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60 V, Dual, N-Channel Trench MOSFET
Nexperia's 60 V, dual, N-channel trench MOSFETs feature electrostatic-discharge (ESD) protection over 2 kV HBM
Nexperia's NX7002BKXBZ is a dual, N-channel, enhancement-mode field-effect transistor (FET) in a lead-free, ultra-small, DFN1010B-6 (SOT1216), surface-mounted device (SMD), plastic package using trench MOSFET technology.
Benefits
- Logic-level compatible
- Lead-free, ultra-small, and ultra-thin SMD plastic package (1.1 mm x 1.0 mm x 0.37 mm)
- Trench MOSFET technology
- Electrostatic-discharge (ESD) protection over 2 kV HBM
Applications
- Relay drivers
- High-speed line drivers
- Low-side load switches
- Switching circuits
60 V Dual N-Channel Trench MOSFET
| Image | Manufacturer Part Number | Description | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Available Quantity | Price | ||
|---|---|---|---|---|---|---|---|---|
 |  | BSH205G2R | MOSFET P-CH 20V 2A TO236AB | 20 V | 2A (Ta) | 0 - Immediate | See Page for Pricing | View Details |
Published: 2015-09-24
