Datenblatt für MIC5021 von Microchip Technology

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‘ MIC§CHIP M|C5021 E

 2016 Microchip Technology Inc. DS20005677A-page 1

MIC5021

Features

• 12V to 36V Operation

• 550 ns Rise/Fall Time Driving 2000 pF

• TTL-Compatible Input with Internal Pull-Down

Resistor

• Overcurrent Limit

• Gate-to-Source Protection

• Internal Charge Pump

• 100 kHz Operation Guaranteed Over Full Tem-

perature and Operating Voltage Range

• Compatible with Current-Sensing MOSFETs

• Current-Source Drive Reduces EMI

Applications

• Lamp Control

• Heater Control

• Motor Control

• Solenoid Switching

• Switch-Mode Power Supplies

• Circuit Breaker

General Description

The MIC5021 high-side MOSFET driver is designed to

operate at frequencies up to 100 kHz (5 kHz PWM for

2% to 100% duty cycle) and is an ideal choice for high

speed applications such as motor control, SMPS

(switch mode power supplies), and applications using

IGBTs. The MIC5021 can also operate as a circuit

breaker with or without automatic retry.

A rising or falling edge on the input results in a current

source pulse or sink pulse on the gate output. This out-

put current pulse can turn on a 2000 pF MOSFET in

approximately 550 ns. The MIC5021 then supplies a

limited current (<2 mA), if necessary, to maintain the

output state.

An overcurrent comparator with a trip voltage of 50 mV

makes the MIC5021 ideal for use with a current-sens-

ing MOSFET. An external low value resistor may be

used instead of a sensing MOSFET for more precise

overcurrent control. An optional external capacitor

placed from the CT pin to ground may be used to con-

trol the current shutdown duty cycle (dead time) from

20% to <1%. A duty cycle from 20% to about 75% is

possible with an optional pull-up resistor from CT to

VDD. Additional parts of the MIC502x family include the

MIC5020 low-side driver and the MIC5022 half-bridge

driver with a cross-conduction interlock. The MIC5021

is available in 8-pin SOIC and plastic DIP packages.

Typical Application Circuit

MIC5021

PDIP & SOIC

High-Side Driver with Overcurrent Trip and Retry

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

SENSE

N-CHANNEL

POWER MOSFET

+12V to +36V

MIC5021

10μF

2.7

LOAD

SENSE =

50mV

TRIP

* INCREASES TIME BEFORE RETRY

OPTIONAL*

High-Speed, High-Side MOSFET Driver with Charge Pump

and Overcurrent Limit

MIC5021

DS20005677A-page 2  2016 Microchip Technology Inc.

Package Types

Functional Block Diagram

MIC5021

SOIC

Top View

MIC5021

PDIP

Top View

BOOST

GATE

SENSE-

SENSE+

INPUT

GND

VDD

INPUT

GND

VBOOST

GATE

SENSE-

SENSE+

SENSE-

SENSE+

6V INTERNAL REGULATOR

INT

50mV

INPUT

ONE-

SHOT

GATE

OFF

FAULT

NORMAL

10I

15V

CHARGE

PUMP

BOOST

↓

↑

TRANSISTOR: 106

 2016 Microchip Technology Inc. DS20005677A-page 3

MIC5021

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage, VDD................................................................................................................................................. +40V

Input Voltage, VIN ....................................................................................................................................... –0.5V to +15V

Sense Differential Voltage........................................................................................................................................±6.5V

SENSE+ or SENSE– to GND .................................................................................................................... –0.5V to +36V

Timer Voltage .......................................................................................................................................................... +5.5V

VBOOST Capacitor ................................................................................................................................................ 0.01 μF

Operating Ratings

Supply Voltage, VDD.................................................................................................................................... +12V to +36V

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,

Gate CL = 1500 pF (IRF540 MOSFET).

Parameters Sym. Min. Typ. Max. Units Conditions

DC Supply Current

——

1.8 4

VDD = 12V, Input = 0V

— — 2.5 6 VDD = 36V, Input = 0V

— — 1.7 4 VDD = 12V, Input = 5V

— — 2.5 6 VDD = 36V, Input = 5V

Input Threshold — 0.8 1.4 2.0 V —

Input Hysteresis — — 0.1 — V —

Input Pull-Down Current — 10 20 40 μA Input = 5V

Current-Limit Threshold — 30 50 70 mV Note 1

Gate On Voltage —161821

VVDD = 12V (Note 2)

—465052 V

DD = 36V (Note 2)

Gate On-Time (Fixed) tG(ON) 2610μsSense Differential  70 mV

(Note 8)

Gate Off-Time (Adjustable) tG(OFF) 10 20 50 μsSense Differential  70 mV,

CT = 0 pF (Note 8)

Gate Turn-On Delay tDLH — 500 1000 ns Note 3

Gate Rise Time tR— 400 500 ns Note 4

Gate Turn-Off Delay tDLH — 800 1500 ns Note 5

Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense

MOSFET’s current transfer ratio.

2: DC measurement.

3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.

4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.

5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)

to 17V.

6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.

7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle.

8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

MAX

MIC5021

DS20005677A-page 4  2016 Microchip Technology Inc.

Gate Fall Time tF— 400 500 ns Note 6

Max. Operating Frequency fMAX 100 150 — kHz Note 7

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,

Gate CL = 1500 pF (IRF540 MOSFET).

Parameters Sym. Min. Typ. Max. Units Conditions

Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense

MOSFET’s current transfer ratio.

2: DC measurement.

3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.

4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.

5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)

to 17V.

6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.

7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle.

8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

 2016 Microchip Technology Inc. DS20005677A-page 5

MIC5021

TEMPERATURE SPECIFICATIONS (Note 1)

Parameters Sym. Min. Typ. Max. Units Conditions

Junction Thermal Resistances

Thermal Resistance, PDIP-8Ld JA –40 — 85 °C Maximum Ambient Tem-

perature

Thermal Resistance, SOIC-8Ld JA –40 — 85 °C Maximum Ambient Tem-

perature

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum rating. Sustained junction temperatures above the maximum rating can impact the device

reliability.

MIC5021

DS20005677A-page 6  2016 Microchip Technology Inc.

2.0 TIMING DIAGRAMS

FIGURE 2-1: Normal operation.

FIGURE 2-2: Fault Operation, CT = Open.

FIGURE 2-3: Fault Condition, CT = Grounded.

INPUT

TTL (H)

SOURCE

50mV

SENSE +,–

DIFFERENTIAL

GATE

15V (MAX.)

INPUT

TTL (H)

SOURCE

50mV

SENSE +,–

DIFFERENTIAL

GATE

15V (MAX.)

6μs 20μs

INPUT

TTL (H)

SOURCE

50mV

SENSE +,–

DIFFERENTIAL

GATE

15V (MAX.)

6μs

‘ ‘ ‘ ‘ ‘ \ \ \ VGA :tﬂ: CL \ \ \ \ \ \ ‘ \ \ \ \ \HHHH \HHHH \HHHH H LY‘ VSUPFLV

 2016 Microchip Technology Inc. DS20005677A-page 7

MIC5021

3.0 TYPICAL PERFORMANCE CURVES

FIGURE 3-1: Supply Current vs. Supply

Voltage.

FIGURE 3-2: Gate Voltage Change vs.

Supply Voltage.

FIGURE 3-3: Gate Turn-On Delay vs.

Supply Voltage.

FIGURE 3-4: Gate Turn-On Delay vs.

Supply Voltage.

FIGURE 3-5: Gate Turn-On Delay vs.

Gate Capacitance.

FIGURE 3-6: Gate Turn-Off Delay vs.

Supply Voltage.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0.0

0.5

1.0

1.5

2.0

2.5

5 10152025303540

ISUPPLY (mA)

VSUPPLY (V)

VIN =0V

VIN =5V

5 10152025303540

GATE

(V)

SUPPLY

(V)

GATE

–V

SUPPLY

650

700

750

800

850

900

5 10152025303540

ON 4V

(ns)

SUPPLY

(V)

GATE

SUPPLY

+4V

= 1500pF(IRCZ34)

BOOST

=0.01μF

INCLUDES PROPAGATION DELAY

750

800

850

900

950

1000

5 10152025303540

ON 10V

(ns)

SUPPLY

(V)

GATE

SUPPLY

+ 10V

= 1500pF(IRCZ34)

BOOST

=0.01μF

INCLUDES PROPAGATION DELAY

0.0

0.5

1.0

1.5

2.0

2.5

1x10

(μs)

GATE

(pF)

GATE

SUPPLY

+4V

SUPPLY

=12V

INCLUDES PROPAGATION DELAY

750

1000

1250

1500

1750

2000

5 10152025303540

tOFF 4V (ns)

VSUPPLY (V)

GATE

SUPPLY

+4V

= 400

INCLUDES PROPAGATION DELAY

GATE

= 1500pF

(IRCZ34)

ME , DENT w \HHHH \HHHH HH \ CI w

MIC5021

DS20005677A-page 8  2016 Microchip Technology Inc.

FIGURE 3-7: Overcurrent Retry Duty

Cycle vs. Timing Capacitance.

FIGURE 3-8: Input Current vs. Input

Voltage.

FIGURE 3-9: Sense Threshold vs.

Temperature.

0.1 1 10 100 1000 10000

RETRY DUTY CYCLE (%)

CT (pF)

NOTE:

tON

OFF TIME

INDEPENDENT

OF VSUPPLY

tON =5μs

VSUPPLY =12V

100

0 5 10 15 20 25

(μA)

(V)

SUPPLY

=12V

020406080100120

VOLTAGE (mV)

TEMPERATURE (°C)

 2016 Microchip Technology Inc. DS20005677A-page 9

MIC5021

4.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 4-1.

TABLE 4-1: PIN FUNCTION TABLE

Pin Number Pin Name Description

DD Supply (+12V to 36V). Decouple with ≥ 10 μF capacitor.

2 INPUT TTL-Compatible Input. Logic high turns the external MOSFET on. An internal

pull-down returns an open pin logic low.

3CT

Retry Timing Capacitor. Controls the off time (tG(OFF)) of the overcurrent retry cycle

(duty cycle adjustment):

Open = Approximately 20% duty cycle.

Capacitor-to-Ground = Approximately 20% to <1% duty cycle.

Pull-Up Resistor = Approximately 20% to approximately 75% duty cycle.

Ground = Maintained shutdown upon overcurrent condition.

4 GND Circuit Ground.

5 SENSE+

Current-Sense Comparator (+) Input. Connect to high side of sense resistor or cur-

rent sensing MOSFET sense lead. A built-in offset in conjunction with RSENSE

sets the load overcurrent trip point.

6 SENSE– Current-Sense Comparator (–) Input. Connect to the low side of the sense resistor

(usually the high side of the load).

7GATE

Gate Drive. Drives the gate of an external power MOSFET. Also limits VGS to 15V

maximum to prevent gate-to-source damage. Will sink-and-source current.

BOOST

Charge Pump Boost Capacitor. A bootstrap capacitor from VBOOST to the FET

source pin supplies charge to quickly enhance the gate output during turn-on.

MIC5021

DS20005677A-page 10  2016 Microchip Technology Inc.

5.0 FUNCTIONAL DESCRIPTION

Refer to the MIC5021 Functional Block Diagram.

5.1 Input

A signal greater than 1.4V (nominal) applied to the

MIC5021 INPUT causes gate enhancement on an

external MOSFET turning the MOSFET on.

An internal pull-down resistor ensures that an open

input remains low, keeping the external MOSFET

turned off.

5.2 Gate Output

Rapid rise and fall times on the gate output are possible

because each input state change triggers a one-shot

which activates a high-value current sink (10I2) for a

short time. This draws a high current though a current

mirror circuit causing the output transistors to quickly

charge or discharge the external MOSFET’s gate.

A second current sink continuously draws the lower

value of current used to maintain the gate voltage for

the selected state.

An internal charge pump utilizes an external “boost”

capacitor connected between VBOOST and the source

of the external MOSFET (Refer to the Typical Applica-

tion Circuit). The boost capacitor stores charge when

the MOSFET is off. As the MOSFET turns on, its

source to ground voltage increases and is added to the

voltage across the capacitor, raising the VBOOST pin

voltage. The boost capacitor charge is directed through

the gate pin to quickly charge the MOSFET’s gate to

16V maximum above VDD. The internal charge pump

maintains the gate voltage.

An internal Zener diode protects the external MOSFET

by limiting the gate to source voltage.

5.3 SENSE Inputs

The MIC5021’s 50 mV (nominal) trip voltage is created

by internal current sources that force approximately

5 μA out of SENSE+ and approximately 15 μA (at trip)

out of SENSE–. When SENSE– is 50mV or more below

SENSE+, SENSE– steals base current from an internal

drive transistor shutting off the external MOSFET.

5.4 Overcurrent Limiting

Current source I1 charges CINT upon power up. An

optional external capacitor connected to CT is kept dis-

charged through a MOSFET Q1.

A fault condition (>50 mV from SENSE+ to SENSE–)

causes the overcurrent comparator to enable current

sink 2I1 which overcomes current source I1 to dis-

charge CINT in a short time. When CINT is discharged,

the input is disabled, which turns off the gate output,

and CINT and CT are ready to be charged.

When the gate output turns the MOSFET off, the over-

current signal is removed from the sense inputs which

deactivates current sink 2I1.This allows CINT and the

optional capacitor connected to CT to recharge. A

Schmitt trigger delays the retry while the capacitor(s)

recharge. Retry delay is increased by connecting a

capacitor to CT (optional).

The retry cycle will continue until the fault is removed or

the input is changed to TTL low.

If CT is connected to ground, the circuit will not retry

upon a fault condition.

 2016 Microchip Technology Inc. DS20005677A-page 11

MIC5021

6.0 APPLICATION INFORMATION

The MIC5021 MOSFET driver is intended for high-side

switching applications where overcurrent limiting and

high speed are required. The MIC5021 can control

MOSFETs that switch voltages up to 36V.

6.1 High-Side Switch Circuit

Advantages

High-side switching allows more of the load related

components and wiring to remain near ground potential

when compared to low-side switching. This reduces the

chances of short-to-ground accidents or failures.

6.2 Speed Advantage

The MIC5021 is about two orders of magnitude faster

than the low cost MIC5014 making it suitable for

high-frequency high-efficiency circuit operation in PWM

(pulse width modulation) designs used for motor con-

trol, SMPS (switch-mode power supply) and heating

element control.

Switched loads (on/off) benefit from the MIC5021’s fast

switching times by allowing use of MOSFETs with

smaller safe operating areas. Larger MOSFETs are

often required when using slower drivers.

6.3 Supply Voltage

The MIC5021’s supply input (VDD) is rated up to 36V.

The supply voltage must be equal to or greater than the

voltage applied to the drain of the external N-channel

MOSFET.

A 16V minimum supply is recommended to produce

continuous on-state, gate drive voltage for standard

MOSFETs (10V nominal gate enhancement).

When the driver is powered from a 12V to 16V supply,

a logic-level MOSFET is recommended (5V nominal

gate enhancement).

PWM operation may produce satisfactory gate

enhancement at lower supply voltages. This occurs

when fast switching repetition makes the boost capac-

itor a more significant voltage supply than the internal

charge pump.

6.4 Logic-Level MOSFET Precautions

Logic-level MOSFETs have lower maximum

gate-to-source voltage ratings (typically ±10V) than

standard MOSFETs (typically ±20V). When an external

MOSFET is turned on, the doubling effect of the boost

capacitor can cause the gate-to-source voltage to

momentarily exceed 10V. Internal zener diodes clamp

this voltage to 16V maximum which is too high for

logic-level MOSFETs. To protect logic-level MOS-

FETs, connect a zener diode (5V ≤ VZENER < 10V) from

gate to source.

6.5 Overcurrent Limiting

A 50 mV comparator is provided for current sensing.

The low level trip point minimizes I2R losses when a

power resistor is used for current sensing.

The adjustable retry feature can be used to handle

loads with high initial currents, such as lamps or heat-

ing elements, and can be adjusted from the CT connec-

tion.

CT to ground maintains gate drive shutdown following

an overcurrent condition.

CT open, or a capacitor to ground, causes automatic

retry. The default duty cycle (CT open) is approximately

20%. Refer to the Electrical Characteristics when

selecting a capacitor for reduced duty cycle.

CT through a pull-up resistor to VDD increases the duty

cycle. Increasing the duty cycle increases the power

dissipation in the load and MOSFET under a fault con-

dition. Circuits may become unstable at a duty cycle of

about 75% or higher, depending on conditions. Cau-

tion: The MIC5021 may be damaged if the voltage

applied to CT exceeds the absolute maximum voltage

rating.

6.6 Boost Capacitor Selection

The boost capacitor value will vary depending on the

supply voltage range.

A 0.01 μF boost capacitor is recommended for best

performance in the 12V to 20V range. (See Figure 6-1.)

Larger capacitors may damage the MIC5021.

FIGURE 6-1: 12V to 20V Configuration.

If the full 12V to 36V voltage range is required, the

boost capacitor value must be reduced to 2.7 nF

(Figure 6-2). The recommended configuration for the

20V to 36V range is to place the capacitor is placed

between VDD and VBOOST as shown in Figure 6-3.

Input

Gnd

BOOST

Gate

Sense-

Sense+

TTL Input

+12V to +20V

MIC5021

10μF

0.01

μF

Load

MIC5021

DS20005677A-page 12  2016 Microchip Technology Inc.

FIGURE 6-2: 12V to 36V Configuration.

FIGURE 6-3: Preferred 20V to 36V

Configuration.

Do not use both boost capacitors between VBOOST and

the MOSFET source and VBOOST and VDD at the same

time.

6.7 Current-Sense Resistors

Lead length can be significant when using low value

(<1Ω) resistors for current sensing. Errors caused by

lead length can be avoided by using four-terminal cur-

rent-sensing resistors. Four-terminal resistors are

available from several manufacturers.

6.8 Circuits without Current Sensing

Current sensing may be omitted by connecting the

SENSE+ and SENSE– pins to the source of the MOS-

FET or to the supply. Connecting the sense pins to the

supply is preferred for inductive loads. Do not connect

the sense pins to ground.

FIGURE 6-4: Connecting Sense to

Source.

FIGURE 6-5: Connecting Sense to

Supply.

6.9 Inductive Load Precautions

Circuits controlling inductive loads, such as solenoids

(Figure 6-6) and motors, require precautions when

controlled by the MIC5021. Wire wound resistors,

which are sometimes used to simulate other loads, can

also show significant inductive properties.

An inductive load releases stored energy when its cur-

rent flow is interrupted (when the MOSFET is switched

off). The voltage across the inductor reverses and the

inductor attempts to force current flow. Since the circuit

appears open (the MOSFET appears as a very high

resistance) a very large negative voltage occurs across

the inductor.

Input

Gnd

BOOST

Gate

Sense-

Sense+

TTL Input

+20V to +36V

MIC5021

10μF

2.7

Load

Input

Gnd

BOOST

Gate

Sense-

Sense+

TTL Input

+20V to +36V

MIC5021

10μF

Load

0.01

μF

Input

Gnd

BOOST

Gate

Sense-

Sense+

TTL Input

Load

N-Channel

Power MOSFET

V+

MIC5021

10μF

0.01

μF

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

LOAD

N-CHANNEL

POWER MOSFET

V+

MIC5021

10μF

0.01

μF

w p <17>

 2016 Microchip Technology Inc. DS20005677A-page 13

MIC5021

FIGURE 6-6: Solenoid Driver with Current

Sensing.

6.9.1 LIMITING INDUCTIVE SPIKES

The voltage across the inductor can be limited by con-

necting a Schottky diode across the load. The diode is

forward biased only when the load is switched off. The

Schottky diode clamps negative transients to a few

volts. This protects the MOSFET from drain-to-source

breakdown and prevents the transient from damaging

the charge pump by way of the boost capacitor (see

Sense Pin Considerations).

The diode should have a peak forward current rating

greater than the load current. This is because the cur-

rent through the diode is the same as the load current

at the instant the MOSFET is turned off.

6.9.2 SENSE PIN CONSIDERATIONS

The sense pins of the MIC5021 are sensitive to nega-

tive voltages. Forcing the sense pins much below

–0.5V effectively reverses the supply voltage on por-

tions of the driver resulting in unpredictable operation

or damage.

Figure 6-7 shows current flowing out of the sense leads

of an MIC5021 during a negative transient (inductive

kick). Internal Schottky diodes attempt to limit the neg-

ative transient by maintaining a low forward drop.

FIGURE 6-7: Inductive Load Turn-Off.

Although the internal Schottky diodes can protect the

driver in low-current resistive applications, they are

inadequate for inductive loads or the lead inductance in

high-current resistive loads. Because of their small

size, the diodes’ forward voltage drop quickly exceeds

0.5V as current increases.

6.9.3 EXTERNAL PROTECTION

Resistors placed in series with each SENSE connec-

tion limit the current drawn from the internal Schottky

diodes during a negative transient. This minimizes the

forward drop across the diodes.

During normal operation, sensing current from the

sense pins is unequal (5 μA and 15 μA). The internal

Schottky diodes are reverse-biased and have no effect.

To avoid skewing the trip voltage, the current limiting

resistors must drop equal voltages at the trip point cur-

rents (see Figure 6-8). To minimize resistor tolerance

error, use a voltage drop lower than the trip voltage of

50 mV. 5 mV is suggested.

FIGURE 6-8: Resistor Voltage Drop.

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

SENSE

N-CHANNEL

POWER MOSFET

(IRF540)

+20V TO +36V

MIC5021

10μF

SOLENOID

(24V, 47Ω)

0.01

μF

SCHOTTKY

DIODE

(1N5822)

(+24V)

(<0.08Ω)

MOSFET

TURN-OFF

NEGATIVE

SPIKE

VDD

INPUT

GATE

MIC5021

INDUCTIVE

LOAD

FORWARD DROP ACROSS DIODES

ALLOWS LEADS TO GO NEGATIVE

CURRENT FLOWS FROM GROUND (0V)

THROUGH THE DIODES TO THE LOAD

DURING NEGATIVE TRANSCIENTS.

VDD

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

N-CHANNEL

POWER MOSFET

MIC5021

LOAD

5μA

15μA

TO AVOID SKEWING

THE 50mV TRIP POINT.

(5mV SUGGESTED)

R1 3

VR1

50mV NOMINAL

(@ TRIP)

MIC5021

DS20005677A-page 14  2016 Microchip Technology Inc.

External Schottky diodes are also recommended (see

D2 and D3 in Figure 6-9). The external diodes clamp

negative transients better than the internal diodes

because their larger size minimizes the forward voltage

drop at higher currents.

FIGURE 6-9: Protection from Inductive

Kick.

6.9.4 HIGH-SIDE SENSING

Sensing the current on the high side of the MOSFET

isolates the sense pins from the inductive spike.

FIGURE 6-10: High-Side Sensing.

6.10 Lamp Driver Application

Incandescent lamps have a high inrush current (low

resistance) when turned on. The MIC5021 can perform

a “soft start” by pulsing the MOSFET (overcurrent con-

dition) until the filament is warm and its current

decreases (resistance increases). The sense resistor

value is selected so the voltage drop across the sense

resistor decreases below the sense threshold (50 mV)

as the filament becomes warm. The FET is no longer

pulsed and the lamp turns completely on.

A lamp may not fully turn on if the filament does not

heat up adequately. Changing the duty cycle, sense

resistor, or both to match the filament characteristics

can correct the problem.

Soft start can be demonstrated using a #1157 dual fila-

ment automotive lamp. The value of RS shown in

Figure 6-11 allows for soft start of the higher-resistance

filament (measures approx. 2.1Ω cold or 21Ω hot).

FIGURE 6-11: Lamp Driver with Current

Sensing.

6.11 Remote Overcurrent Limiting

Reset

In circuit breaker applications where the MIC5021

maintains an off condition after an overcurrent condi-

tion is sensed, the CT pin can be used to reset the

MIC5021.

FIGURE 6-12: Remote Control Circuit.

Switching Q1 on pulls CT low which keeps the

MIC5021 gate output off when an overcurrent is

sensed. Switching Q1 off causes CT to appear open.

The MIC5021 retries in about 20 μs and continues to

retry until the overcurrent condition is removed.

For demonstration purposes, a 680Ω load resistor and

3Ω sense resistor will produce an overcurrent condition

when the load’s supply (V+) is approximately 12V or

greater.

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

INDUCTIVE

LOAD

N-CHANNEL

POWER MOSFET

+12V TO +36V

MIC5021

10μF

2.7

SENSE

1.0k

330Ω

11DQ03

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

WIREWOUND

RESISTOR

Ω)

N-CHANNEL

POWER MOSFET

(IRFZ44)

+12V TO +20V

RSENSE

(< 0.01Ω)

(+12V)

MIC5021

10μF

0.01

μF

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

SENSE

(0.041Ω)

N-CHANNEL

POWER MOSFET

(IRF540)

V+

MIC5021

10μF

0.01

μF

INCANDESCENT

LAMP (#1157)

(+12V)

"( )" VALUES APPLY TO DEMO CIRCUIT.

SEE TEXT.

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

SENSE

N-CHANNEL

POWER MOSFET

+12V TO +20V

MIC5021

10μF

0.01

μF

LOAD

74HC04

(EXAMPLE)

2N3904

10k TO

100k

RETRY (H)

MAINTAINED (L)

 2016 Microchip Technology Inc. DS20005677A-page 15

MIC5021

The gate-to-source configuration (refer to Figure 6-13)

is appropriate for resistive and inductive loads. This

also causes the smallest decrease in gate output volt-

age.

FIGURE 6-13: Gate-to-Source Pull-Down.

The gate-to-ground configuration (refer to Figure 6-14)

is appropriate for resistive, inductive, or capacitive

loads. This configuration will decrease the gate output

voltage slightly more than the circuit shown in

Figure 6-13.

FIGURE 6-14: Gate-to-Ground Pull-Down.

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

RSENSE

+12V TO +36V

MIC5021AJB

10μF

2.7

LOAD

2.2M

ADD RESISTOR FOR

-40°C TO -55°C OPERATION

INPUT

GND

BOOST

GATE

SENSE-

SENSE+

TTL INPUT

SENSE

+12V TO +36V

MIC5021AJB

10μF

2.7

LOAD

2.2M

ADD RESISTOR FOR

-40°C TO -55°C OPERATION

NNN

MIC5021

DS20005677A-page 16  2016 Microchip Technology Inc.

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

8-lead PDIP* Example

XXX

XXXXX

YYWW

MIC

5021YN

1127

8-lead SOIC* Example

XXX

XXXXX

YYWW

MIC

5021YM

0812

Legend: XX...X Product code or customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Pb-free JEDEC® designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

●, ▲, ▼Pin one index is identified by a dot, delta up, or delta down (triangle

mark).

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available charac-

ters for customer-specific information. Package may or may not include the

corporate logo.

Underbar (_) and/or Overbar (‾) symbol may not be to scale.

TITLE 8 LEAD PDIP PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING u PDIP’SLD’PL’I UNIT INCH Lead Frame Coppe: Lead Finish Matte Tin mama: TDP VIEW 5 75 5% ‘«‘ ? N” L C. m ‘ 4m us m on n» a mm c S‘DE V‘EW an ans ‘ 1 ‘ I - um I" 7} § 5 5 mm m m. m END VIEW rm n22 \mumm nu 3mm M

 2016 Microchip Technology Inc. DS20005677A-page 17

MIC5021

8-Lead PDIP Package Outline & Recommended Land Pattern

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging.

TITLE 8 LEAD SOICN PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING a |SOICN78LD7PL71 m n 111 Mm gamma [599mm um ﬁﬁ mam] mp vmv E— n:- s 7:. n m: 5333;“? m :3 1g; 1 w a 155 2g [:1 w :3}; 1 as: mum mm at n s: :33.) G) J WWW men :m 1 n nus mg; (111513;: J w NDTES 1 mmmsmns ARE IN wwnmm CEINTREILLINE DIMENSIEIN‘ INCHES DIMENSJDN DUES NEIT INCLUDE MEILD FLASH ma paurzusmNs, [mm or WHICH SHALL NUT EXCEED omnmes] PER SIDE 4 DETAIL % L—uLHES :me [u e; 53.33 ] UNIT | INCH [MM] 7 )DYYEIN MARK FY nuasmmn nu Mg; L J L m u 1:51 masuuin nsc w [ssafﬂi] mmiﬂtEIJ L J L [L27 am P N

MIC5021

DS20005677A-page 18  2016 Microchip Technology Inc.

8-Lead SOICN Package Outline & Recommended Land Pattern

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging.

 2016 Microchip Technology Inc. DS20005677A-page 19

MIC5021

APPENDIX A: REVISION HISTORY

Revision A (December 2016)

• Converted Micrel document MIC5021 to Micro-

chip data sheet template DS20005677A.

• Minor grammatical text changes throughout.

MIC5021

DS20005677A-page 20  2016 Microchip Technology Inc.

NOTES:

RT —I>< —'=""><>

 2016 Microchip Technology Inc. DS20005677A-page 21

MIC5021

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.

Examples:

a) MIC5021YM: High-Speed, High-Side

MOSFET Driver with

Charge Pump and Over-

current Limit,

–40°C to +85°C (RoHS

Compliant),

8LD SOIC

b) MIC5021YN: High-Speed, High-Side

MOSFET Driver with

Charge Pump and Over-

current Limit,

–40°C to +85°C (RoHS

Compliant),

8LD Plastic DIP

PART NO. X XX

PackageTemperature

Range

Device

Device: MIC5021: High-Speed, High-Side MOSFET Driver with

Charge Pump and Overcurrent Limit

Temperature

Range: Y = –40C to +85C (RoHS Compliant)

Packages: M = 8-Pin SOIC

N = 8-Pin Plastic DIP

Note 1: Tape and Reel identifier only appears in the

catalog part number description. This

identifier is used for ordering purposes and

is not printed on the device package. Check

with your Microchip Sales Office for package

availability with the Tape and Reel option.

MIC5021

DS20005677A-page 22  2016 Microchip Technology Inc.

NOTES:

QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV = ISO/TS 16949 =

 2016 Microchip Technology Inc. DS00000000A-page 23

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights unless otherwise stated.

Trademarks

The Microchip name and logo, the Microchip logo, AnyRate, AVR,

AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,

CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,

KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,

maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,

OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip

Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST

Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered

trademarks of Microchip Technology Incorporated in the U.S.A.

and other countries.

ClockWorks, The Embedded Control Solutions Company,

EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,

mTouch, Precision Edge, and Quiet-Wire are registered

trademarks of Microchip Technology Incorporated in the U.S.A.

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any

Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,

CodeGuard, CryptoAuthentication, CryptoCompanion,

CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average

Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial

Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,

KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,

MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,

Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,

PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple

Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,

SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,

USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA,

and ZENA are trademarks of Microchip Technology Incorporated

in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated in

the U.S.A.

Silicon Storage Technology is a registered trademark of Microchip

Technology Inc. in other countries.

GestIC is a registered trademark of Microchip Technology

Germany II GmbH & Co. KG, a subsidiary of Microchip

Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

ISBN: 978-1-5224-1200-7

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

6‘ ‘MICRDCHIP

DS20005677A-page 24  2016 Microchip Technology Inc.

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

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http://www.microchip.com/

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Web Address:

www.microchip.com

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Tel: 972-818-7423

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Tel: 248-848-4000

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Tel: 281-894-5983

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ASIA/PACIFIC

China - Xiamen

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China - Zhuhai

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Korea - Seoul

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Fax: 82-2-558-5932 or

82-2-558-5934

Malaysia - Kuala Lumpur

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Fax: 60-3-6201-9859

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Fax: 886-3-5770-955

Taiwan - Kaohsiung

Tel: 886-7-213-7830

Taiwan - Taipei

Tel: 886-2-2508-8600

Fax: 886-2-2508-0102

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

EUROPE

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

Finland - Espoo

Tel: 358-9-4520-820

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

France - Saint Cloud

Tel: 33-1-30-60-70-00

Germany - Garching

Tel: 49-8931-9700

Germany - Haan

Tel: 49-2129-3766400

Germany - Heilbronn

Tel: 49-7131-67-3636

Germany - Karlsruhe

Tel: 49-721-625370

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

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Tel: 49-8031-354-560

Israel - Ra’anana

Tel: 972-9-744-7705

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

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Tel: 39-049-7625286

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Tel: 46-8-5090-4654

UK - Wokingham

Tel: 44-118-921-5800

Fax: 44-118-921-5820

Worldwide Sales and Service

11/07/16

Datenblatt für MIC5021 von Microchip Technology

INFORMATION

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