Datenblatt für DMP56D0UV von Diodes Incorporated

Gs as I“ 1—! L] U WWW KDS YM UULJ DMP56DOUV Document number 0536174 Rev 272 1 of 5 www.diodes.com
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
1 of 5
www.diodes.com June 2013
© Diodes Incorporated
DMP56D0UV
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) ID
T
A
= +25°C
-50V 6Ω @ VGS = -4 V -160mA
8Ω @ VGS = -2.5V -120mA
Descriptions
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Features and Benefits
Low On-Resistance
ESD Protected Gate
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP56D0UV -7 SOT563 3000/Tape & Reel
DMP56D0UV -13 SOT563 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT563
TOP VIEW
TOP VIEW
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
KD3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ESD PROTECTE
D
e3
Green
EODES. DMP56DOUV 2 of 5 Document number 0536174 Rev 272 www.diodes.cnm
DMP56D0UV
Document number: DS36174 Rev. 2 - 2
2 of 5
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© Diodes Incorporated
DMP56D0UV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Gate-Source Voltage Continuous VGSS 8 V
Drain Current (Note 5) Continuous ID -160 mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -700 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 400 mW
Thermal Resistance, Junction to Ambient (Note 5) R
JA 313 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS -10 µA
VDS = -50V, VGS = 0V
Gate-Body Leakage IGSS 1 µA VGS = 8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.5 -1.2 V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance RDS (ON)

4.6
6.0
6
8 Ω VGS = -4V, ID = -100mA
VGS = -2.5V, ID = -80mA
Forward Transfer Admittance Yfs 100 mS VDS = -5V, ID = -100mA
Diode Forward Voltage VSD  -1.2 V
VGS = 0V, IS = -100mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss 50.54 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 3.49 pF
Reverse Transfer Capacitance Crss 2.42 pF
Gate Resistance RG  201  Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge VGS = 4.5V Q
g
 0.58  nC VGS = -4V, VDS = -25V,
ID = -100mA
Gate-Source Charge Q
g
s 0.09 nC
Gate-Drain Charge Q
g
d 0.14 nC
Turn-On Delay Time tD
(
on
)
4.46 nS
VDD = -30V, ID = -0.27A, VGEN = -4V,
RGEN = 6Ω
Turn-On Rise Time t
6.63 nS
Turn-Off Delay Time tD
(
off
)
 21.9  nS
Turn-Off Fall Time tf  15.0  nS
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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DMP56D0UV
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0.0
0.2
0.4
0.6
0.8
0 0.5 1 1.5 2 2.5 3 3.5 44.5 5
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 1.5V
GS
V = 1.2V
GS
V = 1.8V
GS
V = 2.5V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
0.1
0.2
0.3
0.4
-V , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
V = -5V
DS
T = 85°C
A
T = 150°C
A
T = 25°C
A
T = 125°C
A
T = -55°C
A
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6
-I , DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistnace vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = -2.5V
GS
V = -4.5V
GS
V = -4.0V
GS
V = -8.0V
GS
0
1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
-I , DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
10
T = 150°C
A
V = -4V
GS
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E
(NORMALIZED)
DS(ON)
V = -4V
I = -100mA
GS
D
V = -2.5V
I = -100mA
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
J
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESISTA
N
C
E ( )
DS(ON)
9
8
7
3
2
1
0
6
5
4
V = -4V,
I = -100mA
GS
D
V = -2.5V,
I = -100mA
GS
D
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Package Outline Dimensions
1.5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
1
0.5
0
I = -250µA
D
I = -1mA
D
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
100
0 5 10 15 20 25 30 35 40
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (
P
F
)
T
10
1
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge Characteristics
g
-V , GATE THRESHOLD VOLTAGE (V)
GS
V = -25V
I = -100mA
DS
D
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
A
M
L
BC
H
K
G
D
EODES. k——+ <+—a| iol="" dmp56douv="" 5="" of="" 5="" document="" number="" 0536174="" rev="" 272="" www.diodes.com="">
DMP56D0UV
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Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C 1.7
E 0.5
X
Z
Y
C1
C2
C2
G