Name: IMW65R050M2HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW65R050M2HXKSA1-ND
Price: 9.024 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMW65R050M2HXKSA1
DigiKey Part Number	448-IMW65R050M2HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW65R050M2HXKSA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 38A (Tc) 153W (Tc) Through Hole PG-TO247-3-40
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.6V @ 3.7mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 22 nC @ 18 V
Series CoolSiC™ Gen 2	Vgs (Max) +23V, -7V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 400 V
Part Status Active	Power Dissipation (Max) 153W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO247-3-40
Current - Continuous Drain (Id) @ 25°C 38A (Tc)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Base Product Number IMW65R050
Rds On (Max) @ Id, Vgs 46mOhm @ 18.2A, 20V