Name: TK7J90E,S1E
Brand: Toshiba Semiconductor and Storage
SKU: TK7J90ES1E-ND
Price: 4.368 EUR
Availability: InStock

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TK7J90E,S1E
DigiKey Part Number	TK7J90ES1E-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK7J90E,S1E
Description	MOSFET N-CH 900V 7A TO3P
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 900 V 7A (Ta) 200W (Tc) Through Hole TO-3P(N)
Datasheet	Datasheet
EDA/CAD Models	TK7J90E,S1E Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 700µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Series π-MOSVIII	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Part Status Active	Power Dissipation (Max) 200W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 900 V	Supplier Device Package TO-3P(N)
Current - Continuous Drain (Id) @ 25°C 7A (Ta)	Package / Case TO-3P-3, SC-65-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK7J90
Rds On (Max) @ Id, Vgs 2Ohm @ 3.5A, 10V

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Tube

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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.

Unit Price without VAT:	€3.64000
Unit Price with VAT:	€4.36800

TK7J90E,S1E