Name: IMW65R075M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW65R075M2HXKSA1-ND
Price: 7.308 EUR
Availability: InStock

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IMW65R075M2HXKSA1
DigiKey Part Number	448-IMW65R075M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW65R075M2HXKSA1
Description	IMW65R075M2HXKSA1
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 26.6A (Tc) 111W (Tc) Through Hole PG-TO247-3-40
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 68mOhm @ 11.9A, 20V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.6V @ 2.4mA
Series CoolSiC™ G2	Gate Charge (Qg) (Max) @ Vgs 14.9 nC @ 18 V
Packaging Tube	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 516 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 111W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 26.6A (Tc)	Supplier Device Package PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Package / Case TO-247-3