Datenblatt für MUN531335DW1 von onsemi

of two resistors: a series base t istor and a or. The BRT eliminales these individual s by integrating Ihem into a single device. The use of u BRT can reduce both system cost and board space. Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix tor Automotive and Other Applications Requiring Unit] e Site and Control Change Requiremenls: AECteOl Qualified and PPAF Capable These Devices lu'e PbrFree, Halogen Free/BFR Free and are RUHS 0N Semiconductor® = 25°C, common lan‘ (PNP), unless otherwise notedl Symbol Max Unit ColleCtapBase Voltage V530 50 voc CollectoreEmltier Voltage VCEO 50 voc Collector Current , Continuous lo tau rnAdc lnpui Forward Voltage Viwwd, l2 voc lnpui Reverse Voltage Viwev, 5 voc S = 25°C, common lor 02 (NPN), unless otherwise notedl Symbol Max Unit CollectoveBase Voltage V530 50 voc Collectoermltter Voltage VCEO 50 voc Collector Current , Continuous lo tau rnAdc Vthtwdt 40 We Vthvevl ‘0 WC Stresses exceedlng those llsted in the Maxlmum Ratings table may damage the ll’nl's are exceeded. devlce tunctionality should not be assumed. damage may occur and rellablllly may be attected. s lndustnes. LLC Zflls I November, 2M6 — Rev. 2 Pu
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 2 1Publication Order Number:
MUN531335DW1/D
MUN531335DW1
Complementary Bias
Resistor Transistors
NPN - R1=47 kW, R2=47 kW
PNP - R1=2.2 kW, R2=47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
•These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 (PNP), unless otherwise noted)
Rating Symbol Max Unit
Collector−Base Voltage VCBO 50 Vdc
Collector−Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 12 Vdc
Input Reverse Voltage VIN(rev) 5 Vdc
MAXIMUM RATINGS
(TA = 25°C, common for Q2 (NPN), unless otherwise noted)
Rating Symbol Max Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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MARKING DIAGRAM
PIN CONNECTIONS
AJ MG
G
1
6
AJ = Specific Device Code
M = Date Code*
G= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SOT−363
CASE 419B
Q1
Q2
(1)(2)(3)
(6)(5)(4)
R1
R2
R2
R1
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSVMUN531335DW1T1G SOT−363
(Pb−Free)
3000 / Tape
& Reel
NSVMUN531335DW1T3G SOT−363
(Pb−Free)
10000 /
Tape & Ree
l
MUN531335DW1
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN531335DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 670
490
°C/W
MUN531335DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
(Note 2)
RqJA 493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL 188
208
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 ×1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
MUN531335DW1
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 (PNP))
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0) IEBO − − 0.2 mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V) hFE 80 140 −
Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA) VCE(sat) − − 0.25 Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA) Vi(off) − 0.6 − Vdc
Input Voltage (on)
(VCE = 0.2 V, IC = 5.0 mA) Vi(on) − 0.8 − Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)VOL − − 0.2 Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)VOH 4.9 − − Vdc
Input Resistor R1 1.5 2.2 2.9 kW
Resistor Ratio R1/R20.038 0.047 0.056
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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4
ELECTRICAL CHARACTERISTICS (TA=25°C, common for Q2 (NPN))
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB =50V, I
E=0) ICBO − − 100 nAdc
Collector-Emitter Cutoff Current
(VCE =50V, I
B=0) ICEO − − 500 nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC=0) IEBO − − 0.1 mAdc
Collector-Base Breakdown Voltage
(IC=10mA, IE=0) V(BR)CBO 50 − − Vdc
Collector-Emitter Breakdown Voltage (Note 5)
(IC= 2.0 mA, IB=0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC= 5.0 mA, VCE =10V) hFE 80 140 −
Collector-Emitter Saturation Voltage (Note 5)
(IC= 10 mA, IB= 0.3 mA) VCE(sat) − − 0.25 V
Input Voltage (Off)
(VCE = 5.0 V, IC= 100 mA) Vi(off) − 1.2 − Vdc
Input Voltage (On)
(VCE = 0.2 V, IC= 3.0 mA) Vi(on) − 1.9 − Vdc
Output Voltage (On)
(VCC = 5.0 V, VB= 3.5 V, RL= 1.0 kW)VOL − − 0.2 Vdc
Output Voltage (Off)
(VCC = 5.0 V, VB= 0.5 V, RL= 1.0 kW)VOH 4.9 − − Vdc
Input Resistor R1 32.9 47 61.1 kW
Resistor Ratio R1/R20.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
1.0 ×1.0 Inch Pad
350
400
MUN531335DW1
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5
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
f = 10 kHz
IE = 0 A
TA = 25°C
7
010 20304050
150°C
25°C
−55°C
Figure 2. VCE(sat) vs. ICFigure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (V)VR, REVERSE BIAS VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
10
0
101
1000
10
1
0.01
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
100
43210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (V)
0.01
0.1
30
100
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
25°C
150°C−55°C
6
5
4
3
2
1
0
25°C
−55°C
150°C
25°C
−55°C
150°C
10
MUN531335DW1
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6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
Figure 7. VCE(sat) vs. IC
024681
0
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (V)
TA= −25°C
75°C
25°C
Figure 8. DC Current Gain
Figure 9. Output Capacitance
100
10
1
0.1 010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10 1 100
25°C
75°C
50
010203040
3.2
2.8
1.2
0.8
0.4
0
VR, REVERSE VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE = 10 V
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA= −25°C
TA= −25°C
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
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MUN531335DW1
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7
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20 0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
P
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