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TPD3215M | |
|---|---|
DigiKey Part Number | TPD3215M-ND |
Manufacturer | |
Manufacturer Product Number | TPD3215M |
Description | MOSFET 2N-CH 600V 70A MODULE |
Customer Reference | |
Detailed Description | Mosfet Array 600V 70A (Tc) 470W Through Hole Module |
Datasheet | Datasheet |
Product Attributes
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Category | Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V |
Manufacturer Renesas Electronics Corporation | Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V |
Packaging Bulk | Power - Max 470W |
Part Status Obsolete | Operating Temperature -40°C ~ 150°C (TJ) |
Technology GaNFET (Gallium Nitride) | Mounting Type Through Hole |
Configuration 2 N-Channel (Half Bridge) | Package / Case Module |
Drain to Source Voltage (Vdss) 600V | Supplier Device Package Module |
Current - Continuous Drain (Id) @ 25°C 70A (Tc) | Base Product Number |
Rds On (Max) @ Id, Vgs 34mOhm @ 30A, 8V |
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