Datenblatt für IXKK85N60C von IXYS

L'I IXYS
© 2010 IXYS All rights reserved 1 - 4
20100315c
IXKK 85N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID100 30 36 mW
VGS(th) VDS = VGS; ID = 5.4 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C
50
500
µA
µA
IGSS VGS = ± 20 V; VDS = 0 V ±200 nA
Ciss
Coss
Crss
VGS = 0 V; VDS = 25 V
f = 1 MHz
13.6
4.4
290
nF
nF
pF
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 350 V; ID = 85 A
500
50
240
640 nC
nC
nC
td(on)
tr
td(off)
tf
VGS = 13 V; VDS = 380 V
ID = 85 A; RG = 1.0 Ω
20
27
110
10
ns
ns
ns
ns
RthJC 0.18 K/W
Pulse test, t < 300 µs, duty cycle d < 2%
MOSFET
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C 600 V
VGS ± 20 V
ID25
ID100
TC = 25°C
TC = 100°C
85
55
A
A
EAS
EAR
single pulse ID = 10 A; TC = 25°C
repetitive ID = 20 A; TC = 25°C
1800
1
mJ
mJ
dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns
D
G
S
VDSS = 600 V
ID25 = 85 A
RDS(on) max = 36 mΩ
CoolMOS™ 1) Power MOSFET
Low RDSon, high VDSS
Superjunction MOSFET
Features
• 3rd generation CoolMOS™ 1) power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
TO-264
G
D
Stab
E72873
L'I IXYS Back Slde RUckseite
© 2010 IXYS All rights reserved 2 - 4
20100315c
IXKK 85N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
ISVGS = 0 V 85 A
ISM 250 A
VSD IF = 85 A; VGS = 0 V 1.2 V
trr
QRM
IRM
IF = 85 A; -diF/dt = 200 A/µs; VR = 350 V
580
46
140
ns
µC
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating -55...+150
-55...+150
°C
°C
Mdmounting torque 0.8 ... 1.2 Nm
Symbol Conditions Characteristic Values
min. typ. max.
RthCH with heatsink compound 0.15 K/W
Weight 10 g
TO-264 Outline
SYM INCHES MILLIMETERS
MIN MAX MIN MAX
A
A1
.185
.102
.037
.087
.110
.017
1.007
.209
.118
.055
.102
.126
.029
1.047
4.70
2.59
0.94
2.21
2.79
0.43
25.58
5.31
3.00
1.40
2.59
3.20
0.74
26.59
NOTE: 1. This drawing meets all dimensions
b
b1
b2
C
D
e
2.44
5.10
BSC
2.24
4.90
5.46
.096
.201
BSC.215
E
L2
.122
.240
.138
.256
3.10
6.10
3.51
6.50
P
Q
L3
20.2919.30.799.760
.075
.000
.083
.004
1.90
0.00
2.10
0.10
.155 .187 3.94 4.75
R
.193
.088
6.43
.253
.243 6.17
S
Q1
8.798.38.346.330
R1
2.362.16.093.085
requirement of JEDEC outlines
L
L1
TO-264AAexcept L, L1, L2, L3.
2. All metal surface are solder plated
except trimmed area.
:I IXYS
© 2010 IXYS All rights reserved 3 - 4
20100315c
IXKK 85N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
40
80
120
160
200
240
280
320
360
0 2 4 6 8 10 12 14 16 18
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
t
p = 300µs
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
90
100
0 1 2 3 4 5 6 7
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
5V
4V
4.5V
t
p = 300µs
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
6V
5V
4V
4.5V
t
p = 300µs
Fig. 4. R
DS(on)
Normalized to I
D100
V
alue
vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 60A
I
D
= 30A
V
GS
= 10V
t
p = 300µs
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
100
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
I
D100
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
4
0 40 80 120 160 200 240 280 320 360
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
t
p = 300µs
© 2010 IXYS All rights reserved 4 - 4
20100315c
IXKK 85N60C
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 11. Capacitance
10
100
1000
10000
100000
0 10 20 30 40 50 60 70 80 90 100
V
DS
- Volts
Capacitance - p
F
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 60 120 180 240 300 360 420 480 540
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 350V
I
D
= 80A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
30
60
90
120
150
180
210
240
2 2.5 3 3.5 4 4.5 5 5.5 6
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 12. Maximum Transient Therm al
Resistance
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 30 60 90 120 150 180 210 240
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
IXYS A Lillelluse Technumgy
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