


FDP039N08B-F102 | |
|---|---|
DigiKey Part Number | FDP039N08B-F102-ND |
Manufacturer | |
Manufacturer Product Number | FDP039N08B-F102 |
Description | MOSFET N-CH 80V 120A TO220-3 |
Manufacturer Standard Lead Time | 26 Weeks |
Customer Reference | |
Detailed Description | N-Channel 80 V 120A (Tc) 214W (Tc) Through Hole TO-220-3 |
Datasheet | Datasheet |
EDA/CAD Models | FDP039N08B-F102 Models |
Category | Vgs(th) (Max) @ Id 4.5V @ 250µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V |
Series | Vgs (Max) ±20V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 9450 pF @ 40 V |
Part Status Active | Power Dissipation (Max) 214W (Tc) |
FET Type | Operating Temperature -55°C ~ 175°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 80 V | Supplier Device Package TO-220-3 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 3.9mOhm @ 100A, 10V |
| Part Number | Manufacturer | Quantity Available | DigiKey Part Number | Unit Price | Substitute Type |
|---|---|---|---|---|---|
| TK65E10N1,S1X | Toshiba Semiconductor and Storage | 236 | TK65E10N1S1X-ND | €3.86000 | Similar |
| FDP039N08B-F102 | Rochester Electronics, LLC | 399 | 2156-FDP039N08B-F102ND-ND | €4.59800 | Parametric Equivalent |
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1 | €7.80000 | €7.80 |
| 10 | €5.34700 | €53.47 |
| 100 | €3.95650 | €395.65 |
| 800 | €3.49585 | €2,796.68 |
| Unit Price without VAT: | €7.80000 |
|---|---|
| Unit Price with VAT: | €9.36000 |

