2SA1869-Y(Q,M) is Obsolete and no longer manufactured.
Available Substitutes:

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Toshiba Semiconductor and Storage
In Stock: 7.669
Unit Price: €1.08000
Datasheet
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS
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2SA1869-Y(Q,M)

DigiKey Part Number
2SA1869-Y(QM)-ND
Manufacturer
Manufacturer Product Number
2SA1869-Y(Q,M)
Description
TRANS PNP 50V 3A TO-220NIS
Customer Reference
Detailed Description
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS
Datasheet
 Datasheet
Product Attributes
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Category
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Mfr
Power - Max
10 W
Packaging
Bulk
Frequency - Transition
100MHz
Part Status
Obsolete
Operating Temperature
150°C (TJ)
Transistor Type
Mounting Type
Through Hole
Current - Collector (Ic) (Max)
3 A
Package / Case
TO-220-3 Full Pack
Voltage - Collector Emitter Breakdown (Max)
50 V
Supplier Device Package
TO-220NIS
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Base Product Number
Current - Collector Cutoff (Max)
1µA (ICBO)
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (1)
Part NumberManufacturerQuantity AvailableDigiKey Part NumberUnit PriceSubstitute Type
2SA2097(TE16L1,NQ)Toshiba Semiconductor and Storage7.669264-2SA2097(TE16L1,NQ)CT-ND€1.08000Similar
Obsolete
This product is no longer manufactured. View Substitutes
Non-Cancelable/Non-Returnable