Toshiba's Next-Gen Trench-Gate MOSFETs Increase Efficiency and Power Density

Real-world performance and datasheet specifications don't always match when selecting a MOSFET to power applications with greater efficiency, a more compact design, and reliable switching characteristics. A MOSFET may seem to meet design calculations, but underperform once the design is complete due to factors such as switching losses, diode recovery behavior, and thermal constraints.

Picking the right MOSFET can mean the difference between a product that runs cool and efficiently and one that overheats or wastes energy. Important metrics that figure into successful applications include:

• On-state resistance (R_DS(on)) refers to the resistance the MOSFET presents when it is fully switched on. Lower R_DS(on) means less energy is wasted as heat, which directly impacts how efficiently a device can conduct current.
• Total gate charge (Q_g) defines how much electrical charge is required to turn the MOSFET on and off. Lower Q_g enables faster and more energy-efficient switching, reducing the load on the gate drive circuit.
• Reverse recovery charge (Q_rr) accounts for how much charge is released when the MOSFET’s internal diode switches from conducting to non-conducting. Lower Q_rr helps suppress voltage spikes during high-speed switching, leading to quieter, more reliable operation.
• Body-diode recovery determines how efficiently the MOSFET’s built-in diode can stop conducting and reset for the next cycle. Quick, clean recovery reduces electrical noise and heat.

Efficiency requirements are increasing at a pace that outstrips the capabilities of many existing power stages. Higher efficiency and increased power density in applications such as switched-mode power supplies (SMPS), industrial automation, data-center infrastructure, and automotive electronics are brushing up against the limitations of conventional MOSFET technologies.

Advantages of trench-gate MOSFETs

Toshiba’s U-MOS11-H MOSFETs address the challenges of providing significantly lower R_DS(on), minimized gate charge, and improved diode recovery characteristics with a trench-gate design.

For decades, MOSFETs were built using a horizontal layout, and improving performance generally required selecting a larger component. Trench-gate MOSFETs use a vertical “trench” in the silicon to form the gate electrode, rather than a flat surface. With this technology, current flows vertically through the silicon rather than laterally across it. The gate surrounds the channel more effectively, reducing the amount of silicon needed to carry current and lowering R_DS(on) for a given die size.

Trench-gate MOSFETs substantially reduce Q_rr to suppress large voltage spikes that can occur during high-speed switching, making them ideal for high-efficiency power supplies, DC-DC converters, and automotive or industrial power stages.

The new U-MOS11-H TPH2R70AR5,LQ (Figure 1) is an N-channel MOSFET rated for 100 V with an ultra-low R_DS(on) of just 2.7 mΩ (10 V_GS). This is around an 8% lower R_DS(on) compared with the prior-generation U-MOSX-H family, resulting in less heat and higher conduction efficiency under heavy loads.

Figure 1: Toshiba's TPH2R70AR5,LQ is a next-generation trench-gate MOSFET with lower RDS(on), minimized gate charge, and improved diode recovery characteristics. (Image source: Toshiba)

The Q_rr of the new generation is around 38% lower than comparable earlier-generation devices, reducing voltage spikes and EMI during switching. The total gate charge drops by roughly 37%, allowing faster and cleaner switching with less energy drawn from the gate driver.

Furthermore, this MOSFET improves on other key metrics important for efficient power designs. R_DS(on) × Q_g combines on-resistance and gate charge to show the overall trade-off between conduction and switching losses. R_DS(on) × Q_rr does the same for the MOSFET’s body diode, reflecting how much stress, heat, and voltage spike occur during diode recovery. On both counts, U-MOS11-H improves by more than 40% over the previous generation, giving engineers more thermal headroom and cleaner operation without increasing the package footprint.

Enabling smaller, lighter designs

As demand increases for compact, efficient DC/DC converters and SMPS in applications like servers and 5G infrastructure, MOSFETs such as U-MOS-11-H are essential to enabling smaller, lighter designs with high power density. Lower conduction and switching losses improve energy efficiency, reduce cooling requirements, and can lower overall system costs and design complexity.

U-MOS-11H serves as a dependable and well-documented MOSFET building block for standard power projects, offering ease of use without complicated gate drivers or special requirements. It strikes an effective balance among efficiency, reliability, and straightforward implementation.

For advanced applications, these updated Toshiba MOSFETs provide opportunities to push boundaries in power density and thermal efficiency, supporting designs such as compact SMPS, high-density server or workstation supplies, and efficient battery or motor-powered systems—all within a well-established silicon MOSFET framework.

From a strategic perspective, U-MOS11-H combines the proven strengths of trusted silicon MOSFET technology with the latest efficiency and switching improvements to provide engineers with a high-performance solution, making it a compelling choice alongside the most advanced power-stage solutions.

Conclusion

By leveraging the mature, cost-effective advantages of silicon MOSFETs such as reliability, wide availability, and predictable performance with the latest performance enhancements, Toshiba’s U-MOS11-H MOSFETs empower designers to create smaller, more efficient, and more reliable power electronics for today’s demanding applications.