Datenblatt für IPB60R180P7 von Infineon Technologies

_Av«nm n Table 1 Key Performance Parameters
1
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
1
2
3
tab
D²PAK
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
 commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya
 lowRDS(on)*A(below1Ohm*mm²)
•Fullyqualifiedacc.JEDECforIndustrialApplications
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
 acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
 losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
 smallerfootprintandhighermanufacturingqualitydueto>2kVESD
 protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 180 mΩ
Qg,typ 25 nC
ID,pulse 53 A
Eoss @ 400V 2.9 µJ
Body diode diF/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPB60R180P7 PG-TO 263-3 60R180P7 see Appendix A
(imeon
2
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(imeon Table 2 Maximum ratings
3
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
18
11 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 53 A TC=25°C
Avalanche energy, single pulse EAS - - 56 mJ ID=4.0A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.28 mJ ID=4.0A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 4.0 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 72 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current IS- - 18 A TC=25°C
Diode pulse current2) IS,pulse - - 53 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=18A,Tj=25°C
see table 8
Maximum diode commutation speed diF/dt - - 900 A/µsVDS=0...400V,ISD<=18A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
(imeon Table 3 Thermal characteristics
4
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.74 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C reflow MSL1
(Iniineon Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate char e characteristics
5
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.28mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.145
0.34
0.180
-ΩVGS=10V,ID=5.6A,Tj=25°C
VGS=10V,ID=5.6A,Tj=150°C
Gate resistance RG- 11 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1081 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 19 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 36 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 381 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 14 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=10.0Ω;seetable9
Rise time tr- 12 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=10.0Ω;seetable9
Turn-off delay time td(off) - 85 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=10.0Ω;seetable9
Fall time tf- 8 - ns VDD=400V,VGS=13V,ID=5.6A,
RG=10.0Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 6 - nC VDD=400V,ID=5.6A,VGS=0to10V
Gate to drain charge Qgd - 8 - nC VDD=400V,ID=5.6A,VGS=0to10V
Gate charge total Qg- 25 - nC VDD=400V,ID=5.6A,VGS=0to10V
Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=5.6A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
(imeon Table 7 Reverse diode characteristics
6
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=5.6A,Tj=25°C
Reverse recovery time trr - 175 - ns VR=400V,IF=2A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 1.3 - µC VR=400V,IF=2A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 15 - A VR=400V,IF=2A,diF/dt=100A/µs;
see table 8
(ifileon
7
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
20
40
60
80
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-4
10-3
10-2
10-1
100
101
102
10 µs
1 µs
100 µs
1 ms
DC
10 ms
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
DC
10 ms
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.02
0.1
0.05
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
(ifileon [Q
8
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
60
70
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30 40
0.300
0.350
0.400
0.450
0.500
0.550
0.600
0.650
0.700
7 V
20 V
6 V
10 V
6.5 V
5.5 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[normalized]
-50 -25 0 25 50 75 100 125 150
0.000
0.500
1.000
1.500
2.000
2.500
3.000
RDS(on)=f(Tj);ID=5.6A;VGS=10V
(ifileon
9
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
20
40
60
80
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25 30
0
2
4
6
8
10
12
120 V 400 V
VGS=f(Qgate);ID=5.6Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
10
20
30
40
50
60
EAS=f(Tj);ID=4.0A;VDD=50V
(ifileon
10
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-50 -25 0 25 50 75 100 125 150
540
550
560
570
580
590
600
610
620
630
640
650
660
670
680
690
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
1
2
3
4
Eoss=f(VDS)
(imeon
11
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
inflneon D1 L1 1 1 ‘ a E1 i‘i1‘ >21 (2 \I F1 FOOTPRWT F2 F3 1 E mu MIUJMETERS INCHES MW MAX MIN MAX A A an 4 57 D159 u 150 Al 0 00 D 25 D 000 0 010 b 065 085 am am: DOCUMENT NO. b2 0 95 1 15 0 D37 0 045 235000933211 c 0 33 D 65 0 D13 0 026 c2 «,0 1.40 n ms 0 055 SCALE “’ n a 51 m n m n 377 D1 71B 790 DZED 0311 a sac 1031 was owe a 5- E1 5 so a so u 256 u 339 I ,5 e 2 so u loo 7 5mm 51 5 GB 0200 N 2 2 EUROPEAN PROJECTION H 14 61 15 88 D 575 0 625 L 2.29 3,00 0 090 0 ’118 L1 D 70 1.60 D 028 0 063 i L2 1 DD 1 78 B 039 O 070 n 15 m 1a 7a n 517 0 mm 72 2 an 9.50 a sea v 374 ISSUE DATE r3 m: . 70 0177 0155 30,35,200, F4 1070 1090 0421 0429 r5 3 as a as u m o 152 REVISION F5 I 25 1 A5 0 049 o 051 E"
12
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO263-3,dimensionsinmm/inches
Infineon :www.infineon.com :www.infineon.com : www infineon com www 'nfineo com
13
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSP7Webpage:www.infineon.com
•IFXCoolMOSP7applicationnote:www.infineon.com
•IFXCoolMOSP7simulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
(imeon
14
600VCoolMOSªP7PowerTransistor
IPB60R180P7
Rev.2.1,2018-05-15Final Data Sheet
RevisionHistory
IPB60R180P7
Revision:2018-05-15,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-09-29 Release of final version
2.1 2018-05-15 Nomenclature of product qualification grade was changed
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