Nexperia

BSH205G2 20 V, P-Channel Trench MOSFET

Nexperia's 20 V, P-channel trench MOSFETs feature an enhanced-power dissipation capability of 890 mW

Image of NXP Semiconductor's BSH205G2 P-Channel Trench MOSFETNexperia offers their P-channel, enhancement mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.

Benefits
  • Low threshold voltage
  • Enhanced power dissipation capability of 890 mW
  • Low on-state resistance
  • Trench MOSFET technology
Applications    
  • Relay drivers
  • High-speed line drivers
  
  • High-side load switches
  • Switching circuits

20 V P-Channel Trench MOSFET

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CAvailable QuantityPrice
MOSFET P-CH 20V 2A TO236ABBSH205G2RMOSFET P-CH 20V 2A TO236AB20 V2A (Ta)0 - ImmediateSee Page for PricingView Details
Updated: 2017-08-08
Published: 2015-09-24

Related Product Highlight

60 V, Dual, N-Channel Trench MOSFET Nexperia's dual, N-channel, enhancement-mode FET in a lead-free, ultra-small, DFN1010B-6 (SOT1216), SMD, plastic package using trench MOSFET technology.
Terms & Conditions Privacy Notice Cookie Settings
Copyright © 1995-2026, DigiKey. All Rights Reserved.
ECIA Member
This site is protected by VikingCloud's Trusted Commerce program
ECIA Member