Datenblatt für PMFPB8032XP von Nexperia USA Inc.

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PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky
combination
21 December 2012 Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•1.8 V RDSon rated for low-voltage gate drive
•Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
•Exposed drain pad for excellent thermal conduction
•Integrated ultra low VF MEGA Schottky diode
3. Applications
•Charging switch for portable devices
•DC-to-DC converters
•Power management in battery-driven portables
•Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
MOSFET transistor
VDS drain-source voltage - - -20 V
VGS gate-source voltage
Tj = 25 °C
-12 - 12 V
IDdrain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Schottky diode
IFforward current Tsp ≤ 105 °C - - 2 A
VRreverse voltage Tamb = 25 °C - - 20 V
MOSFET transistor static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C - 80 102 mΩ
PMFPBBOSZXP u u u A G 5‘ U C 4 W W 7‘ Transparent mp View D n m... av mm mm mm
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 2 / 16
Symbol Parameter Conditions Min Typ Max Unit
Schottky diode
VFforward voltage IF = 1 A; Tj = 25 °C - 320 365 mV
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A anode
2 n.c. not connected
3 D drain
4 S source
5 G gate
6 K cathode
7 K cathode
8 D drain
Transparent top view
6
7 8
5 4
1 2 3
DFN2020-6 (SOT1118)
aaa-003667
G
K
A S
D
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMFPB8032XP DFN2020-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118
7. Marking
Table 4. Marking codes
Type number Marking code
PMFPB8032XP 1X
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
MOSFET transistor
VDS drain-source voltage Tj = 25 °C - -20 V
PMFPBBOSZXP IWuav zm‘l unm‘ mama
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 3 / 16
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -12 12 V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.7 A
VGS = -4.5 V; Tamb = 25 °C [1] - -2.7 A
IDdrain current
VGS = -4.5 V; Tamb = 100 °C [1] - -1.7 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -11 A
[2] - 485 mWTamb = 25 °C
[1] - 1100 mW
Ptot total power dissipation
Tsp = 25 °C - 6250 mW
Source-drain diode
ISsource current Tamb = 25 °C [1] - -1.1 A
Schottky diode
VRreverse voltage Tamb = 25 °C - 20 V
IFforward current Tsp ≤ 105 °C - 2 A
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 ; Tamb = 25 °C - 7 A
tp = 8 ms; Tj(init) = 25 °C; square wave - 18 AIFSM non-repetitive peak forward
current tp = 8 ms; Tj(init) = 25 °C; half-sine wave [3] - 25 A
[2] - 480 mWTamb = 25 °C
[1] - 1190 mW
Ptot total power dissipation
Tsp = 25 °C - 6250 mW
Per device
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Calculated from square-wave measurements.
PMFPBBO32XP 017355122 017553124 01 755.5553 us .mpmav 200 NM h'ivesqmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 4 / 16
Tj(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 1. MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Tj(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 2. MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
017aaa563
-1
-10-1
-10
-102
ID
(A)
-10-2
VDS (V)
-10-1 -102
-10-1
Limit RDSon = VDS/ID
tp = 10 µs
tp = 100 µs
tp = 10 ms
tp = 100 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
IDM = single pulse
Fig. 3. MOSFET transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMFPBBO32XP 01 7555554 .leplnaEV zen NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 5 / 16
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
MOSFET transistor
[1] - 225 260 K/Win free air
[2] - 99 115 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air; t ≤ 5 s [2] - 54 62 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 16 20 K/W
Schottky diode
[1] - - 260 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] - - 105 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa564
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMFPBBO32XP 01 7555565 01 7355032 .leplniEV zen m h'ivswmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 6 / 16
017aaa565
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
017aaa082
tp(s)
10- 3 102103
10110- 2 10- 1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 6. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMFPBBO32XP 01 7355053 .leplnaEV zen NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 7 / 16
017aaa083
tp(s)
10- 3 102103
10110- 2 10- 1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
FR4 PCB, mounting pad for cathode 6 cm2
Fig. 7. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
MOSFET transistor static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V
VGSth gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C -0.4 -0.6 -1 V
VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µAIDSS drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA
VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nAIGSS gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C - 80 102 mΩ
VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C - 116 148 mΩ
VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C - 95 125 mΩ
RDSon drain-source on-state
resistance
VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C - 120 156 mΩ
gfs transfer conductance VDS = -10 V; ID = -2.7 A; Tj = 25 °C - 15 - S
MOSFET transistor dynamic characteristics
QG(tot) total gate charge - 5.7 8.6 nC
QGS gate-source charge - 0.7 - nC
QGD gate-drain charge
VDS = -10 V; ID = -2.7 A; VGS = -4.5 V;
Tj = 25 °C
- 0.96 - nC
PMFPBBOSZXP 017533531 017553532 us :NvalnaEV 20w Munmsmmu
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 8 / 16
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance - 550 - pF
Coss output capacitance - 63 - pF
Crss reverse transfer
capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 53 - pF
td(on) turn-on delay time - 6 - ns
trrise time - 14 - ns
td(off) turn-off delay time - 120 - ns
tffall time
VDS = -10 V; ID = -2.4 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 50 - ns
MOSFET transistor source-drain diode
VSD source-drain voltage IS = -1.1 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V
Schottky diode
IF = 100 mA; Tj = 25 °C - 225 275 mV
IF = 500 mA; Tj = 25 °C - 285 335 mV
VFforward voltage
IF = 1 A; Tj = 25 °C - 320 365 mV
VR = 5 V; Tj = 25 °C - 65 220 µA
VR = 5 V; Tj = 125 °C - 13 50 mA
VR = 10 V; Tj = 25 °C - 110 400 µA
IRreverse current
VR = 20 V; Tj = 25 °C - 230 700 µA
Cddiode capacitance VR = 5 V; f = 1 MHz; Tj = 25 °C - 60 70 pF
VDS (V)
0 -4-3-1 -2
017aaa531
-4
-6
-2
-8
-10
ID
(A)
0
VGS = -1.8 V
-10 V
-4.5 V
-2.5 V
-2 V
-1.6 V
-1.5 V
-1.4 V
-1.2 V
-1 V
Tj = 25 °C
Fig. 8. MOSFET transistor: Output characteristics:
drain current as a function of drain-source
voltage; typical values
017aaa532
-10-4
-10-3
ID
(A)
-10-5
VGS (V)
0 -1.00-0.75-0.25 -0.50
min typ max
Tj = 25 °C; VDS = -5 V
Fig. 9. MOSFET transistor: Subthreshold drain current
as a function of gate-source voltage
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© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 9 / 16
ID (A)
0 -4-3-1 -2
017aaa533
0.10
0.15
0.05
0.20
0.25
RDSon
(Ω)
0
-1.3 V VGS = -1.4 V
-1.6 V
-1.8 V
-2.5 V
-4.5 V
Tj = 25 °C
Fig. 10. MOSFET transistor: Drain-source on-state
resistance as a function of drain current; typical
values
VGS (V)
0 -4-3-1 -2
017aaa534
0.2
0.1
0.3
0.4
RDSon
(Ω)
0
Tj= 150 °C
Tj= 25 °C
ID = -3 A
Fig. 11. MOSFET transistor: Drain-source on-state
resistance as a function of gate-source voltage;
typical values
VGS (V)
0 -2.5-2.0-1.0 -1.5-0.5
017aaa535
-4
-6
-2
-8
-10
ID
(A)
0
Tj= 150 °C Tj= 25 °C
VDS > ID × RDSon
Fig. 12. MOSFET transistor: Transfer characteristics:
drain current as a function of gate-source
voltage; typical values
Tj (°C)
-60 1801200 60
017aaa536
1.0
0.5
1.5
2.0
a
0
Fig. 13. MOSFET transistor: Normalized drain-source
on-state resistance as a function of junction
temperature; typical values
PMFPBBO32XP mm mm \\ \ \_ \\ \ \\ T‘ as mm _______ — — — _L I I \I/ \ , \ I \ I \ 5‘ D4 mm, Oz; .leplnaEV zen NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 10 / 16
Tj (°C)
-60 1801200 60
017aaa537
-1.0
-0.5
-1.5
-2.0
VGS(th)
(V)
0
min
typ
max
ID = -0.25 mA; VDS = VGS
Fig. 14. MOSFET transistor: Gate-source threshold
voltage as a function of junction temperature
017aaa538
VDS (V)
-10-1 -102
-10-1
102
103
C
(pF)
10
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 15. MOSFET transistor: Input, output and reverse
transfer capacitances as a function of drain-
source voltage; typical values
QG (nC)
0 1293 6
017aaa539
-4
-8
-12
VGS
(V)
0
ID = -3 A; VDS = -10 V; Tamb = 25 °C
Fig. 16. MOSFET transistor: Gate-source voltage as a
function of gate charge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 17. MOSFET transistor: Gate charge waveform
definitions
PMFPBBO32XP 471 735.5540 017553034 so F 017355035 017aaafl86
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 11 / 16
VSD (V)
0 -1.4-1.2-0.4 -0.8
017aaa540
-2
-1
-3
-4
IS
(A)
0
Tj= 25 °CTj= 150 °C
VGS = 0 V
Fig. 18. MOSFET transistor: Source current as a
function of source-drain voltage; typical values
VF(V)
0.0 1.00.80.4 0.60.2
017aaa084
10- 2
10- 1
10- 3
1
10
IF
(A)
10- 4
(1)
(2)
(3) (4) (5)
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig. 19. Schottky diode: Forward current as a function
of forward voltage; typical values
017aaa085
1
10- 1
10- 2
10- 3
10- 4
10- 5
10- 6
IR
(A)
10- 7
VR(V)
0 20155 10
(1)
(2)
(3)
(4)
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig. 20. Schottky diode: Reverse current as a function
of reverse voltage; typical values
VR(V)
0 20155 10
017aaa086
100
150
50
200
250
Cd
(pF)
0
f = 1 MHz; Tamb = 25 °C
Fig. 21. Schottky diode: Diode capacitance as a
function of reverse voltage; typical values
PMFPBBOSZXP 017mm amb a "up.“ av mu m um: yrs-Md
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 12 / 16
Tamb (°C)
0 50 100 150 1751257525
017aaa087
0.8
1.6
2.4
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 6 cm2
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 22. Schottky diode: Average forward current as a function of ambient temperature; typical values
11. Test information
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig. 23. Duty cycle definition
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© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 13 / 16
12. Package outline
Fig. 24. Package outline DFN2020-6 (SOT1118)
13. Soldering
sot1118_fr
Dimensions in mm
solder paste
solder resist
occupied area
solder lands
0.49 0.49
0.650.65
0.875
0.875
2.25
0.35
(6×)
0.3
(6×)
0.4
(6×)
0.45
(6×)
0.72
(2×)
0.82
(2×)
1.05
(2×)
1.15
(2×)
2.1
Fig. 25. Reflow soldering footprint for DFN2020-6 (SOT1118)
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMFPB8032XP v.1 20121221 Product data sheet - -
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© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 14 / 16
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
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Notwithstanding any damages that customer might incur for any reason
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Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Quick reference data — The Quick reference data is an extract of the
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Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
PMFPB8032XP nurw-mavznw "mum"...
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 15 / 16
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PMFPBBOSZXP n m... av mm mm mm
© Nexperia B.V. 2017. All rights reserved
Nexperia PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
PMFPB8032XP All information provided in this document is subject to legal disclaimers.
Product data sheet 21 December 2012 16 / 16
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information .............................................2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................5
10 Characteristics .......................................................7
11 Test information ................................................... 12
12 Package outline ................................................... 13
13 Soldering .............................................................. 13
14 Revision history ................................................... 13
15 Legal information .................................................14
15.1 Data sheet status ............................................... 14
15.2 Definitions ...........................................................14
15.3 Disclaimers .........................................................14
15.4 Trademarks ........................................................ 15
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
21 December 2012