N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
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TK39J60W,S1VQ

DigiKey Part Number
TK39J60WS1VQ-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK39J60W,S1VQ
Description
MOSFET N-CH 600V 38.8A TO3P
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
Datasheet
 Datasheet
EDA/CAD Models
TK39J60W,S1VQ Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK39J60
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In-Stock: 6
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
1€9.41000€9.41
25€5.75840€143.96
100€4.88870€488.87
500€4.63160€2,315.80
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:€9.41000
Unit Price with VAT:€11.29200