Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
TO-92-3

PDTC124XS,126

DigiKey Part Number
PDTC124XS,126-ND - Tape & Box (TB)
Manufacturer
Manufacturer Product Number
PDTC124XS,126
Description
TRANS PREBIAS NPN 50V TO92-3
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
Datasheet
 Datasheet
Product Attributes
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Category
Resistor - Emitter Base (R2)
47 kOhms
Manufacturer
NXP USA Inc.
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V
Packaging
Tape & Box (TB)
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Part Status
Obsolete
Current - Collector Cutoff (Max)
1µA
Transistor Type
NPN - Pre-Biased
Power - Max
500 mW
Current - Collector (Ic) (Max)
100 mA
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Resistors Included
R1 and R2
Supplier Device Package
TO-92-3
Resistor - Base (R1)
22 kOhms
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Obsolete
This product is no longer manufactured.