Datenblatt für 2SC3856 von Sanken Electric USA Inc.

79
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
200
180
6
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
100max
100max
180min
50min∗
2.0max
20typ
300typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=200V
VEB=6V
IC=50mA
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC3856
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
3
2
1
0 0.5 1.0 2.01.5
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=10A
5A
Collector Current IC(A)
0
15
10
5
021
Base-Emittor Voltage VBE(V)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
3 10 100 200
0.1
1
0.5
10
40
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
10ms
3ms
100ms
Without Heatsink
Natural Cooling
0.02 0.1 1 100.5 5 15
20
50
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Typ
0
0
5
15
10
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
700mA
300mA
500mA
200mA
100mA
50mA
I
B
=20mA
1A
(VCE=4V)
0.02 0.5 51
20
50
200
100
0.1 10 15
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
10
20
30
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
40
RL
(Ω)
4
IC
(A)
10
VBB2
(V)
–5
IB2
(A)
–1
ton
(
µ
s)
0.5typ
tstg
(
µ
s)
1.8typ
tf
(
µ
s)
0.6typ
IB1
(A)
1
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Part No.
b. Lot No.
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)