOUT
OPA827
13
OPA827
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Typical Characteristics (continued)
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
Figure 31. Negative Overload Recovery Figure 32. Small-Signal Step Response
Figure 33. Small-Signal Step Response Figure 34. Large-Signal Step Response
Figure 35. Large-Signal Step Response
10 VPP, CL= 100 pF
Figure 36. Large-Signal Positive Settling Time
l TEXAS INSTRUMENTS
Temperature( C)°
Sourcing
Sinking
I (mA)
SC
80
60
40
20
0
-20
-40
-60
-80
175
-75 -25 25 75 125
0 100 200 300 400 500 1000600 700 800 900
Time(ns)
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
DFromFinalValue(mV)
0.010
0.008
0.006
0.004
0.002
0
-0.002
-0.004
-0.006
-0.008
-0.010
DFromFinalValue(%)
16-Bit
Settling
( 1/2LSB=±
±0.00075%)
0 100 200 300 400 500 1000600 700 800 900
Time(ns)
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
DFromFinalValue(mV)
0.010
0.008
0.006
0.004
0.002
0
-0.002
-0.004
-0.006
-0.008
-0.010
DFromFinalValue(%)
16-Bit
Settling
( 1/2LSB=±
±0.00075%)
0 100 200 300 400 500 1000600 700 800 900
Time(ns)
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
DFromFinalValue(mV)
0.010
0.008
0.006
0.004
0.002
0
-0.002
-0.004
-0.006
-0.008
-0.010
DFromFinalValue(%)
16-Bit
Settling
( 1/2LSB=±
±0.00075%)
14
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Typical Characteristics (continued)
At TA= 25°C, VS= ±18 V, RL= 10 kΩconnected to midsupply, and VCM = VOUT = midsupply, unless otherwise noted.
10 VPP, CL= 10 pF
Figure 37. Large-Signal Positive Settling Time
10 VPP, CL= 100 pF
Figure 38. Large-Signal Negative Settling Time
10 VPP, CL= 10 pF
Figure 39. Large-Signal Negative Settling Time Figure 40. Short-Circuit Current vs Temperature
l TEXAS INSTRUMENTS L} g %T 3* l Capyngmmoqe. Texas \nstrumems \ncurporamd
IN-
IN+
OUT
V+
V-
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7 Detailed Description
7.1 Overview
The OPA827 is a unity-gain stable, precision operational amplifier with very low noise, input bias current, and
input offset voltage. Applications with noisy or high-impedance power supplies require decoupling capacitors
placed close to the device pins. In most cases, 0.1-µF capacitors are adequate.
7.2 Functional Block Diagram
7.3 Feature Description
The OPA827 is a precision JFET amplifier with low input offset voltage, low input offset voltage drift and low
noise. High impedance inputs make the OPA827 ideal for high source impedance applications and
transimpedance applications.
7.3.1 Operating Voltage
The OPA827 series of op amps can be used with single or dual supplies from an operating range of
VS= 8 V (±4 V) and up to VS= 36 V (±18 V). This device does not require symmetrical supplies; it only requires
a minimum supply voltage of 8 V. Supply voltages higher than 40 V (±20 V) can permanently damage the device;
see Absolute Maximum Ratings. Key parameters are specified over the operating temperature range, TA= –40°C
to 125°C. Key parameters that vary over the supply voltage or temperature range are shown in Typical
Characteristics of this data sheet.
7.3.2 Noise Performance
Figure 41 shows the total circuit noise for varying source impedances with the operational amplifier in a unity-
gain configuration (with no feedback resistor network and therefore no additional noise contributions). The
OPA827 (GBW = 22 MHz) and OPA211 (GBW = 80 MHz) are both shown in this example with total circuit noise
calculated. The op amp itself contributes both a voltage noise component and a current noise component. The
voltage noise is commonly modeled as a time-varying component of the offset voltage. The current noise is
modeled as the time-varying component of the input bias current and reacts with the source resistance to create
a voltage component of noise. Therefore, the lowest noise op amp for a given application depends on the source
impedance. For low source impedance, current noise is negligible, and voltage noise generally dominates. The
OPA827 family has both low voltage noise and lower current noise because of the FET input of the op amp. Very
low current noise allows for excellent noise performance with source impedances greater than 10 kΩ.OPA211
has lower voltage noise and higher current noise. The low voltage noise makes the OPA211 a better choice for
low source impedances (less than 2 kΩ). For high source impedance, current noise may dominate, and makes
the OPA827 series amplifier the better choice.
l TEXAS INSTRUMENTS Heslsmr Nmse a" + u" PM + AKTRS
100k 1M
SourceResistance,R (W)
S
100 1k 10k
10k
1k
100
10
1
VotlageNoiseSpectralDensity,EO
RS
EO
E =e
O n n S S
+(i R ) +4kTR
2 2 2
ResistorNoise
OPA211
OPA827
16
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Feature Description (continued)
The equation in Figure 41 shows the calculation of the total circuit noise, with these parameters:
• en= voltage noise
• in= current noise
• RS= source impedance
• k = Boltzmann's constant = 1.38 × 10–23 J/K
• T = temperature in kelvins
For more details on calculating noise, see Basic Noise Calculations.
Figure 41. Noise Performance of the OPA827 and OPA211 in Unity-Gain Buffer Configuration
7.3.3 Basic Noise Calculations
Low-noise circuit design requires careful analysis of all noise sources. External noise sources can dominate in
many cases; consider the effect of source resistance on the overall noise performance of the op amp. Total noise
of the circuit is the root-sum-square combination of all noise components.
The resistive portion of the source impedance produces thermal noise proportional to the square root of the
resistance. This function is plotted in Figure 41. The source impedance is usually fixed; consequently, select the
op amp and the feedback resistors to minimize the respective contributions to the total noise.
Figure 42 illustrates both noninverting (A) and inverting (B) op amp circuit configurations with gain. In circuit
configurations with gain, the feedback network resistors also contribute noise. The current noise of the op amp
reacts with the feedback resistors to create additional noise components.
The feedback resistor values can generally be chosen to make these noise sources negligible.
NOTE
Low-impedance feedback resistors load the output of the amplifier. The equations for total
noise are shown for both configurations shown in both configurations in Figure 42.
l TEXAS INSTRUMENTS A) Noise m Nomnvemng (3am Cunnguranon ~* H : H Cupyngm © 2015 Texas \nslmmems \ncorpuraled
R1
R2
EO
R1
R2
EO
RS
VS
RS
VS
A) Noise in Noninverting Gain Configuration
B) Noise in Inverting Gain Configuration
Noise at the output:
E =
O
2
Where e = Ö
S4kTRS´ = thermal noise of RS
2
1 + R2
R1
e + e
n1 2 n2 S S
+ e + (i R ) + e + (inR )
2 2 2 2 2 2
1 + R2
R1
R2
R1
e = Ö
14kTR1´ = thermal noise of R1
2
1 + R2
R1
e = Ö
2 2
4kTR2= thermal noise of R
Noise at the output:
E =
O
2
Where e = Ö
S4kTRS´ = thermal noise of RS
2
1 + R2
R + R
1 S
e + e
n 1 2 n 2 S
+ e + (i R ) + e
2 2 2 2 2
R2
R + R
1 S
R2
R + R
1 S
e = Ö
14kTR1´ = thermal noise of R1
e = Ö
2 2
4kTR = thermal noise of R
2
For the OPA827 series op amps at 1kHz, e = 4nV/ and i = 2.2fA/ .Ö Ö
nHz Hz
n
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Feature Description (continued)
Figure 42. Noise Calculation in Gain Configurations
7.3.4 Total Harmonic Distortion Measurements
The OPA827 series op amps have excellent distortion characteristics. THD + Noise is below 0.0001%
(G = +1, VO=3VRMS) throughout the audio frequency range, 20 Hz to 20 kHz, with a 600-Ωload (see Figure 3).
The distortion produced by the OPA827 series is below the measurement limit of many commercially available
testers. However, a special test circuit (illustrated in Figure 43) can be used to extend the measurement
capabilities.
Op amp distortion can be considered an internal error source that can be referred to the input. Figure 43 shows a
circuit that causes the op amp distortion to be 101 times greater than that distortion normally produced by the op
amp. The addition of R3to the otherwise standard noninverting amplifier configuration alters the feedback factor
or noise gain of the circuit. The closed-loop gain is unchanged, but the feedback available for error correction is
reduced by a factor of 101, thus extending the resolution by 101.
NOTE
the input signal and load applied to the op amp are the same as with conventional
feedback without R3. The value of R3must be kept small to minimize its effect on the
distortion measurements.
l TEXAS INSTRUMENTS «WM Cupyngm Cc) 2015 Texas msuumems Incorpuraled
R2
OPA827
R1
Signal Gain = 1+
Distortion Gain = 1+
R3V = 3V
O RMS
Generator
Output
Analyzer
Input
Audio Precision
System Two(1)
with PC Controller
R
600W
L
SIGNAL
GAIN
DISTORTION
GAIN R1R2R3
¥
100W
1kW
1kW
10W
11W
1
11
101
101
R2
R1
R2
R II R
1 3
NOTE: (1) Measurement BW = 80kHz.
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Feature Description (continued)
The validity of this technique can be verified by duplicating measurements at high gain and high frequency where
the distortion is within the measurement capability of the test equipment. Measurements for this data sheet were
made with an Audio Precision System Two distortion and noise analyzer, which greatly simplifies such repetitive
measurements. This measurement technique, however, can be performed with manual distortion measurement
instruments.
Figure 43. Distortion Test Circuit
7.3.5 Capacitive Load and Stability
The combination of gain bandwidth product (GBW) and near constant open-loop output impedance (ZO) over
frequency gives the OPA827 the ability to drive large capacitive loads. Figure 44 shows the OPA827 connected
in a buffer configuration (G = +1) while driving a 2.2-µF ceramic capacitor (with an ESR value of approximately 0
Ω). The small overshoot and fast settling time are results of good phase margin. This feature provides superior
performance compared to the competition. Figure 44 and Figure 45 were taken without any resistive load in
parallel to shorten the ringing time.
In Figure 45, the OPA827 is driving a 2.2-µF tantalum capacitor. A relatively small ESR that is internal to the
capacitor additionally improves phase margin and provides an output waveform with no ringing and minimal
overshoot. Figure 45 shows a stable system that can be used in almost any application.
Capacitive load drive depends on the gain and overshoot requirements of the application. Capacitive loads limit
the bandwidth of the amplifier. Increasing the gain enhances the ability of the amplifier to drive greater capacitive
loads (see Figure 28).
7.3.6 Phase-Reversal Protection
The OPA827 family has internal phase-reversal protection. Many FET-input op amps exhibit a phase reversal
when the input is driven beyond its linear common-mode range. This condition is most often encountered in
noninverting circuits when the input is driven beyond the specified common-mode voltage range, causing the
output to reverse into the opposite rail. The input circuitry of the OPA827 prevents phase reversal with excessive
common-mode voltage; instead, the output limits into the appropriate rail (see Figure 29).
l TEXAS INSTRUMENTS 74—mv)
CF
1
4 R UGBW
F
p
( )
(8 CTOTR UGBW
F
p
( )
1+ 1+
20 s/divm
VIN
50mV/div 100mV/div
VOUT
20 s/divm
VIN
50mV/div 100mV/div
VOUT
19
OPA827
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Feature Description (continued)
Figure 44. OPA827 Driving 2.2-µF Ceramic Capacitor
Figure 45. OPA827 Driving 2.2-µF Tantalum Capacitor
7.3.7 Transimpedance Amplifier
The gain bandwidth, low voltage noise, and current noise of the OPA827 series make them ideal wide bandwidth
transimpedance amplifiers in a photo-conductive application. High transimpedance gains with feedback resistors
greater than 100 kΩbenefit from the low input current noise (2.2 fA/Hz) of the JFET input. Low voltage noise is
important because photodiode capacitance causes the effective noise gain in the circuit to increase at high
frequencies. Total input capacitance of the circuit limits the overall gain bandwidth of the amplifier and is
addressed below. Figure 46 shows a photodiode transimpedance application.
7.3.7.1 Key Transimpedance Points
• The total input capacitance (CTOT) consists of the photodiode junction capacitance, and both the common-
mode and differential input capacitance of the operational amplifier.
• The desired transimpedance gain, VOUT = IDRF.
• The Unity Gain Bandwidth Product (UGBW) (22 MHz for the OPA827).
With these three variables set, the feedback capacitor value (CF) can be calculated to ensure stability. CSTRAY is
the parasitic capacitance of the PCB and passive components, which is approximately 0.5 pF.
To ensure 45° phase margin, the minimal amount of feedback capacitance can be calculated using Equation 1.
(1)
l TEXAS INSTRUMENTS m K; a») , Capyngmmoqe. Texas \nstmmems \ncurporamd L} ET T l Capyngmmoqe. Texas \nstrumems \ncurporamd
IN-
IN+
OUT
V+
V-
Copyright © 2016, Texas Instruments Incorporated
RF
1MW
CF
(1)
< 1pF
+VS
-VS
V = I R
OUT D F
CTOT
ID
(1) C is optional to prevent gain peaking.
(2) C is the stray capacitance of R
F
STRAY F
(typically, 2pF for a surface-mount resistor).
CSTRAY
(2)
NOTES:
OPA827
Copyright © 2016, Texas Instruments Incorporated
f-3dB =UGBW
2 R (C )
FTOT
pHz
20
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Feature Description (continued)
Bandwidth (f–3dB) can be calculated using Equation 2.
(2)
These equations result in maximum transimpedance bandwidth. For additional information, refer to Compensate
Transimpedance Amplifiers Intuitively, available for download at www.ti.com.
Figure 46. Transimpedance Amplifier
Figure 47. Equivalent Schematic (Single-Channel)
7.4 Device Functional Modes
The OPA827 has a single functional mode and is operational when the power-supply voltage is greater than 4 V
(±2 V). The maximum power supply voltage for the OPA827 is 36 V (±18 V).
l TEXAS INSTRUMENTS ‘2(‘1‘3'4)‘3425
4
1
C 3 4 2 5
R
Gain R
1
f 1 R R C C
2
S
   
1 3 2 5
22 1 3 4 3 4 2 5
1R R C C
Output s
Input s s C 1R 1 R 1R 1R R C C
 
+
±
OPA140
Output
Input
R1
590
R4
2.94 k
R3
499
C2
39 nF
C5
1 nF
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The OPA827 is a unity-gain stable, operational amplifier with very low noise, input bias current, and input offset
voltage. Applications with noisy or high-impedance power supplies require decoupling capacitors placed close to
the device pins. In most cases, 0.1-µF capacitors are adequate. Designers can easily take advantage of the low-
noise characteristics of JFET amplifiers while also interfacing to modern, single-supply, precision data
converters.
8.2 Typical Application
Figure 48. 25-kHz Low-Pass Filter
8.2.1 Design Requirements
Low-pass filters are commonly employed in signal processing applications to reduce noise and prevent aliasing.
The OPA827 is ideally suited to construct high-speed, high-precision active filters. Figure 48 shows a second-
order, low-pass filter commonly encountered in signal processing applications.
Use the following parameters for this design example:
• Gain = 5 V/V (inverting gain)
• Low-pass cutoff frequency = 25 kHz
• Second-order Chebyshev filter response with 3-dB gain peaking in the pass band
8.2.2 Detailed Design Procedure
The infinite-gain multiple-feedback circuit for a low-pass network function is shown in. Use Equation 3 to
calculate the voltage transfer function.
(3)
This circuit produces a signal inversion. For this circuit, the gain at DC and the low-pass cutoff frequency are
calculated by Equation 4.
(4)
l TEXAS INSTRUMENTS 20 1M
Frequency (Hz)
Gain (db)
-60
-40
-20
0
20
100 1k 10k 100k 1M
22
OPA827
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Typical Application (continued)
Software tools are readily available to simplify filter design. WEBENCH®Filter Designer is a simple, powerful,
and easy-to-use active filter design program. WEBENCH® Filter Designer lets you create optimized filter designs
using a selection of TI operational amplifiers and passive components from TI's vendor partners.
Available as a web based tool from the WEBENCH Design Center, WEBENCH Filter Designer allows you to
design, optimize, and simulate complete multistage active filter solutions within minutes.
8.2.3 Application Curve
Figure 49. OPA827 Second-Order, 25-kHz, Chebyshev, Low-Pass Filter
8.3 System Examples
The OPA827 is well-suited for phase-lock loop (PLL) applications because of the low voltage offset, low noise,
and wide gain bandwidth. Figure 50 illustrates an example of the OPA827 in this application. The first amplifier
(OPA827) provides the loop low-pass, active filter function, while the second amplifier (OPA211) serves as a
scaling amplifier. This second stage amplifies the DC error voltage to the appropriate level before it is applied to
the voltage-controlled oscillator (VCO).
Operational amplifiers used in PLL applications are often required to have low voltage offset. As with other DC
levels generated in the loop, a voltage offset applied to the VCO is interpreted as a phase error. An operational
amplifier with inherently low voltage offset helps reduce this source of error. Also, any noise produced by the
operational amplifiers modulates the voltage applied to the VCO and limits the spectral purity of the oscillator
output. The VCO generates noise-related, random phase variations of its own, but this characteristic becomes
worse when the input voltage source noise is included. This noise appears as random sideband energy that can
limit system performance. The very low flicker noise (1/f) and current noise (In) of the OPA827 help to minimize
the operational amplifier contribution to the phase noise.
l TEXAS INSTRUMENTS 1.30 Cupyngm Cc) 2015 Texas \nsvumenls \ncorpuraled
VOUT =
-V CODE
REF ´
65536
Low-Pass Filter
Scaling
Amplifier
Phase DectorInput Signal
OPA827
OPA211
Current
Source
Divider
Level Adjustment and
Buffer Amplifier
Output Signal
Current
Source
Offset Voltage Generator
(Frequency Adjustment)
VCO
1/N
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System Examples (continued)
Figure 50. PLL Application
8.3.1 OPA827 Used as an I/V Converter
The OPA827 series of operation amplifiers have low current noise and offset voltage that make these devices a
great choice for an I/V converter. DAC8811 is a single-channel, current output, 16-bit digital-to-analog converter
(DAC). The IOUT terminal of the DAC is held at a virtual GND potential by the use of the OPA827 as an external
I/V converter op amp. The R-2R ladder is connected to an external reference input (VREF) that determines the
DAC full-scale current. The external reference voltage can vary in a range of –15 V to 15 V, thus providing
bipolar IOUT current operation. By using the OPA827 as an external I/V converter in conjunction with the internal
DAC8811 RFB resistor, output voltage ranges of –VREF to +VREF can be generated.
When using an external I/V converter and the DAC8811 RFB resistor, the DAC output voltage is given by
Equation 5.
(5)
NOTE
CODE is the digital input into the DAC.
The DAC output impedance as seen looking into the IOUT terminal changes versus code. The low offset voltage
of the OPA827 minimizes the error propagated from the DAC.
For a current-to-voltage design (see Figure 51), the DAC8811 IOUT pin and the inverting node of the OPA827
must be as short as possible and adhere to good PCB layout design. For each code change on the output of the
DAC, there is a step function. If the parasitic capacitance is excessive at the inverting node, then gain peaking is
possible. For circuit stability, two compensation capacitors, C1and C2(4 pF to 20 pF typical) can be added to the
design.
Some applications require full four-quadrant multiplying capabilities or a bipolar output swing. As shown in
Figure 51, the OPA827 is added as a summing amp and has a gain of 2x that widens the output span to 20 V. A
four-quadrant multiplying circuit is implemented by using a 10-V offset of the reference voltage to bias the
OPA827.
l TEXAS INSTRUMENTS Cupynghll Zute Texas \nslrumenls Incorporated
DAC8811
C2
C1
VDD
RFB
IOUT
GND
VREF
+10V
VOUT
-10V V +10V
OUT
£ £
10kW10kW
5kW
OPA827
OPA827
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System Examples (continued)
Figure 51. I/V Converter
9 Power Supply Recommendations
The OPA827 is specified for operation from 4 V to 36 V (±2 V to ±18 V); many specifications apply from –40°C to
125°C. Parameters that can exhibit significant variance with regard to operating voltage or temperature are
presented in the Absolute Maximum Ratings.
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings.
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-
impedance power supplies. For more detailed information on bypass capacitor placement, see Layout.
l TEXAS INSTRUMENTS
N/C
±IN
+IN
V±
V+
OUTPUT
N/C
N/C
VS+
GND
VS±
GND
Ground (GND) plane on another layer
VOUT
VIN
GND
Run the input traces
as far away from
the supply lines
as possible
Use low-ESR, ceramic
bypass capacitor
RF
RG
Place components
close to device and to
each other to reduce
parasitic errors
Use low-ESR,
ceramic bypass
capacitor
25
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10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and op amp
itself. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power
sources local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-
supply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground
planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically
separate digital and analog grounds paying attention to the flow of the ground current.
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much
better as opposed to in parallel with the noisy trace.
• Place the external components as close to the device as possible. As illustrated in Figure 52, keeping RF
and RG close to the inverting input minimizes parasitic capacitance.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly
reduce leakage currents from nearby traces that are at different potentials.
• For best performance, TI recommends cleaning the PCB following board assembly.
• Any precision integrated circuit may experience performance shifts due to moisture ingress into the
plastic package. Following any aqueous PCB cleaning process, TI recommends baking the PCB
assembly to remove moisture introduced into the device packaging during the cleaning process. A low
temperature, post cleaning bake at 85°C for 30 minutes is sufficient for most circumstances.
10.2 Layout Example
Figure 52. Operational Amplifier Board Layout for Noninverting Configuration
l TEXAS INSTRUMENTS
26
OPA827
SBOS376I –NOVEMBER 2006–REVISED JULY 2016
www.ti.com
Product Folder Links: OPA827
Submit Documentation Feedback Copyright © 2006–2016, Texas Instruments Incorporated
11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.1.2 Development Support
For development support see the following:
•WEBENCH® Filter Designer
•OPA211
•DAC8811
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
Compensate Transimpedance Amplifiers Intuitively (SBOA055)
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.7 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
l TEXAS INSTRUMENTS
27
OPA827
www.ti.com
SBOS376I –NOVEMBER 2006–REVISED JULY 2016
Product Folder Links: OPA827
Submit Documentation FeedbackCopyright © 2006–2016, Texas Instruments Incorporated
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS Samples Samples Samples Samples Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
OPA827AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA
827
A
OPA827AIDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA
827
A
OPA827AIDGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR -40 to 125 NSP
OPA827AIDGKT ACTIVE VSSOP DGK 8 250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR -40 to 125 NSP
OPA827AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA
827
A
OPA827AIDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA
827
A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS ‘3‘ V.'
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
TAPE AND REEL INFORMATION
Reel Width (W1)
REEL DIMENSIONS
A0
B0
K0
W
Dimension designed to accommodate the component length
Dimension designed to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
Dimension designed to accommodate the component width
TAPE DIMENSIONS
K0 P1
B0 W
A0
Cavity
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Pocket Quadrants
Sprocket Holes
Q1 Q1Q2 Q2
Q3 Q3Q4 Q4 User Direction of Feed
P1
Reel
Diameter
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
OPA827AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
W
L
H
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
OPA827AIDR SOIC D 8 2500 356.0 356.0 35.0
Pack Materials-Page 2
I TEXAS INSTRUMENTS __________________ ‘(I(I“""""""""
PACKAGE MATERIALS INFORMATION
www.ti.com 3-Jun-2022
TUBE
L - Tube length
T - Tube
height
W - Tube
width
B - Alignment groove width
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
OPA827AID D SOIC 8 75 506.6 8 3940 4.32
OPA827AIDG4 D SOIC 8 75 506.6 8 3940 4.32
Pack Materials-Page 3
‘J
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
Yl“‘+
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
MECHANICAL DATA DGK (S—PDSO—GS) PLASTIC SMALL—OUTLINE PACKAGE m1 WW“: {[0 VAX % j 3,010 I 4073329/E 05/06 NO'ES' A AH imec' dimensmrs c'e m m'hmeiers 5 Th: drawing is enmec: :e change within: nciice. Body icnqth Coos mi mciucc maid Hash, protrusions or we tms Mom 'iush, aromons, ov qaw burrs shaH m exceed 015 per end b Budy mm does not wcude inierieud flasi‘ inieriead ‘iush s'mii 'mi exceed 050 pe' we : FuHs wiUHn JEDEC M0487 quulion AA, except 'vievieud ricer INSTRUMENTS w. (i. com
LAND PATTERN DATA DGK (37PD30708) PLASTIC SMALL OUTLINE PACKAGE Exampie Board Layout Exampie stencii Openings Based on a stencii thickness of .127mm L005inch), (See Nate 0) (,0 65) TYP ‘ Li 5 LLLLL L, pm ,,,,, PKG PKG "\ i i 4 — ----- i — ----- i D DU D i i ’ PKG PKG Q G . / Exampie , Non Soldermusk Defined Pad i , , —\ L A ~/ ‘\ Example \ Spider Musk Opening / +1 1‘(0,45) ‘ (See Note E) t 1 (1,45) < ‘="" \pud="" geometry="" ’="" (see="" note="" c)="" \="" +ii¢="" (0,05)="" \="" ah="" around="" «="" ,="" \="" e="" ’="" i="" ‘\-=""> muss/A 11/13 NOTES: A. Ali iinear dimensions are in miilimeters. a. This drawing is subject ta change without natiee, C, Publication |PCi7351 is recommended ior alternate designsu a. Laser cutting apertures with trapezoidui walls and aisa rounding corners w‘iH ofler eetter paste veiease. Customers snouid Contact their board ussembiy site for stencii design recommendations. Rater tn IFS—7525 for other slenci'i recummendutions. Customers should Contact their tmurd fabrication site for solder musk tolerances between and around signal pads. .r'I {I TEXAS INSTRUMENTS www.li.com
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