Datenblatt für NSS1C200LT1G von onsemi

0N Semiconductor® www.0nsemi.com SE
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 6
1Publication Order Number:
NSS1C200L/D
NSS1C200L, NSV1C200L
Low VCE(sat) Transistor,
PNP, 100 V, 2.0 A
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO −100 Vdc
Collector-Base Voltage VCBO −140 Vdc
Emitter-Base Voltage VEBO −7.0 Vdc
Collector Current − Continuous IC−2.0 A
Collector Current − Peak ICM −3.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1) 490
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1) 255 °C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2) 710
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2) 176 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
Device Package Shipping†
ORDERING INFORMATION
NSS1C200LT1G,
NSV1C200LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
3
2
1
www.onsemi.com
−100 VOLTS, 2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VL MG
G
VL = Specific Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Nme 2 Note 1 www.cnsemi.com
NSS1C200L, NSV1C200L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−100
Vdc
Collector−Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−140
Vdc
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−7.0
Vdc
Collector Cutoff Current
(VCB = −140 Vdc, IE = 0)
ICBO
−100
nAdc
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
−50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
150
120
80
50
240 360
Collector−Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.01 A)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
−0.040
−0.080
−0.115
−0.250
V
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.100 A)
VBE(sat)
−0.950
V
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
−0.850
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
120
MHz
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Cibo 200 pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 22 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
0.60
0.50
0.40
0.30
0.20
0.10
0
0 20 16040 60 14012010080
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
PD, POWER DISSIPATION (W)
Note 2
Note 1
NSS1C200L, NSV1C200L
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3
0
100
200
300
400
500
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
DC, CURRENT GAIN
150°C
25°C
−55°C
VCE = 2 V
0
100
200
300
400
500
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
DC, CURRENT GAIN
150°C
25°C
−55°C
VCE = 4 V
0.01
0.1
1
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
150°C
−55°C
25°C
IC/IB = 10
0.01
0.1
1
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
IC/IB = 50
25°C
150°C
−55°C
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
VBE(sat), BASE−EMITTER VOLTAGE (V)
−55°C
150°C
25°C
IC/IB = 10
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
VBE(sat), BASE−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
IC/IB = 50
−55°C
150°C
25°C
‘ ‘ : 25: hm :1 MHz 7 Thermal lelt
NSS1C200L, NSV1C200L
www.onsemi.com
4
0
0.2
0.4
0.6
0.8
1.0
0.001 0.01 0.1 1 10
VBE(on), BASE−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
VCE = 2 V
−55°C
150°C
25°C
0.01
0.10
1.00
1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+0
0
IC = 0.1 A
0.5 A
1 A
2 A
3 A
TJ = 25°C
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
IB, BASE CURRENT (A)
Figure 9. Collector Saturation Region
0
100
200
300
400
012345678
CIBO, INPUT CAPACITANCE (pF)
VCE, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
TJ = 25°C
fTEST = 1 MHz
0
10
20
30
40
50
60
70
80
0 102030405060708090100
TJ = 25°C
fTEST = 1 MHz
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
COBO, OUTPUT CAPACITANCE (pF)
0
20
40
60
80
100
120
140
0.001 0.01 0.1 1
fTau, CURRENT−GAIN BANDWIDTH PRODUCT
(MHz)
IC, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
TJ = 25°C
fTEST = 1 MHz
VCE = 10 V
0.01
0.1
1
10
0.1 1 10 100
1 ms
10 ms
100 ms
Thermal Limit
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13.
IC, COLLECTOR CURRENT (A)
NSS1C200L, NSV1C200L
www.onsemi.com
5
t, PULSE TIME (s)
Figure 14. Transient Thermal Resistnce
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
1000
100
10
1
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
R(t), (°C/W)
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SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−23 (TO−236)
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