Name: SISS30LDN-T1-GE3
Brand: Vishay Siliconix
SKU: SISS30LDN-T1-GE3TR-ND
Price: 2.1 EUR
Availability: InStock

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SISS30LDN-T1-GE3
DigiKey Part Number	SISS30LDN-T1-GE3TR-ND - Tape & Reel (TR) SISS30LDN-T1-GE3CT-ND - Cut Tape (CT) SISS30LDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISS30LDN-T1-GE3
Description	MOSFET N-CH 80V 16A/55.5A PPAK
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 16A (Ta), 55.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet	Datasheet
EDA/CAD Models	SISS30LDN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 40 V
Part Status Active	Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 80 V	Supplier Device Package PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 55.5A (Tc)	Package / Case PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISS30
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V

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In-Stock: 5.823

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All prices are in EUR

Cut Tape (CT) & Digi-Reel®

* All Digi-Reel orders will add a €5.50 reeling fee.

Tape & Reel (TR)

Manufacturers Standard Package

Unit Price without VAT:	€1.75000
Unit Price with VAT:	€2.10000

SISS30LDN-T1-GE3