Name: IPW60R099P6XKSA1
Brand: Infineon Technologies
SKU: IPW60R099P6XKSA1-ND
Price: 5.964 EUR
Availability: InStock

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IPW60R099P6XKSA1
DigiKey Part Number	IPW60R099P6XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPW60R099P6XKSA1
Description	MOSFET N-CH 600V 37.9A TO247-3
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO247-3
Datasheet	Datasheet
EDA/CAD Models	IPW60R099P6XKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.5V @ 1.21mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Series CoolMOS™ P6	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3330 pF @ 100 V
Part Status Active	Power Dissipation (Max) 278W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package PG-TO247-3
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)	Package / Case TO-247-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPW60R099
Rds On (Max) @ Id, Vgs 99mOhm @ 14.5A, 10V