Datenblatt für V6KL45DU von Vishay General Semiconductor - Diodes Division

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V6KL45DU
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-18 1Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 1.5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1) With infinite heatsink
(2) Free air, mounted on recommended pad area
(3) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RTJA
PRIMARY CHARACTERISTICS
IF(AV) 2 x 3 A
VRRM 45 V
IFSM 80 A
VF at IF = 3 A (TA = 125 °C) 0.36 V
TJ max. 150 °C
Package FlatPAK 5 x 6
Circuit configuration Separated cathode
4
3
1
2
5
6
8
7
3
1
2
5
6
8
7
1 and / or 2
3 and / or 4
7, 8
5, 6
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V6KL45DU UNIT
Device marking code V6L45D
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum DC forward current per device IF(AV) (1) 6A
IF(AV) (2) 4.4 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 80 A
Operating junction and storage temperature range TJ (3), TSTG -40 to +150 °C
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEumgemushauom www.v\shay.com/doc?91000
V6KL45DU
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-18 2Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width d 5 ms
Notes
(1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RTJA
(2) Free air, mounted on recommended copper pad area; thermal resistance RTJA - junction-to-ambient
(3) Mounted on infinite heat sink; thermal resistance RTJM - junction-to-mount
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 1.5 A TA = 25 °C
VF (1)
0.41 -
V
IF = 3 A 0.46 0.54
IF = 1.5 A TA = 125 °C 0.30 -
IF = 3 A 0.36 0.44
Reverse current per diode VR = 45 V TA = 25 °C IR (2) -0.45
mA
TA = 125 °C 5 15
Typical junction capacitance per diode 4.0 V, 1 MHz CJ550 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V6KL45DU UNIT
Typical thermal resistance per device RTJA (1)(2) 80 °C/W
RTJM (3) 3.2
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V6KL45DU-M3/H 0.10 H 1500 7" diameter plastic tape and reel
V6KL45DU-M3/I 0.10 I 6000 13" diameter plastic tape and reel
V6KL45DUHM3/H (1) 0.10 H 1500 7" diameter plastic tape and reel
V6KL45DUHM3/I (1) 0.10 I 6000 13" diameter plastic tape and reel
VISHAY. lent Thermal Impedance (" DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEumgemushauom www.v\shay.com/doc?91000
V6KL45DU
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-18 3Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0 25 50 75 100 125 150
Average Forward Rectified Current (A)
Mount Temperature (°C)
TMmeasured at cathode
terminal mount typical values
RthJM
= 3.2 °C/W
RthJA
= 80 °C/W
0.0
0.3
0.6
0.9
1.2
1.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J= 150 °C
TJ= 25 °C
TJ= 125 °C
TJ= -40 °C
TJ= 100 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TJ= 150 °C
TJ= 125 °
C
TJ= 100 °C
TJ= 25 °C
TJ= -40 °C
1
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction-to-ambient
VISHAY. 4T G} is“ 4 if i 7: gggj 3 «C i 3 mm 7 EH;M DwodesAmencas©wshay£om DwodesAswa©wshay£om DwodesEumgemushauom www.v\shay.com/doc?91000
V6KL45DU
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-18 4Document Number: 87534
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Notes
• Dimensioning and tolerancing per ASME Y14.5-2009
• Dimensions D1 and E1 do not include mold flash or gate burrs
• Dimension (XX) means reference only
DIM. INCHES MILLIMETERS
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.035 0.039 0.043 0.89 0.99 1.09
(a) - 0.006 - - 0.15 -
b 0.013 0.017 0.020 0.32 0.43 0.52
b1 0.013 0.017 0.020 0.32 0.43 0.52
c 0.008 - 0.014 0.20 - 0.35
D 0.197 0.203 0.209 5.00 5.15 5.30
D1 0.189 0.193 0.197 4.80 4.90 5.00
D2 0.154 0.161 0.169 3.90 4.10 4.30
D3 0.020 0.024 0.031 0.50 0.60 0.80
D4 0.063 0.069 0.075 1.60 1.75 1.90
(d1) - 0.016 - - 0.40 -
(d2) - 0.005 - - 0.125 -
E 0.238 0.244 0.250 6.05 6.20 6.35
E1 0.228 0.232 0.236 5.80 5.90 6.00
E2 0.157 0.165 0.173 4.00 4.20 4.40
(E3) - 0.144 - - 3.65 -
e 0.050 BSC 1.27 BSC
(K) 0.039 - - 1.00 - -
L1 0.019 - 0.043 0.48 - 1.10
L2 0.012 - 0.031 0.30 - 0.80
M 0.128 0.138 0.148 3.25 3.50 3.75
40° - 10° 0° - 10°
Top View
Bottom View
(Dual Pad)
PCB Footprint
(Dual Pad)
Side View
D
D1 6 x e
4 x L24 x L1 (E3)
2 x b1
8 x b
2 x D4
0.030 (0.75)
0.180 (4.56)
0.219 (5.55)
0.050 (1.27)
0.030 (0.75)
0.082 (2.08)
(2 x d2)
0.022 (0.56)
0.191 (4.84)
0.039 (1.00) 0.055 (1.40)
0.259 (6.59)
D3
D2
(d1)
M
E2
(K)
8765
8765
12
34
1234
F1F2 F1 F2
E
E1
(8 x a)
(8 x Θ)
c
A
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