Name: NTH4L013N120M3S
Brand: onsemi
SKU: 5556-NTH4L013N120M3S-ND
Price: 35.544 EUR
Availability: InStock

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NTH4L013N120M3S
DigiKey Part Number	5556-NTH4L013N120M3S-ND
Manufacturer	onsemi
Manufacturer Product Number	NTH4L013N120M3S
Description	DISCRETE SIC M3S 1200V 13MOHM
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 151A (Tc) 682W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.4V @ 37mA
Mfr onsemi	Gate Charge (Qg) (Max) @ Vgs 254 nC @ 18 V
Packaging Tube	Vgs (Max) +22V, -10V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 5813 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 682W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 151A (Tc)	Supplier Device Package TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 20mOhm @ 75A, 18V