Datenblatt für MBR(F)30L45CTG von onsemi

0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 2016
July, 2020 − Rev. 4
1Publication Order Number:
MBR30L45CT/D
Switch-mode
Power Rectifier
45 V, 30 A
MBR30L45CTG,
MBRF30L45CTG
Features and Benefits
•Low Forward Voltage
•Low Power Loss/High Efficiency
•High Surge Capacity
•150°C Operating Junction Temperature
•30 A Total (15 A Per Diode Leg)
•Guard−Ring for Stress Protection
Applications
•Power Supply − Output Rectification
•Power Management
•Instrumentation
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight (Approximately): 1.9 Grams
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Shipped 50 Units Per Plastic Tube
•This is a Pb−Free Device*
MAXIMUM RATINGS
Please See the Table on the Following Page
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DUAL SCHOTTKY
BARRIER RECTIFIERS
30 AMPERES, 45 VOLTS
1
3
2, 4
www.onsemi.com
Device Package Shipping
ORDERING INFORMATION
MARKING
DIAGRAMS
B30L45 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Device
MBRF30L45CTG TO−220FP
(Pb−Free)
50 Units/Rail
TO−220
CASE 221A
PLASTIC
3
12
4
AYWW
B30L45G
A K A
TO−220
FULLPAKt
CASE 221D
B30L45G
YWW
MBR30L45CTG TO−220
(Pb−Free)
50 Units/Rail
www onsem' com
MBR30L45CTG, MBRF30L45CTG
www.onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR) TC = 137°C
IF(AV) 15 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM 30 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 190 A
Operating Junction Temperature (Note 1) TJ−55 to +150 °C
Storage Temperature Tstg *55 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
(MBR30L45CTG) Junction−to−Case
Junction−to−Ambient
(MBRF30L45CTG) Junction−to−Case
RqJC
RqJA
RqJC
1.9
45
2.2
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25°C)
(IF = 15 A, TC = 125°C)
(IF = 30 A, TC = 25°C)
(IF = 30 A, TC = 125°C)
vF
0.50
0.44
0.61
0.60
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
0.65
250
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
MBR30L45CTG, MBRF30L45CTG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.90.70.60.50.30.20.10
0.1
1
10
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
VR, REVERSE VOLTAGE (V)
50353025151050
1E−04
1E−03
1E−02
1E−01
1E+00
Figure 5. Current Derating
TC, CASE TEMPERATURE (°C)
155145140125120110105100
0
5
15
20
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
IR, REVERSE CURRENT (A)
IF
, AVERAGE FORWARD CURRENT (A)
0.4
100
150°C125°C
25°C
150°C
125°C
25°C
20 40 45
130115 135
10
Square Wave
dc
0.8
75°C
VF
, MAXIMUM FORWARD VOLTAGE (V)
0.90.70.60.50.30.20.10
0.1
1
10
IF
, INSTANTANEOUS FORWARD
CURRENT (A)
0.4
100
150°C125°C
25°C
0.8
75°C
1E−05
75°C
VR, REVERSE VOLTAGE (V)
50353025151050
1E−04
1E−03
1E−02
1E−01
1E+00
IR, REVERSE CURRENT (A)
150°C
125°C
25°C
20 40 45
1E−05
75°C
150
25
30
Square Wave
MBR30L45CTG, MBRF30L45CTG
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 6. Forward Power Dissipation Figure 7. Typical Capacitance
VR, REVERSE VOLTAGE (V)
40352520151050
100
1000
10000
C, CAPACITANCE (pF)
4530
Io, AVERAGE FORWARD CURRENT (A)
3025151050
0
4
8
PFO, AVERAGE POWER
DISSIPATION (W)
20
24 Square Wave
12
16
20
28
dc
2
6
22
10
14
18
26
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient for MBR30L45CTG
10000.10.00001
t1, TIME (sec)
1
0.0001 0.001 0.01 1 10 1000.000001
0.1
10
100
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response Junction−to−Case for MBR30L45CTG
10000.10.00001
t1, TIME (sec)
10
0.01 0.0001 0.001 0.01 1 10 1000.000001
0.1
1
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
0.01
MBR30L45CTG, MBRF30L45CTG
www.onsemi.com
5
R(t), TRANSIENT THERMAL RESISTANCE
Figure 10. Thermal Response Junction−to−Case for MBRF30L45CTG
10000.10.00001
t1, TIME (sec)
0.1
0.0001 0.001 0.01 1 10 1000.000001
0.01
1
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
0.001
FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
4. EMITTER
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
STYLE 10:
PIN 1. GATE
2. SOURCE
3. DRAIN
4. SOURCE
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 8:
PIN 1. CATHODE
2. ANODE
3. EXTERNAL TRIP/DELAY
4. ANODE
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 11:
PIN 1. DRAIN
2. SOURCE
3. GATE
4. SOURCE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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DOCUMENT NUMBER:
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−220
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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TO−220 FULLPAK
CASE 221D−03
ISSUE K
DATE 27 FEB 2009
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. CATHODE
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.617 0.635 15.67 16.12
INCHES
B0.392 0.419 9.96 10.63
C0.177 0.193 4.50 4.90
D0.024 0.039 0.60 1.00
F0.116 0.129 2.95 3.28
G0.100 BSC 2.54 BSC
H0.118 0.135 3.00 3.43
J0.018 0.025 0.45 0.63
K0.503 0.541 12.78 13.73
L0.048 0.058 1.23 1.47
N0.200 BSC 5.08 BSC
Q0.122 0.138 3.10 3.50
R0.099 0.117 2.51 2.96
S0.092 0.113 2.34 2.87
U0.239 0.271 6.06 6.88
STYLE 5:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 6:
PIN 1. MT 1
2. MT 2
3. GATE
SEATING
PLANE
−T−
U
C
S
J
R
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
MARKING
DIAGRAMS
xxxxxx = Specific Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
xxxxxxG
AYWW
A = Assembly Location
Y = Year
WW = Work Week
xxxxxx = Device Code
G = Pb−Free Package
AKA = Polarity Designator
AYWW
xxxxxxG
AKA
Bipolar Rectifier
−B−
−Y−
G
N
D
L
K
H
A
F
Q
3 PL
123
M
B
M
0.25 (0.010) Y
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42514B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
TO−220 FULLPAK
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
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