Datenblatt für AO6409A von Alpha & Omega Semiconductor Inc.

ALPHA & OMEGA SEMICONDUCTOR DEE Dfl‘fl r‘% Lg le
AO6409A
20V
P-Channel MOSFET
General Description Product Summary
VDS -20V
ID (at VGS=-4.5V) -5.5A
RDS(ON) (at VGS= -4.5V) < 41mW
RDS(ON) (at VGS= -2.5V) < 53mW
RDS(ON) (at VGS= -1.8V) < 65mW
ESD protected
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RqJL
The AO6409A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Maximum
Units
Drain-Source Voltage
-20
V
Gate-Source Voltage
±8
V
TA=25°C
ID
-5.5
A
TA=70°C
-4.2
Pulsed Drain Current C
-30
Units
TA=25°C
PD
2.1
W
TA=70°C
1.3
75
90
°C/W
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Typ
Max
Maximum Junction-to-Lead
37
45
°C/W
Maximum Junction-to-Ambient A
RqJA
48
60
°C/W
Maximum Junction-to-Ambient A D
TSOP6
Top View Bottom View
Pin1
S
G
D
Top View
D
D
G
D
S
D
1
2
3
6
5
4
Rev 4.0: January 2019 www.aosmd.com Page 1 of 5
ALPHA&0MEGA SEIWICOND UCTOR
AO6409A
Symbol Min Typ Max Units
BVDSS -20 V
VDS=-20V, VGS=0V -1
TJ=55°C -5
IGSS ±10 mA
VGS(th) Gate Threshold Voltage -0.3 -0.57 -0.9 V
ID(ON) -30 A
34 41
TJ=125°C 49 59
42 53
mW
52 65
mW
gFS 20 S
VSD -0.64 -1 V
IS-2 A
Ciss 600 751 905 pF
Coss 80 115 150 pF
Crss 48 80 115 pF
Rg613 20 W
Qg7.4 9.3 11 nC
Qgs 0.8 1 1.2 nC
Qgd 1.3 2.2 3.1 nC
tD(on) 13 ns
tr9ns
tD(off) 19 ns
tf29 ns
trr 20 26 32 ns
Qrr 40 51 62 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IDSS
Zero Gate Voltage Drain Current
mA
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=-250mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±8V
VDS=VGS, ID=-250mA
On state drain current
VGS=-4.5V, VDS=-5V
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5.5A
mW
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-5.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-5.5A
Gate Source Charge
Gate Drain Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Body Diode Reverse Recovery Charge
IF=-5.5A, dI/dt=500A/ms
Turn-On DelayTime
VGS=-4.5V, VDS=-10V, RL=1.8W,
RGEN=3W
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-5.5A, dI/dt=500A/ms
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 4.0: January 2019 www.aosmd.com Page 2 of 5
ALPHA&0MEGA SEMICONDUCTOR 125c/ 25* c 125“ c
AO6409A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 0.5 1 1.5 2
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
30
40
50
60
70
80
0 2 4 6 8 10
RDS(ON) (mW)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS (A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.80
1.00
1.20
1.40
1.60
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
20
40
60
80
100
120
0 2 4 6 8
RDS(ON) (mW)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=-5V
VGS=-1.8V
VGS=-4.5V
ID=-5.5A
25°C
125°C
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5
-ID (A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-1.5V
-2.0V
-4.5V
-8V
-2.5V
-3.0V
VGS=-2.5V
ID=-5.5A, VGS=-4.5V
ID=-5A, VGS=-2.5V
ID=-4A, VGS=-1.8V
Rev 4.0: January 2019 www.aosmd.com Page 3 of 5
ALPHA&0MEGA YEMICONDI/CTOR / lPK=TA m 1m Rm 5‘ we Pulse
AO6409A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 2 4 6 8 10 12
-VGS (Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=-10V
ID=-5.5A
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID (Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10ms
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100ms
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJA=90°C/W
Ton
T
PD
100ms
TJ(Max)=150°C
TA=25°C
Rev 4.0: January 2019 www.aosmd.com Page 4 of 5
ALPHA & OMEGA SII‘MI (YIN/J (/(7 I (1 R
AO6409A
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Ig
Vgs -
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Rev 4.0: January 2019 www.aosmd.com Page 5 of 5