Name: SISH410DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISH410DN-T1-GE3TR-ND
Price: 1.752 EUR
Availability: InStock

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SISH410DN-T1-GE3
DigiKey Part Number	SISH410DN-T1-GE3TR-ND - Tape & Reel (TR) SISH410DN-T1-GE3CT-ND - Cut Tape (CT) SISH410DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISH410DN-T1-GE3
Description	MOSFET N-CH 20V 22A/35A PPAK
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 22A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet	Datasheet
EDA/CAD Models	SISH410DN-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Series TrenchFET®	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
Part Status Active	Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package PowerPAK® 1212-8SH
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 35A (Tc)	Package / Case PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISH410
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V