Name: ISZ113N10NM5LF2ATMA1
Brand: Infineon Technologies
SKU: 448-ISZ113N10NM5LF2ATMA1TR-ND
Price: 3 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

ISZ113N10NM5LF2ATMA1
DigiKey Part Number	448-ISZ113N10NM5LF2ATMA1TR-ND - Tape & Reel (TR) 448-ISZ113N10NM5LF2ATMA1CT-ND - Cut Tape (CT) 448-ISZ113N10NM5LF2ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	ISZ113N10NM5LF2ATMA1
Description	ISZ113N10NM5LF2ATMA1 MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 10A (Ta), 63A (Tc) 2.5W (Ta), 100W (Tc) Surface Mount PG-TSDSON-8 FL
Datasheet	Datasheet
EDA/CAD Models	ISZ113N10NM5LF2ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 5
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.9V @ 36µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8 FL
Package / Case	8-PowerTDFN