N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC
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N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC
SIDR668DP-T1-GE3

SISH892BDN-T1-GE3

DigiKey Part Number
742-SISH892BDN-T1-GE3TR-ND - Tape & Reel (TR)
742-SISH892BDN-T1-GE3CT-ND - Cut Tape (CT)
742-SISH892BDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SISH892BDN-T1-GE3
Description
N-CHANNEL 100 V (D-S) MOSFET POW
Manufacturer Standard Lead Time
29 Weeks
Customer Reference
Detailed Description
N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC
Datasheet
 Datasheet
EDA/CAD Models
SISH892BDN-T1-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
30.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.4W (Ta), 29W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
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In-Stock: 7.098
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Quantity
All prices are in EUR
Cut Tape (CT) & Digi-Reel®
QuantityUnit PriceExt Price
1€1.10000€1.10
10€0.69100€6.91
100€0.45620€45.62
500€0.35522€177.61
1.000€0.32269€322.69
* All Digi-Reel orders will add a €5.50 reeling fee.
Tape & Reel (TR)
QuantityUnit PriceExt Price
3.000€0.28137€844.11
6.000€0.26057€1,563.42
9.000€0.24998€2,249.82
15.000€0.24270€3,640.50
Manufacturers Standard Package
Unit Price without VAT:€1.10000
Unit Price with VAT:€1.32000