Name: SIHG23N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG23N60E-GE3-ND
Price: 5.736 EUR
Availability: OutOfStock

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SIHG23N60E-GE3
cms-digikey-product-number	SIHG23N60E-GE3-ND
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SIHG23N60E-GE3
cms-description	MOSFET N-CH 600V 23A TO247AC
cms-standard-lead-time	25 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 600 V 23A (Tc) 227W (Tc) Through Hole TO-247AC
Datasheet	Datasheet

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2418 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Base Product Number	SIHG23

Unit Price without VAT:	€4.78000
Unit Price with VAT:	€5.73600

SIHG23N60E-GE3