650 V IGBT High-Speed Series

PANJIT’s 650 V IGBT high-speed series, co-packed with fast- and soft-recovery anti-parallel diodes, is committed to pursuing the highest standards in terms of performance and quality. They are designed with the latest field-stop trench gate technology to achieve high efficiency, low loss, and energy savings. This series features superior high-speed switching and a maximum junction temperature of +175°C, as well as a low saturation voltage of 1.65 V at T_VJ +25°C. Available in a TO-247-3L through-hole package, it is an excellent fit to use in applications such as UPS systems, industrial motors, EV chargers, PV inverters, welding machines, and home appliances.

Features

• V_CE(sat) – switching loss trade-off improvement
• IGBT high-speed series shows a superior position in E_ON (turn-on energy) and E_OFF (turn-off energy)
• IGBT, FWD optimized for approximately fc = 20 kHz operation
• High junction temperature: +175°C
• Ideal for three-level inverters, bridge inverters, and PFC circuits