Datenblatt für IPD50R399CP von Infineon Technologies

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IPD50R399CP
CoolMOSTM Power Transistor
Features
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant, Halogen free
• Fully qualified according to JEDEC1) for Industrial Applications
CoolMOS CP is designed for:
• Hard and softswitching SMPS topologies
• DCM PFC for Lamp Ballast
• PWM for Lamp Ballast & PDP and LCD TV
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse
EAS ID=3.3 A, VDD=50 V 215 mJ
Avalanche energy, repetitive tAR
2),3) EAR ID=3.3 A, VDD=50 V
Avalanche current, repetitive tAR
2),3) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0...400 V V/ns
Gate source voltage
VGS static V
AC (f>1 Hz)
Power dissipation
Ptot TC=25 °C W
Operating and storage temperature
Tj, Tstg °C
83
-55 ... 150
0.33
3.3
50
±20
Value
9
6
20
±30
VDS @Tjmax
550
V
RDS(on),max
0.399
W
17
nC
Product Summary
Type
Package
Marking
IPD50R399CP
PG-TO252
5R399P
PG-TO252
Rev. 2.3 page 1 2020-05-10
@neonl
IPD50R399CP
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current
ISA
Diode pulse current2) IS,pulse 20
Reverse diode dv/dt4) dv/dt15 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 1.5 K/W
RthJA leaded - - 62
Soldering temperature,
reflowsoldering
Tsold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=250 µA 500 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=0.33 mA 2.5 33.5
Zero gate voltage drain current
IDSS
VDS=500 V, VGS=0 V,
Tj=25 °C
- - 1 µA
VDS=500 V, VGS=0 V,
Tj=150 °C
-10 -
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance
RDS(on)
VGS=10 V, ID=4.9 A,
Tj=25 °C
-0.36 0.399 W
VGS=10 V, ID=4.9 A,
Tj=150 °C
-0.90 -
Gate resistance
RGf=1 MHz, open drain -2.2 -W
Value
TC=25 °C
4.9
Values
Thermal resistance, junction -
ambient
Rev. 2.3 page 2 2020-05-10
@neonl Reverse Diode connection. PCB withoui biown air. am is a fixed capamiance that gives Ine same charging lime as 055 wniie D5 is using from 0 lo 80% 055
IPD50R399CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -890 -pF
Output capacitance
Coss -40 -
Effective output capacitance, energy
related6)
Co(er) -38 -
Effective output capacitance, time
related7)
Co(tr) -81 -
Turn-on delay time
td(on) -35 -ns
Rise time
tr-14 -
Turn-off delay time
td(off) -80 -
Fall time
tf-14 -
Gate Charge Characteristics
Gate to source charge
Qgs - 4 - nC
Gate to drain charge
Qgd - 6 -
Gate charge total
Qg-17 23
Gate plateau voltage
Vplateau -5.2 - V
Reverse Diode
Diode forward voltage
VSD
VGS=0 V, IF=4.9 A,
Tj=25 °C
-0.9 1.2 V
Reverse recovery time
trr -260 -ns
Reverse recovery charge
Qrr -1.9 -µC
Peak reverse recovery current
Irrm -12.2 - A
1) J-STD20 and JESD22
2) Pulse width tp limited by Tj,max
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
7) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
4) ISD≤ID, di/dt≤400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low and high side switch
VR=400 V, IF=IS,
diF/dt=100 A/µs
5) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70mm thick) copper area for drain
connection. PCB without blown air.
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=10 V, ID=4.9 A,
RG,ext=35.1 W
VDD=400 V, ID=4.9 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 400 V
Rev. 2.3 page 3 2020-05-10
IPD50R399CP
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
Z(thJC)=f(tp); ID=f(VDS); Tj=25 °C
parameter: D=t p/Tparameter: VGS
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150 175
Ptot [W]
TC [°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
100
101
102
103
10-1
100
101
102
ID [A]
VDS [V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
10
20
30
40
50
60
0 5 10 15 20
ID [A]
VDS [V]
limited by on-state
resistance
Rev. 2.3 page 4 2020-05-10
@fi nnnnn
IPD50R399CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=4.9 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
typ
98 %
0
0.1
0.2
0.3
0.4
0.5
0.6
-60 -20 20 60 100 140 180
RDS(on) [W]
Tj [°C]
25 °C
150 °C
0
5
10
15
20
25
30
0 2 4 6 8 10
ID [A]
VGS [V]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
10
20
30
40
0 5 10 15 20 25
ID [A]
VDS [V]
5.5 V
6 V
6.5 V
7 V
10 V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 5 10 15 20 25 30 35
RDS(on) [W]
ID [A]
Rev. 2.3 page 5 2020-05-10
@fi nnnnn
IPD50R399CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=4.9 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=3.3 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-1
100
101
102
0 0.5 1 1.5 2
IF [A]
VSD [V]
440
460
480
500
520
540
560
580
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
0
50
100
150
200
250
300
350
400
450
25 75 125 175
EAS [mJ]
Tj [°C]
100 V
400 V
0
2
4
6
8
10
0 5 10 15 20
VGS [V]
Qgate [nC]
Rev. 2.3 page 6 2020-05-10
@neon
IPD50R399CP
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(V DS)
0
1
2
3
4
5
0 100 200 300 400 500
Eoss [µJ]
VDS [V]
Ciss
Coss
Crss
100
101
102
103
104
0 100 200 300 400 500
C [pF]
VDS [V]
Rev. 2.3 page 7 2020-05-10
0’: @Ineon "Q; 10% [mm m” /dI 90% [um
IPD50R399CP
Definition of diode switching characteristics
Rev. 2.3 page 8 2020-05-10
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IPD50R399CP
PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21: Outline
Rev. 2.3 page 9 2020-05-10
1
REVISION
07
01.04.2020
ISSUE DATE
EUROPEAN PROJECTION
0
SCALE:
2mm
DOCUMENT NO.
Z8B00003328
MILLIMETERS
4.57
2.29
L4
D
N
H
E1
e1
e
E
D1
L3
1.18
0.51
0.89
5.02
9.40
6.35
4.32
5.97
3
b3
A
DIMENSION
b2
c
b
c2
A1
4,95
MIN.
2.16
0.64
0.46
0.65
0.40
0.00
1.78
1.02
5.50
5.84
6.22
6.73
1.27
10.48
5.50
MAX.
2.41
0.15
1.15
0.61
0.89
0.98
L
10:1
@
10
500VCP
IPD50R399CP
Rev.2.3,2020-05-26
RevisionHistory
IPD50R399CP
Revision:2020-05-26,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2020-05-26 Update package outline
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